SCTW100N65G2AG Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mΩ (typ., TJ=150 °C), in an HiP247™ package Datasheet - preliminary data Features Designed for automotive applications Tight variation of on-resistance vs. temperature Very fast and robust intrinsic body diode Very high operating temperature capability (TJ = 200 °C) Low capacitance 3 2 Applications 1 HiP247 Figure 1: Internal schematic diagram Traction for inverters DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature. Table 1: Device summary Order code Marking Package Packaging SCTW100N65G2AG SCT100N65G2AG HiP247™ Tube The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 5: "Package information". May 2016 DocID029319 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 www.st.com Contents SCTW100N65G2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 3 Package information ....................................................................... 6 3.1 4 2/9 HiP247™ package information.......................................................... 6 Revision history .............................................................................. 8 DocID029319 Rev 1 SCTW100N65G2AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 650 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operating values) -5 to 20 V Drain current (continuous) at TC = 25 °C 100 Drain current (continuous) at TC = 100 °C 85 IDM(1) Drain current (pulsed) 200 A PTOT Total dissipation at TC = 25 °C 390 W Tstg Storage temperature range ID Tj Operating junction temperature range -55 to 200 A °C °C Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID029319 Rev 1 Value Unit 0.45 °C/W 50 °C/W 3/9 Electrical characteristics 2 SCTW100N65G2AG Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4: On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Typ. Max. 650 50 100 Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V 500 Gate threshold voltage VDS = VGS, ID = 1 mA IGSS Static drain-source on-resistance 1.9 Unit V VDS = 650 V, VGS = 0 V, TJ = 150 °C (1) Zero gate voltage drain current RDS(on) Min. VDS = 650 V, VGS = 0 V IDSS VGS(th) Test conditions 3.2 VGS = 20 V, ID = 50 A 20 VGS = 20 V, ID = 50 A, TJ = 150 °C 22 VGS = 20 V, ID = 50 A, TJ = 200 °C 23 µA nA V mΩ Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Ciss Parameter Test conditions Min. Typ. Max. Unit - 3600 - pF - 305 - pF - 78 - pF - 215 - nC - 32 - nC - 60 - nC - 1.5 - Ω Min. Typ. Max. Unit - 300 - µJ - 250 - µJ Input capacitance VDS = 400 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = 400 V, ID = 50 A, VGS = 0 to 20 V Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance f=1 MHz, ID = 0 A Table 6: Switching energy (inductive load) Symbol 4/9 Parameter Test conditions Eon Turn-on switching energy Eoff Turn-off switching energy VDD = 400 V, ID = 50 A RG= 2.2 Ω, VGS = -5 to 20 V DocID029319 Rev 1 SCTW100N65G2AG Electrical characteristics Table 7: Reverse diode characteristics Symbol Parameter Test conditions VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current IF = 30 A, VGS = 0 V ISD = 50 A, di/dt = 4000 A/µs VDD = 400 V, VGS = -5 V DocID029319 Rev 1 Min Typ. Max Unit - 3.5 - V - 28 - 795 - nC - 44 - A ns 5/9 Package information 3 SCTW100N65G2AG Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 3.1 HiP247™ package information Figure 2: HiP247™ package outline 6/9 DocID029319 Rev 1 SCTW100N65G2AG Package information Table 8: HiP247™ package mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID029319 Rev 1 3.65 5.50 5.50 5.70 7/9 Revision history 4 SCTW100N65G2AG Revision history Table 9: Document revision history 8/9 Date Revision 09-May-2016 1 DocID029319 Rev 1 Changes First release SCTW100N65G2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029319 Rev 1 9/9