WILLAS FM120-M+ SESD9D5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Features board space. Theoptimize SESD9D5C is designed to protect voltage • Low power loss, high efficiency. sensitive fromlow ESD andvoltage transient voltage current capability, forward drop. • Highcomponents surge capability. • High events. Excellent clamping capability, low leakage, and • Guardring for overvoltage protection. fast response time, make these parts ideal for ESD • Ultra high-speed switching. protection designs where board space is at a epitaxial planar chip, metal silicon junction. • Siliconon Lead-free parts meet environmental standards of • premium. Because of its small size, it is suited for use z Small Body Outline Dimensions z Low Body Height z Peak Power up to 150 Watts @ 8 x 20 μs Pulse z Low Leakage current z Response Time is Typically < 1 ns z Pb-Free package is available RoHS product for packing code suffix ”G” MIL-STD-19500 /228 in cellular players, digital product forMP3 packing code suffix "G" cameras and • RoHS phones, Halogen free product for packing code suffix "H" space is many other portable applications where board z Portable • Polarity :devices Indicated by cathode band Position : Any • Mounting Digital cameras • Weightsupplies : Approximated 0.011 gram Power z z 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) Complies with 0.031(0.8) Typ. the following standards 0.031(0.8) Typ. IEC61000-4-2 Level 4 15 kV (air discharge) Dimensions in inches and (millimeters) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Functional diagram Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM SOD-923 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Absolute Ratings (Tamb=25°C ) Typical Thermal Resistance (Note 2) Symbol PPPTemperature Peak Pulse Operating Range Parameter Power (tp = 8/20μs) TJ Storage Temperature Range RΘJA CJ Typical Junction Capacitance (Note 1) 1.0 30 -55 to +125 TL Maximum lead temperature for soldering during 10s Tstg Storage Temperature CHARACTERISTICS op VF Range IR Maximum junction temperature Rated DC Blocking Voltage NOTES: @T A=125℃ IEC61000-4-2 (ESD) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. - 65 to +175 0.50 0.70 0.5 10 air discharge contact discharge IEC61000-4-4 (EFT) 2- Thermal Resistance From Junction to Ambient 2012-09 ESD Voltage Per Human Body Model Per Machine Model 2012-06 Value ℃ Units -55 to +150 150 W 260 °C Range -55 toFM1100-MH +155 FM1150-MH °C FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH Maximum Average Reverse Current at @T A=25℃ Tj 40 120 TSTG Maximum at 1.0A Temperature DC T Forward Voltage Operating 0.012(0.3) Typ. Halogen free product for packing code suffix “H” Mechanical data at a premium. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , Applications • Terminals :Plated terminals, solderable per MIL-STD-750 z Cellular phones Method 2026 SOD-123H General Description surface mounted application in order to • Low profile -400.85 to +125 0.9 °C 150 °C ±15 ±8 kV 40 A 25 kV 400 V U 0.92 m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD9D5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile Electrical Parameter optimize board space. • Low power loss, high efficiency. low forward voltage drop. • High current capability,Parameter Symbol capability. • High surge Maximum Reverse Peak Pulse I•PPGuardring for overvoltage protection. Current • Ultra high-speed switching. V Clamping Voltage IPPsilicon junction. planar chip, @ metal • CSilicon epitaxial Lead-free parts meet environmental standards of • V Working Peak Reverse Voltage 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) RWM MIL-STD-19500 /228 Maximum Reverse Leakage Current for packing code suffix "G" •I RoHS product R Halogen@ freeVproduct for packing code suffix "H" RWM Mechanical data IT Test Current Epoxy : UL94-V0 rated flame retardant V•BR Breakdown Voltage @ IT • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Position : Any • Mounting Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA • Weight : Approximated 0.011 gram Part Numbers VBR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V I I Ratings at 25℃ ambient temperature unless otherwise specified. Min. Typ. Max. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SESD9D5C V V 5.6 6.7 RATINGS Marking Code V R RWM R C Typ. 0v bias mA V µA pF SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 7.8 1 13 30 14 40 5.0 15 50 16 60 18 80 1 10 100 115 150 11 120 200 V Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V *Surge waveform Maximumcurrent DC Blocking Voltage per Figure 1. VDC 20 30 40 50 60 80 100 150 200 V is measured a pulse VBR Average 1. Maximum Forwardwith Rectified Currenttest currentIOIT at an ambient temperature of 25℃． 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range A IFSM 30 40 120 -55 to +125 A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Fig1. Pulse Waveform 2012-09 2012-06 Fig2. Power Derating Curve WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESD9D5CTHRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER Pb Free Product SOD-123+ PACKAGE Package outline Features Application Note design, excellent power dissipation offers • Batch process better reverse leakage current and thermal resistance. SOD-123HTransient Voltage Electrostatic discharge (ESD) is a major cause of failure in electronic systems. • Low profile surface mounted application in order to optimize(TVS) board are space. Suppressors an ideal choice for ESD protection. They are capable of clamping the incoming transient 0.146(3.7) • Low power loss, high efficiency. to a low enough level such that damage to the protected semiconductor is prevented. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection capability. • High surge for overvoltage • Guardring elements, connected betweenprotection. the signal lines to ground. As the transient rises above the operating0.071(1.8) voltage of • Ultra high-speed switching. 0.056(1.4) the device, TVS becomes a metal low impedance path diverting the transient current to ground. The SESD9D5C epitaxial planar chip, silicon junction. • Siliconthe Lead-free parts meet environmental standards of semiconductor components. • is the ideal board evel protection of ESD sensitive MIL-STD-19500 /228 The tinyproduct SOD-923 package allows for packing code suffix "G" design flexibility in the design of high density boards where the space • RoHS Halogen free product for packing code suffix "H" saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Molded plastic, SOD-123H • Case :Mechanical SOD-923 Data , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. .006(0.15) .010(0.25) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any .030(0.75) .033(0.85) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 IO Maximum Average Forward Rectified Current .017(0.43) Peak Forward Surge Current 8.3 ms single half sine-wave .013(0.34) superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range TSTG .003(0.07) .007(0.17) .022(0.55) .026(0.65) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 CHARACTERISTICS .037(0.95) Maximum Forward Voltage at 1.0A DC .041(1.05) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.85 0.5 IR Dimensions in inches and (millimeters) 0.70 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Marking Type number 6ESD'& 2012-09 2012-06 Marking code & WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.