JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3415 P-Channel 20-V(D-S) MOSFET SOT-23 FEATURE Excellent RDS(ON), low gate charge,low gate voltages 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS Load switch and in PWM applicatopns D MARKING: R15 G S Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (t≤10s) ID -4.0 A Maximum Power Dissipation (t≤10s) PD 0.35 W RθJA 357 ℃/W TJ 150 ℃ TSTG -55 ~+150 ℃ Thermal Resistance from Junction to Ambient Operating Junction Temperature Storage Temperature V B,Apr,2011 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Static Parameters Drain-source breakdown voltage Gate threshold voltage V(BR) DSS VGS = 0V, ID =-250µA -20 VGS(th) VDS =VGS, ID =-250µA -0.3 Gate-body leakage current IGSS Zero gate voltage drain current IDSS Drain-source on-state resistance(note1) RDS(on) -1 VDS =0V, VGS =±8V ±10 VDS =0V, VGS =±4.5V ±1 VDS =-16V, VGS =0V -1 VGS =-4.5V, ID =-4A 0.050 VGS =-2.5V, ID =-4A 0.060 VGS =-1.8V, ID =-2A 0.073 Forward transconductance(note2) gFS VDS =-5V, ID =-4A Body diode voltage(note2) VSD IS=-1A,VGS =0V 8 V µA Ω S -1 V Dynamic Parameters (note3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 1450 VDS =-10V,VGS =0V,f =1MHz 205 pF 160 VDS =0V,VGS =0V,f =1MHz 6.5 Ω Switching Parameters Total gate charge Qg Gate-Source charge Qgs Gate-drain charge Qgd 4.5 Turn-on delay time (note3) td(on) 9.5 Turn-on rise time(note3) Turn-off delay time(note3) Turn-off fall time(note3) 17.2 VDS =-10V,VGS =-4.5V,ID =-4A 1.3 tr VDS=-10V, VGS=-4.5V 17 td(off) RGEN =3Ω, RL=2.5Ω, 94 tf nC ns 35 Notes: 1. Repetitive rating,pulse width limited by junction temperature. 2. Pulse Test : Pulse width≦300µs, duty cycle≦2%. 3. These parameters have no way to verify. B,Apr,2011 CJ3415 Typical Characteristics Output Characteristics 25 -8.0V Ta=25℃ -3.0V -4.5V -2.5V Ta=25℃ Pulsed Pulsed VGS=-2.0V 8 DRAIN CURRENT ID ID (A) (A) 20 15 DRAIN CURRENT Transfer Characteristics 10 VGS=-1.5V 10 5 6 4 2 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0 0.0 5 (V) 0.5 1.0 1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 2.0 (V) VGS —— 60 80 VGS Ta=25℃ Ta=25℃ Pulsed 55 60 VGS=-2.5V 50 RDS(ON) 70 (mΩ) VGS=-1.8V 50 ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Pulsed 45 ID=-4A 40 40 35 VGS=-4.5V 30 30 2 3 4 5 6 DRAIN CURRENT IS —— 7 ID 8 9 10 0 2 4 6 GATE TO SOURCE VOLTAGE (A) 8 VGS 10 (V) VSD 10 Ta=25℃ Pulsed SOURCE CURRENT IS (A) 1 0.1 0.01 1E-3 1E-4 1E-5 0.0 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 0.8 VSD 1.0 (V) B,Apr,2011