SiHG47N60S Datasheet

SiHG47N60S
www.vishay.com
Vishay Siliconix
S Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Generation one
650
RDS(on) max. at 25 °C (Ω)
VGS = 10 V
• Low figure-of-merit Ron x Qg
0.07
Qg max. (nC)
216
• 100 % avalanche tested
Qgs (nC)
39
• Ultra low gate charge
Qgd (nC)
57
• Ultra low Ron
Configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
APPLICATIONS
TO-247AC
• PFC power supply stages
• Hard switching topologies
G
• Solar inverters
• UPS
S
D
• Motor control
S
G
• Server telecom
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG47N60S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
140
Avalanche Energy (repetitive)
EAR
0.42
Single Pulse Avalanche Energy b
EAS
1800
3.3
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
V
47
30
IDM
Linear Derating Factor
UNIT
A
W/°C
mJ
PD
417
W
TJ, Tstg
-55 to +150
°C
dV/dt
37
8.5
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 Ω, IAS = 7 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-0983-Rev. F, 27-Apr-15
Document Number: 91341
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
0.3
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.7
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward
Transconductance a
RDS(on)
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 600 V, VGS = 0 V, TJ = 150 °C
-
-
10
VGS = 10 V
-
0.057
0.07
Ω
S
ID = 24 A
gfs
VDS = 8 V, ID = 3 A
-
7.5
-
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
6630
-
-
220
-
-
7
-
-
180
216
-
39
-
μA
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
ID = 20 A, VDS = 400 V
Gate-Drain Charge
Qgd
-
57
-
Turn-On Delay Time
td(on)
-
30
60
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
pF
nC
VDD = 380 V, ID = 47 A,
Rg = 4.4 Ω, VGS = 13 V
-
12
25
-
115
175
-
9
20
f = 1 MHz, open drain
-
0.62
-
-
-
47
-
-
140
-
-
1.2
-
750
1125
ns
-
18
36
μC
-
39
80
A
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
IS
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Body Diode Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
A
S
TJ = 25 °C, IS = 47 A, VGS = 0 V
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
VR = 25 V
V
Note
a. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S15-0983-Rev. F, 27-Apr-15
Document Number: 91341
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
160
3
15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
BOTYTOM 5.0V
ID , Drain-to-Source Current (A)
120
100
80
RDS(on), Drain-to-Source On Resistance (Normalized)
TOP
140
TJ =25 °C
60
40
20
2,5
ID=47A
2
1,5
1
0,5
VGS=10V
5.0V
0
0
Įķı
ıġ
Ķġ
IJıġ
IJĶġ
Įĵı
Įijı
ı
ijı
ĵı
ķı
Ĺı
IJıı
IJijı
IJĵı
IJķı
ijıġ
TJ , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics (TO-247)
100 000
100
TOP
15V
14V
13V
12V
11V
10V
9.0V
8.0V
7.0V
6.0V
BOTYTOM 5.0V
60
TJ=150°C
10 000
C - Capacitance (pF)
ID , Drain-to-Source Current (A)
80
40
5.0V
20
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Coss
1000
100
10
Crss
0
1
ıġ
Ķġ
IJıġ
IJĶġ
ijıġ
0
100
V DS , Drain-to-Source Voltage (V)
300
400
500
600
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics (TO-247)
24
160
140
VGS, Gate to Source Voltage (V)
100
80
60
TJ=150°C
40
TJ=25°C
20
Ķġ
IJıġ
IJĶġ
ijıġ
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0983-Rev. F, 27-Apr-15
16
12
8
4
0
ıġ
VDS=480V
VDS=300V
VDS=120V
I D=47A
20
120
ID , Drain-to-Source Current (A)
200
VDS - Drain-to-Source Voltage (V)
ijĶġ
0
0
50
100
150
200
250
300
350
QG, Total gate charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91341
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S
www.vishay.com
Vishay Siliconix
IJııı
1000
ŊŅ ĭġŅųŢŪůĮŵŰĮŔŰŶųŤŦġńŶųųŦůŵġĩłĪ
ŐőņœłŕŊŐŏġŊŏġŕʼnŊŔġłœņł
ōŊŎŊŕņŅġŃŚġœ ŅŔĩŐŏĪ
ISD , Reverse Drain Current (A)
100
TJ=150°C
10
TJ=25°C
1
IJıı
IJı
100μŴŦŤ
IJġŮġŴŦŤ
IJ
IJıġŮġŴŦŤ
VGS=0V
ŕń ľġijĶġɗ
ŕŋ ľġIJĶıġɗ
ŔŪůŨŭŦġőŭŶŴŦ
0,1
ıĭij
ıĭĵ
ıĭķ
ıĭĹ
IJ
IJĭij
ıĭIJ
IJĭĵ
IJ
VSD , Source -to-Drain Voltage (V)
IJı
IJıı
IJııı
ŗŅŔ ĭġŅųŢŪůĮŵŰĮŔŰŶųŤŦġŗŰŭŵŢŨŦġĩŗĪ
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1
Thermal Response (ZthJC)
0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
0.01
10-4
10-3
10-2
0.1
1
t1, Rectangular Pulse Duration (s)
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-247AC)
VDS
VGS
RD
15 V
D.U.T.
RG
+
- VDD
L
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
D.U.T.
RG
IAS
Fig. 10 - Switching Time Test Circuit
20 V
VDS
tp
90 %
Driver
+
A
- VDD
A
0.01 Ω
Fig. 12 - Unclamped Inductive Test Circuit
10 %
VGS
t d(on)
tr
t d(off) t f
Fig. 11 - Switching Time Waveforms
S15-0983-Rev. F, 27-Apr-15
Document Number: 91341
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S
www.vishay.com
Vishay Siliconix
Current regulator
Same type as D.U.T.
V DS
50 kΩ
tp
12 V
0.2 µF
0.3 µF
D.U.T.
+
V
- DS
VGS
3 mA
I AS
IG
ID
Current sampling resistors
Fig. 13 - Unclamped Inductive Waveforms
Fig. 15 - Gate Charge Test Circuit
QG
VGS
QGS
QGD
VG
Charge
Fig. 14 - Basic Gate Charge Waveform
S15-0983-Rev. F, 27-Apr-15
Document Number: 91341
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG47N60S
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
Period
P.W.
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 16 - For N-Channel
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91341.
S15-0983-Rev. F, 27-Apr-15
Document Number: 91341
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000