WILLAS FM120-M+ SESD5Z5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Features board space. Theoptimize SESD5Z5C is designed to protect voltage • Low power loss, high efficiency. sensitive fromlow ESD and voltage transient voltage current capability, forward drop. • Highcomponents surge capability. • High events. Excellent clamping capability, low leakage, and • Guardring for overvoltage protection. fast response time, make these parts ideal for ESD switching. • Ultra high-speed planar chip, metal silicon junction. • Silicononepitaxial protection designs where board space is at a Lead-free parts meet environmental standards of • premium. z Small Body Outline Dimensions 0.146(3.7) z Low Body Height z Peak Power up to 200 Watts @ 8 x 20 _µs • MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" z z z z 0.071(1.8) 0.056(1.4) z Low Leakage current z Response Time is Typically < 1 ns z Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code 0.040(1.0) suffix “H” 0.024(0.6) Moisture Sensitivity Level 1 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Functional diagram For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) SOD-523 Typical Thermal Resistance (Note 2) Absolute Ratings (Tamb=25°C ) Typical Junction Capacitance (Note 1) StoragePTemperature RangePulse Peak PP TL RΘJA CJ op Rated DC Blocking Voltage NOTES: 16 60 18 80 35 42 50 60 RangeVF @T A=125℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 56 70 105 140 80 100 150 200 Value -55 to +150 Units - 65 to +175 IR 0.50 0.70 0.5 10 air discharge contact discharge Per Human Body Model Per Machine Model 2012-09 120 200 40 120 IEC61000-4-4 (EFT) ESD Voltage 115 150 200 W 260 °C -55 0.85 to +155 °C 0.9 -40 to +125 °C 150 °C ±15 ±8 kV 40 A 16 kV 400 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum junction temperature IEC61000-4-2 (ESD) 10 100 1.0 30 Maximum lead temperature for soldering during 10s CHARACTERISTICS Maximum Current at @T A=25℃ Range T Average Reverse Operating Temperature Tj 15 50 TSTG Power (tp = 8/20μs) TstgForward Voltage Storage Temperature Maximum at 1.0A DC 14 40 TJ Parameter -55 to +125 Symbol Operating Temperature Range 0.012(0.3) Typ. z Cellular phones • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , Portable devices • Terminals :Plated terminals, solderable per MIL-STD-750 Complies with the following standards Digital cameras Method 2026 IEC61000-4-2 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Power supplies Level 4 15 kV (air discharge) • Mounting Position : Any 8 kV(contact discharge) • Weight : Approximated 0.011 gram MIL STD 883E - Method 3015-7 Class 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 25 kV HBM (Human Body Model) Marking Code 0.130(3.3) Pulse Mechanical data Applications • Epoxy : UL94-V0 rated flame retardant SOD-123H General Description surface mounted application in order to • Low profile 0.92 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5Z5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Electrical Parameter SOD-123H • Low profile surface mounted application in order to optimize board space. efficiency. • Low power loss, high Parameter Symbol • High current capability, low forward voltage drop. Maximum Reverse Peak Pulse IPP• High surge capability. Current for overvoltage protection. • Guardring Ultra high-speed switching.@ IPP • VC Clamping Voltage • Silicon epitaxial planar chip, metal silicon junction. VRWM Working Reverse Voltage parts Peak meet environmental standards of • Lead-free MIL-STD-19500 /228 Maximum Reverse Leakage Current IR• RoHS product for packing code suffix "G" @ VRWM Halogen free product for packing code suffix "H" IT Test Current 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) VBR Voltage IT : UL94-V0 rated flame @ retardant • EpoxyBreakdown • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA • Mounting Position : Any VBR VF C IF • Weight : Approximated 0.011 gram VRWM IR IT Typ. Part Numbers Min. Typ. Max. Max. Typ. 0v bias MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V V V mA V µA V mA pF Ratings at 25℃ ambient temperature unless otherwise specified. SESD5Z5C 5.6 7.8 1 Single phase half wave, 60Hz, resistive of 6.7 inductive load. For capacitive load, derate current by 20% *Surge current waveform per Figure 1. 5.0 1 1.25 200 FM130-MH FM140-MH FM150-MH FM160-MH SYMBOL RATINGS 1. VBR is measured with a pulse test current IT at FM120-MH an ambient temperature of 25℃． Marking Code Maximum Recurrent Peak Reverse Voltage Typical Characteristics Maximum RMS Voltage VRRM 12 20 13 30 14 40 15 50 30 FM180-MH FM1100-MH FM1150-MH FM1200-MH 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: Fig1. Pulsereverse Waveform 1- Measured at 1 MHZ and applied voltage of 4.0 VDC. Fig2.Power Derating Curve 2- Thermal Resistance From Junction to Ambient 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD5Z5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Application Note SOD-123H • Low profile surface mounted application in order to optimize board space. Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming 0.012(0.3) Typ. • High current capability, low forward voltage drop. transient a low enough level such that damage to the protected semiconductor is prevented. capability. • Hightosurge for overvoltage protection. • Guardring Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) protection elements, connected between the signal lines to ground. As the transient rises above the • Silicon epitaxial planar chip, metal silicon junction. parts environmental standards of a low impedance path diverting the transient current to • Lead-free operating voltage ofmeet the device, the TVS becomes MIL-STD-19500 /228 ground. Theproduct SESD5Z5C is code the ideal board evel protection of ESD sensitive semiconductor components. for packing suffix "G" • RoHS Halogen free product for packing code suffixdesign "H" The tiny SOD-523 package allows flexibility in the design of high density boards where the Mechanical space saving is at a data premium. This enables to shorten the routing and contributes to hardening against 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant ESD. • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 SOD-523 Mechanical Data Method 2026 .014(0.35) .009(0.25) Dimensions in inches and (millimeters) .035(0.90) .028(0.70) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .051(1.30) .043(1.10) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 150 200 V Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .008(0.20) .002(0.05) Maximum Recurrent Peak Reverse Voltage .028(0.70) 80 100 1.0 .020(0.50) A 30 40 120 -55 to +125 A ℃ -55 to +150 - 65 to +175 TSTG .067(1.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 0.50 0.70 0.85 .059(1.50) V CHARACTERISTICS F Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.5 IR Dimensions in inches and (millimeters) 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Marking 2- Thermal Resistance From Junction to Ambient Type number SESD5Z5C 2012-09 2012-06 Marking code 5C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESD5Z5C Transient Voltage Suppressors for ESD Protection Ordering Information: Device PN SESD5Z5C ‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09 WILLAS ELECTRONIC CORP.