SESD5Z5CL(SOD 523)

WILLAS
FM120-M+
SESD5Z5CL
THRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
General
Description
surface mounted application in order to
• Low profile
Features
optimize
board space.
The
SESD5Z5CL
is designed to protect voltage
• Low power loss, high efficiency.
sensitive
fromlow
ESD
andvoltage
transient
current capability,
forward
drop.voltage
• Highcomponents
surge capability.
• High
events.
Excellent
clamping capability, low leakage, and
• Guardring for overvoltage protection.
fast response time, make these parts ideal for ESD
• Ultra high-speed switching.
protection
designs
where
board
space
is at a
epitaxial
planar
chip, metal
silicon
junction.
• Siliconon
Lead-free
parts
meet
environmental
standards
of
•
premium.
z
Small Body Outline Dimensions
z
Low Body Height
z
Peak Power up to 200 Watts @ 8 x 20 _µs
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Pulse
0.071(1.8)
0.056(1.4)
z
Low Leakage current
z
Response Time is Typically < 1 ns
z
Pb-Free package is available
RoHS product for packing code suffix ”G”
Mechanical data
Halogen free product for packing code0.040(1.0)
suffix “H”
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
z Moisture Sensitivity Level 1
• Case : Molded plastic, SOD-123H
Applications
0.031(0.8) Typ.
0.031(0.8) Typ.
,
Terminals
:Plated terminals, solderable per MIL-STD-750
z •Cellular
phones
Complies with the following standards
z
z
z
Method 2026
Portable devices
• Polarity : Indicated by cathode band
Digital cameras
• Mounting Position : Any
Power supplies
• Weight : Approximated 0.011 gram
IEC61000-4-2
Level 4
Dimensions in inches and (millimeters)
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
25 kV HBM (Human Body Model)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Functional diagram
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Absolute
Ratings
Operating
Temperature
Range
SOD-523
(Tamb=25°C )
Storage
Temperature Range
Symbol
PPP
CJ
TJ
-55 to +125
@T A=125℃
IR
Top
Operating Temperature Range
Tj
Maximum junction temperature
(ESD)
2- Thermal Resistance IEC61000-4-2
From Junction to Ambient
-55 to +150
0.70
0.5
10
air discharge
contact discharge
Per Human Body Model
Per Machine Model
2012-09
2012-06
℃
IEC61000-4-4 (EFT)
ESD Voltage
- 65 to +175
temperature V
for
10s
F soldering during0.50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
A
Value
Units
200
W
260
0.85
°C
0.9
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum
Current
at @T A=25℃
T Average Reverse
Storage
Temperature
Range
stg
A
40
120
Peak Pulse Power (tp = 8/20μs)
Rated DC Blocking Voltage
NOTES:
RΘJA
TSTGParameter
CHARACTERISTICS
TLForward Voltage
Maximum
Maximum
at 1.0A lead
DC
1.0
30
-55 to +155
°C
-40 to +125
°C
150
°C
±15
±8
kV
40
A
16
kV
400
V
0.92
V
m
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESD5Z5CL
THRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
Electrical
Parameter
optimize board space.
• Low power loss, high efficiency.
low forward voltage drop.
• High current capability,Parameter
Symbol
• High surge capability.
Maximum
Reverse Peak Pulse
for overvoltage protection.
• Guardring
IPP
Current
• Ultra high-speed switching.
V•CSiliconClamping
Voltage
IPP silicon junction.
epitaxial planar
chip,@
metal
• Lead-free parts meet environmental standards of
VRWM
Working Peak Reverse Voltage
MIL-STD-19500 /228
for packing
code suffix
"G"
• RoHS product
Maximum
Reverse
Leakage
Current
IR Halogen free product for packing code suffix "H"
@ VRWM
data
IMechanical
Test Current
T
• Epoxy : UL94-V0 rated flame retardant
VBR
Breakdown Voltage @ IT
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Position : Any
• Mounting
Electrical
Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.VF = 0.9V at IF = 10mA
• Weight : Approximated 0.011 gram
VBR
VF
C
IF
VRWM
IR
IT
Typ.
Part Numbers
Min.
Typ.
Max.
Typ. 0v bias
MAXIMUM RATINGS
AND ELECTRICAL
CHARACTERISTICS Max.
Ratings at 25℃ ambient temperature
V unlessVotherwiseVspecified.mA
Single phase half wave, 60Hz, resistive of inductive load.
SESD5Z5CL
5.8
6.7
7.8
1
For capacitive load, derate current by 20%
*Surge current waveform per Figure 1.
RATINGS
1. VBR
is measured
Marking
Code
V
µA
V
mA
pF
5.0
1
1.25
200
6
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
with a pulse test current IT at an
of 25℃.
12ambient
13 temperature
14
15
16
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
IO
IFSM
Typical Characteristics
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Fig1. Pulse Waveform
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
Fig2.Power Derating Curve
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
-20V- 200V
FM120-M+
SESD5Z5CL
THRU
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
Application
Note
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
SOD-123H
Electrostatic
discharge (ESD) is a major cause of failure in electronic systems.
Transient Voltage
• Low profile surface mounted application in order to
Suppressors
are an ideal choice for ESD protection. They are capable of clamping the incoming
optimize (TVS)
board space.
0.146(3.7)
power loss, high efficiency.
• Low to
transient
a low enough level such that damage to the protected semiconductor is prevented.
0.130(3.3)
0.012(0.3) Typ.
• High current capability, low forward voltage drop.
Surface
mount
TVS
offers
the
best
choice
for
minimal
lead
inductance.
They
serve
as
parallel
• High surge capability.
for overvoltage
protection.
• Guardring
protection
elements,
connected
between the signal lines to ground. As the transient rises above the
0.071(1.8)
• Ultra high-speed switching.
0.056(1.4)
operating
voltage
of the device, the TVS becomes a low impedance path diverting the transient current
to
epitaxial planar chip, metal silicon junction.
• Silicon
ground.
The SESD5Z5CL
is the ideal standards
board evel
parts meet environmental
of protection of ESD sensitive semiconductor components.
• Lead-free
MIL-STD-19500 /228
tiny
SOD-523
package
allows
RoHS
product
for packing
code suffix
"G" design flexibility in the design of high density boards where the
•The
for packing This
code suffix
"H" to shorten the routing and contributes to hardening against
spaceHalogen
savingfree
is product
at a premium.
enables
data
.
ESDMechanical
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
SOD-523 Mechanical Data
,
• Terminals :Plated terminals, solderable per MIL-STD-750
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.051(1.30)
.043(1.10)
0.031(0.8) Typ.
.014(0.35)
.009(0.25)
0.031(0.8) Typ.
.035(0.90)
.028(0.70)
Method 2026
0.040(1.0)
0.024(0.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.008(0.20)
.002(0.05)
Maximum Recurrent Peak Reverse Voltage
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
18
80
10
100
.028(0.70)
56
70
60 .020(0.50)
80
100
115
150
120
200
V
105
140
V
150
200
V
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
.067(1.70) TSTG
.059(1.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
CHARACTERISTICS
- 65 to +175
Storage Temperature Range
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
0.5
Rated DC Blocking Voltage
10
Dimensions
inIR inches and (millimeters)
@T A=125℃
0.9
0.92
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
Marking
Type number
Marking code
SESD5Z5CL
5C
.
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
SESD5Z5CL
Transient Voltage Suppressors for ESD Protection
Ordering Information: Device PN SESD5Z5CL ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-09
WILLAS ELECTRONIC CORP.