WILLAS FM120-M+ THRU T MBR20150C FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIER PACKAGE RECTIFIERS -20V- 200V TO-220AB Pb Free Product SOD-123+ PACKAGE Package outline Features Features better reverse leakage current and thermal resistance. • Batch process design, excellent power dissipation offers TO-220AB Junction Temperature Capability profile surface mounted application in order to •• LowHigh x optimize Caseboard Material: Molded Plastic. UL Flammability space. power loss, high efficiency. •x LowPb-Free package is available • High current capability, low forward voltage drop. RoHS product for packing code suffix ”G” • High surge capability. Halogen productprotection. for packing code suffix “H” for free overvoltage • Guardring Classification Rating 94V-0 and MSL Rating 1 high-speed switching. • Ultra Lowepitaxial Leakage Current planar chip, metal silicon junction. ••Silicon x Marking : type environmental standards of • Lead-free parts meetnumber SOD-123H 0.146(3.7) 0.130(3.3) .380(9.65) 0.012(0.3) Typ. .420(10.67) .560(14.22) .625(15.88) 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Maximum Ratings code suffix "G" • RoHS product for packing .250(6.35) .500(12.70) .580(14.73) free product for packing code suffix :"H" • Halogen Operating J unction Temperature 150°C Mechanical data • Storage Temperature: - 5 0°C to +150°C 0.040(1.0) Per: d iode Thermal Resistance 0.024(0.6) UL94-V0 rated flame retardant2.2°C/W Junction to Case •• Epoxy •• Case Total Thermal Resistance 1.3°C/W Junction to Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. • Mounting Torgue: 5 in-lbs Maximum , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Maximum Maximum Method 2026 Catalog Recurrent RMS DC .050(1.14) Dimensions in inches and (millimeters) .060(1.52) • PolarityNumber : Indicated by cathode band Peak Reverse Voltage Blocking • Mounting Position : Any Voltage Voltage .190(2.29) MBR: Approximated 20150 CT 0.011 gram 150 V 105V 150 V • Weight .110(2.79) .190(4.83) .210(5.33) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .140(3.56) .190(4.82) .045(1.14) .055(1.39) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT MarkingElectrical Code 12 13Specified 14 Characteristics @ 25°C Unless Otherwise MaximumAverage Recurrent Peak Reverse Voltage IF(AV) Forward Maximum Current RMS Voltage Forward Surge MaximumPeak DC Blocking Voltage IFSM Current Maximum Average Forward Rectified Current Maximum Instantaneous Peak Forward Surge Current 8.3 ms single half sine-wave Forward superimposed on ratedVoltage load (JEDEC method) MBR20150CT VF Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) VF Operating Temperature Range Storage Temperature Range VRRM 20 A VRMS V180A DC 30 °C = 155 40 15 50 16 60 18 80 28 35 42 56 20 8.3ms, 30half 40 50 60 80 20T 14 C sine wave IO IFSM .92V R ΘJA CJ .75V TJ TSTG 21 IFM = 10A TJ = 25°C I FM-55 = 10A to +125 TJ = 125°C .230(5.84) .270(6.86) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 100 115 150 120 200 Volts 70 105 140 Volts 100 150 200 Volts 1.0 30 .050(1.27) 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ CHARACTERISTICS Maximum Reverse Current At Rated DC Blocking Voltage Rated DC Blocking Voltage NOTES: IR Maximum Average Reverse Current at @T A=25℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC @T A=125℃ 25 µA IR 5m A 0.50 TJ = 25°C TJ = 125°C 0.70 0.85 0.5 10 .012(0.30) .025(0.64) 0.9 0.92 Volts .080(2.04) .115(2.92) mAmps Dimensions in inches and (millimeters) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient * Pulse Test: Pulse Width380µsec, Duty Cycle 2% 2012-06 2012-12 WILLASELECTRONIC ELECTRONIC CORP. WILLAS CORP. WILLAS FM120-M+ THRU T MBR20150C FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPACKAGE RECTIFIERS -20V- 200V TO-220AB Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient better reverse leakage current and thermal resistance. SOD-123H average forward current (per diode). temperature (δ = 0.5, per diode). surface mounted application in order to • Low profile optimize board space. power loss, high efficiency. • Low PF(av)(W) • High current capability, low forward voltage drop. 10 δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 •9High surge capability. •8Guardring for overvoltage protection. •7Ultra high-speed switching. δ=1 •6Silicon epitaxial planar chip, metal silicon junction. •5Lead-free parts meet environmental standards of 4MIL-STD-19500 /228 •3RoHS product for packing code suffix "G" T 2Halogen free product for packing code suffix "H" 1 IF(av) (A) Mechanical data tp δ=tp/T 0 0 1 : UL94-V0 2 3 rated 4 5 flame 6 retardant 7 8 9 10 11 12 • Epoxy 0.146(3.7) 0.130(3.3) IF(av)(A) 0.012(0.3) Typ. 12 Rth(j-a)=Rth(j-c) 10 0.071(1.8) 0.056(1.4) 8 6 Rth(j-a)=15°C/W 4 T 2 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 0.040(1.0) 0.024(0.6) 175 • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. 0.031(0.8) Typ. Fig. 3: Non repetitive surge peak forward current ,Fig. 4: Relative variation of thermal impedance • Terminals :Plated terminals, solderable per MIL-STD-750 versus overload duration (maximum values, per junction to case versus pulse duration (per diode). Method 2026 diode). Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band IM(A) Zth(j-c)/Rth(j-c) • Mounting Position : Any 150 1.0 • Weight : Approximated 0.011 gram 125 0.8 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 100 Ratings at 25℃ ambient temperature unless otherwise specified. Tc=50°C Single 75 phase half wave, 60Hz, resistive of inductive load. Tc=75°C For capacitive load, derate current by 20% 50 IM RATINGS 25 t Marking Code t(s) δ=0.5 Maximum0Recurrent Peak Reverse Voltage 1E-3 1E-2 Maximum RMS Voltage 1E-1 VRRM VRMS 12 20 1E+0 14 VDC 20 versus IO reverse voltage applied (typical values, per diode). Fig. 5: Reverse leakage current Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating Temperature Range Tj=175°C TJ Storage Temperature Range Tj=150°C TSTG 1E+4 1E+2 Tj=100°C 1E+1 Maximum Average Reverse Current at @T A=25℃ 14 40 16 tp(s) 60 28 15 50 1E-2 35 30 40 50 60 18 10 115 tp δ=tp/T 80 100 150 1E-1 1E+0 56 70 105 42 80 100 150 120 200 Volts 140 Volts 200 Volts Fig. 6: Junction capacitance 1.0versus reverse voltage applied (typical values, per diode). Amps 1000 40 120 C(pF) -55 to +125 Amps ℃/W PF -55 to Tj=25°C +150 F=1MHz ℃ - 65 to +175 ℃ Rated DC Blocking Voltage 1E+0 @T A=125℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 100 0.50 VF 0.70 0.9 0.85 0.5 IR 0.92 Volts mAmps 10 Tj=25°C VR(V) VR(V) NOTES: 1E-1 25 applied50 75 1- Measured at 01 MHZ and reverse voltage of 100 4.0 VDC. 125 13 30 0.0 1E-3 21 Tj=125°C CHARACTERISTICS Maximum Forward Voltage at 1.0A DC T Single pulse 30 CJ Typical Junction 1E+5 Capacitance (Note 1) 1E+3 δ = 0.2 δ = 0.1 IFSM RΘJA Typical Thermal Resistance (Note 2) IR(µA) 0.4 Tc=125°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.2 Maximum DC Blocking Voltage δ = 0.5 0.6 150 10 1 2 5 10 20 50 100 200 2- Thermal Resistance From Junction to Ambient 2012-06 2012-12 WILLAS ELECTRONICCORP. CORP. WILLAS ELECTRONIC WILLAS FM120-M+ THRU T MBR20150C FM1200-M+ 20.0A SCHOTTKY BARRIER RECTIFIERS 150V 1.0A SURFACE MOUNT SCHOTTKY BARRIERPACKAGE RECTIFIERS -20V- 200V TO-220AB Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Fig. 7: Forward voltage drop versus forward Low power loss, high efficiency. • current (maximum values, per diode). • High current capability, low forward voltage drop. • High surge capability. • Guardring IFM(A)for overvoltage protection. Ultra high-speed switching. • 100.0 • Silicon epitaxial planar chip, metal silicon junction. Tj=125°C environmental standards of • Lead-free parts meet Typical values • Fig. 8: Thermal resistance junction 0.146(3.7)to ambient versus 0.130(3.3) copper surface under tab (Epoxy printed circuit0.012(0.3) board,Typ. copper thickness: 35µm) (STPS20150CG only). Rth(j-a) (°C/W) 70 MIL-STD-19500 /228 10.0 product for packing code suffix "G" RoHS Tj=125°C for packingTj=25°C Halogen free product code suffix "H" 60 50 40 Mechanical data 1.0 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H VFM(V) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.0 0.2 0.4 0.6 0.8 Method 2026 1.0 1.2 1.4 0.071(1.8) 0.056(1.4) 80 1.6 30 0.040(1.0) 0.024(0.6) 20 0.031(0.8) Typ. 10 0 1.8 0 2 4 6 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. S(cm²) 8 10 12 14 16 18 20 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-12 WILLASELECTRONIC ELECTRONICCORP. CORP. WILLAS