SiHG47N60S_RC

SiHG47N60S_RC
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R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/tank and Cauer/filter
configurations are included. When implemented in P-SPICE,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the P-SPICE simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in application note AN609,
“Thermal Simulation of Power MOSFETs on the P-SPICE
Platform”.
R-C THERMAL MODEL FOR TANK CONFIGURATION
T (Junction)
RT1
RT2
RT3
RT4
CT1
CT2
CT3
CT4
T (Ambient)
R-C VALUES FOR TANK CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
Foot
RT1
n/a
46.1657m
n/a
RT2
n/a
79.3411m
n/a
RT3
n/a
58.9292m
n/a
RT4
n/a
115.5640m
n/a
Junction to
Ambient
Case
Foot
CT1
n/a
995.3079m
n/a
CT2
n/a
573.2441m
n/a
CT3
n/a
93.9680m
n/a
CT4
n/a
5.2389m
n/a
THERMAL CAPACITANCE (Joules/°C)
Note
• n/a indicates not applicable
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Revision: 12-Sep-11
1
Document Number: 90739
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S_RC
www.vishay.com
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
T (Junction)
RF2
RF1
CF1
RF3
CF2
RF4
T (Ambient)
CF4
CF3
GND
R-C VALUES FOR FILTER CONFIGURATION
THERMAL RESISTANCE (°C/W)
Junction to
Ambient
Case
RF1
n/a
133.3755m
Foot
n/a
RF2
n/a
72.7442m
n/a
RF3
n/a
61.3480m
n/a
RF4
n/a
32.5323m
n/a
THERMAL CAPACITANCE (Joules/°C)
Junction to
Ambient
Case
Foot
CF1
n/a
4.9561m
n/a
CF2
n/a
88.2375m
n/a
CF3
n/a
344.7316m
n/a
CF4
n/a
122.0071m
n/a
Note
• n/a indicates not applicable
Revision: 12-Sep-11
2
Document Number: 90739
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S_RC
www.vishay.com
Revision: 12-Sep-11
Vishay Siliconix
3
Document Number: 90739
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000