WILLAS FM120-M SE3415 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss,MOSFET high efficiency. • Low P-Channel 20-V(D-S) • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. FEATURE • UltraRhigh-speed , lowswitching. gate charge,low gate voltages Excellent epitaxial planar chip, metal silicon junction. • SiliconDS(ON) • Lead-free parts meet environmental standards of MIL-STD-19500 /228 APPLICATIONS • RoHS product for packing code suffix "G" Load switch in PWM applicatopns Halogenand free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Pb-Free package is available • Case : Molded plastic, SOD-123H , RoHS product for packing code suffix ”G” • Terminals :Plated terminals, solderable per MIL-STD-750 Methodfor 2026 Halogen free product packing code suffix “H” 0.031(0.8) Typ. • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Dimensions in inches and (millimeters) D MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% MARKING: R15 RATINGS G SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 14 Maximum RMS Voltage VRMS noted) Maximum ratings (Ta=25℃ unless otherwise 20 Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current Drain-Source Voltage IO IFSM Gate-Source Voltage Typical Thermal Resistance (Note 2) RΘJA VGS CJ ID TJ PD Parameter Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Continuous Drain Current (Note (t≤10s) Typical Junction Capacitance 1) Operating Temperature Range (t≤10s) Maximum Power Dissipation Storage Temperature Range Thermal Resistance from Junction to Ambient Operating Junction Temperature CHARACTERISTICS TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 Symbol Value VDS -20 ±8 -4.0 -55 to +125 RθJA 0.35 357 1.0 30 40 120 Unit V A -55 to +150 W - 65 to +175 ℃/W TJ FM130-MH FM140-MH FM150-MH 150FM160-MH FM180-MH FM1100-MH ℃ FM1150-MH FM1200-M SYMBOL FM120-MH VF MaximumTemperature Forward Voltage at 1.0A DC Storage 14S 40 13 30 @T A=125℃ IR TSTG 0.50 0.70 -55 ~+150 0.85 0.5 ℃ 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3415 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Electrical characteristics (Ta=25℃ unless otherwise noted) for overvoltage protection. • Guardring • Ultra high-speed switching. epitaxial planar chip, metalSymbol silicon junction. Test Condition • Silicon Parameter • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Min Typ 0.012(0.3) Typ. Max 0.071(1.8) 0.056(1.4) Units Static Parameters MIL-STD-19500 /228 product forvoltage packing code suffixV"G" • RoHS Drain-source breakdown (BR) DSS VGS = 0V, ID =-250µA -20 VDS =VGS, ID =-250µA -0.3 V Halogen free product for packing code suffix "H" Gate threshold voltage Mechanical data VGS(th) -1 Method 2026 ±1 0.031(0.8) Typ. 0.050 Dimensions in inches and (millimeters) VGS =-2.5V, ID =-4A 0.060 VGS =-1.8V, ID =-2A 0.073 Forward transconductance(note2) gFS VDS =-5V, ID =-4A Body diode voltage(note2) VSD IS=-1A,VGS =0V Input capacitance Ciss MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Output capacitance Marking Code Reverse transfer capacitance Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Gate resistance S -1 1450 VDS =-10V,VGS =0V,f =1MHz Coss Crss VRRM 12 20 13 30 14 40 14 GS =0V,f 21 28 Rg VRMSVDS =0V,V =1MHz 20 VDC Switching Parameters 30 40 205 15 50 16 60 160 18 80 35 42 6.5 56 50 60 80 IO Maximum Average Forward Rectified Current Total gate charge superimposed on rated load (JEDEC method) Operating Temperature Range Turn-on rise time(note3) Storage Temperature Range Turn-off delay time(note3) CHARACTERISTICS Turn-off fall time(note3) Maximum Forward Voltage at 1.0A DC Qgd RΘJA td(on) CJ TJ tr tf -55 to +125 VDS=-10V, VGS=-4.5V 4.5 40 120 9.5 17 RGEN =3Ω, RL=2.5Ω, pF 115 150 120 200 70 Ω 105 140 100 150 200 nC -55 to +150 - 65 to +175 TSTG td(off) 10 100 1.0 17.2 30 1.3 Qg Peak Forward Surge Current 8.3 ms single half sine-wave Gate-Source charge Qgs IFSM VDS =-10V,VGS =-4.5V,ID =-4A Typical Junction Capacitance Turn-on delay time (note3) (Note 1) V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum DC Blocking Voltage Gate-drain charge Typical Thermal Resistance (Note 2) Ω 8 Ratings at 25℃ ambient temperature unless otherwise specified. Dynamic Parameters Single phase half wave,(note3) 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS µA 0.031(0.8) Typ. -1 VGS =-4.5V, ID =-4A • Polarity : Indicated by cathode band Drain-source on-state resistance(note1) RDS(on) • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ±10 VDS =0V, VGS =±8V • Epoxy : UL94-V0 rated flame retardant IGSS • Case : Molded plastic, SOD-123H VDS =0V, VGS =±4.5V , Terminals :Plated terminals, solderable Zero gate• voltage drain current IDSS per MIL-STD-750 VDS =-16V, VGS =0V Gate-body leakage current ns 94 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 35FM180-MH FM1100-MH FM1150-MH FM1200-M VF Notes: Maximum Average Reverse Current at @T A=25℃ IR 1. Rated Repetitive rating,pulse junction temperature. @Tby A=125℃ DC Blocking Voltage width limited 0.50 0.70 0.85 0.9 0.5 0.92 10 2.NOTES: Pulse Test : Pulse width≦300µs, duty cycle≦2%. 3.1-These parameters have noreverse way tovoltage verify. Measured at 1 MHZ and applied of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3415 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers 25 Output Characteristics better reverse leakage current and thermal resistance. optimize board space. -8.0V Ta=25℃ -3.0V Ta=25℃ Pulsed • Low power loss, high efficiency. V =-2.0V -4.5V 20 low forward voltage drop. • High current capability,-2.5V • High surge capability. • Guardring for overvoltage protection. 15 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Pulsed (A) 0.012(0.3) Typ. ID VGS=-1.5V MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 8 DRAIN CURRENT DRAIN CURRENT ID (A) GS 10 Transfer Characteristics SOD-123H 10 • Low profile surface mounted application in order to • RoHS product for packing code suffix "G" 6 0.071(1.8) 0.056(1.4) 4 Halogen free product for packing code suffix "H" Mechanical data 5 2 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0 , 0 1 2 3 4 5 • TerminalsDRAIN :Plated terminals, solderable per MIL-STD-750 TO SOURCE VOLTAGE V (V) 0 0.0 0.031(0.8) Typ. 0.5 • Polarity : Indicated by cathode band : Any • Mounting Position RDS(ON) —— ID 80 • Weight : Approximated 0.011 gram T =25℃ 0.031(0.8) Typ. 2.0 1.5 GATE TO SOURCE VOLTAGE DS Method 2026 1.0 VGS (V) Dimensions in inches and (millimeters) RDS(ON) 60 VGS —— Ta=25℃ a 60 RATINGS 50 Recurrent Peak Reverse Voltage Maximum VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 40 VGS=-4.5V Peak Forward Surge Current 8.3 ms single half sine-wave 30 2 4 5 6 superimposed on 3rated load (JEDEC method) Typical Thermal DRAIN CURRENT Resistance (Note 2) 7 ID 8 9 Storage Temperature Range 10 Ta=25℃ Pulsed IS CHARACTERISTICS (A) IS SOURCE CURRENT 18 80 30 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 1.0 30 0 2 4 6 GATE TO SOURCE VOLTAGE 40 120 -55 to +125 8 VGS 10 (V) -55 to +150 - 65 to +175 VF 0.50 0.70 0.85 0.9 0.5 IR @T A=125℃ 0.1 16 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage D 15 50 TSTG Maximum 1 Forward Voltage at 1.0A DC 40 TJ VSD 14 40 30 10 CJ —— 21 45 35 RΘJA (A) Typical Junction Capacitance (Note 1) Operating Temperature Range 13 30 IO IFSM Maximum Average Forward Rectified Current (mΩ) FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH I =-4A VGS=-2.5V Marking Code 50 RDS(ON) RDS(ON) (mΩ) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% ON-RESISTANCE VGS=-1.8V 70 Pulsed MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 55 ON-RESISTANCE Pulsed 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.01 2- Thermal Resistance From Junction to Ambient 1E-3 1E-4 1E-5 0.0 2012-06 2012-10 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD (V) 1.0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3415 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM .080(2.04) Maximum RMS Voltage .070(1.78) Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR .020(0.50) .012(0.30) 2- Thermal Resistance From Junction to Ambient NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 80 100 80 100 .003(0.08) 56 70 115 150 120 200 105 140 150 200 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage TSTG .004(0.10)MAX. .008(0.20) 18 10 1.0 30 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC Rev.D COR WILLAS ELECTRONIC CORP. SE3415 MOSFETS SOT-23 Plastic-Encapsulate Ordering Information: Device PN SE3415‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.