WILLAS FM120-M+ SE2312 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. N-Channel 20-V(D-S) MOSFETprotection. for overvoltage • Guardring • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. APPLICATIONS • Lead-free parts meet environmental standards of MIL-STD-19500 z DC/DC Converters/228 • RoHS product for packing code suffix "G" z LoadHalogen Switching for Portable Applications free product for packing code suffix "H" z 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-23 0.071(1.8) 0.056(1.4) 1. GATE 2. SOURCE 3. DRAIN Pb-Free packagedata is available Mechanical Epoxy : UL94-V0 rated flame retardant • RoHS product for packing code suffix ”G” • Case : Molded plastic, SOD-123H Halogen free product for packing code suffix “H” , 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% MARKING: S12 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 20 30 40 Maximum DC Blocking Voltage Maximum ratings (Ta=25℃ unless Maximum Average Forward Rectified Current VDC otherwise Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) Drain-Source Voltage IO IFSM 16 60 18 80 35 42 50 60 Symbol VDS 20 Gate-Source Voltage Typical Junction Capacitance (Note 1) CJ VGS ±8.0 Operating Temperature Range Continuous Drain Current TJ t=5s TSTG Continuous Source-Drain Diode Current CHARACTERISTICS ID -55 to +125 IDM 5 105 140 100 150 200 20 Unit V -55 to +150 RθJA 357 Junction Temperature TJ 150 Storage Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Tstg -50 ~+150 @T A=125℃ NOTES: 70 80 A IS FM130-MH FM140-MH FM150-MH 1.04 FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH Thermal Resistance from Junction to Ambient Rated DC Blocking Voltage 56 - 65 to +175 IR Maximum Average Reverse Current at @T A=25℃ 120 200 PD Maximum Power Dissipation 115 150 40 120 VF t=5s Maximum Forward Voltage at 1.0A DC 10 100 1.0 Value30 RΘJA Storage Temperature Range 15 50 Typical Thermal Resistance (Note 2) Pulsed Drain Current noted) 14 40 0.50 0.70 0.35 0.85 0.5 10 W 0.9 0.92 ℃/W ℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2312 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Electrical characteristics (T =25℃ unless otherwise noted) • Guardring for overvoltagea protection. • Ultra high-speed switching. Parameter Test Condition epitaxial planar chip, metalSymbol silicon junction. • Silicon Static • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Min 0.012(0.3) Typ. Typ Max 0.071(1.8) 0.056(1.4) Unit MIL-STD-19500 /228 Drain-source voltagecode suffixV"G" (BR) DSS product for packing • RoHSbreakdown Halogen free product for packing code suffix "H" VGS = 0V, ID =250µA 20 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 Zero gate voltage drain current I VDS =20V, VGS =0V 1.0 Mechanical data DSS • Epoxy : UL94-V0 rated flame retardant Gate-source VDS =VGS, ID =250µA : Molded voltage plastic, SOD-123H VGS(th) • Casethreshold VGS =4.5V, ,ID =5.0A • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 a Drain-source on-state resistance RDS(on) • Polarity : Indicated by cathode band 0.45 µA 0.040(1.0) 0.024(0.6) 1.0 0.031(0.8) Typ. V 0.031(0.8) Typ. 0.0318 VGS =2.5V, ID =4.7A 0.0356 Ω Dimensions in inches and (millimeters) VGS =1.8V, ID =4.3A • Mounting Position : Any Forward tranconductancea gfS • Weight : Approximated 0.011 gram nA 0.0414 6 VDS =10V, ID =5.0A S Dynamicb MAXIMUM RATINGS ANDC ELECTRICAL CHARACTERISTICS Input capacitance iss RATINGS Gate resistance RgSYMBOL Marking Code 55 FM160-MH FM180-MH 4.8 FM1100-MH FM1150-MH FM120-MH FM130-MH FM1200-MH f =1MHzFM140-MH FM150-MH0.5 Ω td(on) 14 40 15 50 16 60 18 80 10 Rise timeRMS Voltage Maximum tr VRMS VGEN14 =5V,VDD21 =10V, 28 td(off) VDC ID =4A,R 20 G=1Ω, 30 RL=2.2Ω 40 35 42 56 20 70 50 60 80 32100 Maximum Delay DC Blocking Turn-off time Voltage VRRM Maximum Fall yimeAverage Forward Rectified Current superimposed on rated load (JEDEC method) Forward diode voltage Typical Thermal Resistance (Note 2) tf RΘJA CJ TJ a.Operating Pulse Temperature Test : pulseRange width ≤300µs, duty cycle ≤2%. Storage Temperature Range b. These parameters have no way to verify. CHARACTERISTICS VGS =0V,IS=4A 40 120 -55 to +125 120 200 105 140 150 200 12 0.75 ns 115 150 1.2 V -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 100 1.0 30 TSTG VF Maximum Forward Voltage at 1.0A DC 13 30 IFSM VSD Notes Typical: Junction Capacitance (Note 1) 12 20 IO Peak Forward Surge Current 8.3 ms single half sine-wave Drain-source body diode characteristics pF 105 Turn-on delay Time Maximum Recurrent Peak Reverse Voltage 865 Ratings at 25℃ ambient temperature unless otherwise specified. VDS =10V,VGS =0V,f =1MHz Output capacitance Coss Single phase half wave, 60Hz, resistive of inductive load. Reverse transfer Crss For capacitive load,capacitance derate current by 20% @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2312 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Typical Characteristics Features • Batch process design, excellent power dissipation offers Characteristics better reverseOutput leakage current and thermal resistance. o to mounted application inTa=25 order • Low profileV surface C =2 thru 4.5 GS optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. 12 • High surge capability. • Guardring for overvoltage protection. VGS=1.5V • Ultra high-speed switching. •8 Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 4 Transfer Characteristics SOD-123H 10 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. ID (A) 8 6 DRAIN CURRENT DRAIN CURRENT ID (A) 16 Mechanical data 0.071(1.8) 0.056(1.4) 4 2 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant V =1V • Case : Molded plastic, SOD-123H 0 , 0 1 2 3 4 5 • Terminals :Plated terminals, solderable per MIL-STD-750 GS DRAIN TO SOURCE VOLTAGE VDS Method 2026 o Ta=25 C 0.031(0.8) Typ. 0.6 0.8 0 0.4 (V) 1.0 1.2 GATE TO SOURCE VOLTAGE • Polarity : Indicated by cathode band • Mounting PositionI: Any —— VSD S 20• Weight : Approximated 0.011 gram 0.031(0.8) Typ. 1.6 1.8 1.4 VGS (V) Dimensions in inches and (millimeters) RDS(ON) —— VGS 100 o Ta=25 C 10 0.1Code Marking Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum 0.01 DC Blocking Voltage VDC 20 Peak Forward Surge Current 8.3 ms single half sine-wave 0.2 load (JEDEC 0.4 0.6 on rated method) 0.8 1.0 CJ Operating Temperature Range TJ —— ID 60 14 40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 ID=3.0A 1.0 30 20 0 2 4 GATE TO SOURCE 40VOLTAGE 120 -55 to +125 6 V GS 8 (V) -55 to +150 - 65 to +175 TSTG o Ta=25 C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC 0.50 50 Maximum Average Reverse Current at @T A=25℃ (mΩ) 40 30 1.2 Typical Junction Capacitance (Note 1) CHARACTERISTICS RDS(ON) NOTES:40 0.70 0.85 0.9 0.92 0.5 IR @T A=125℃ Rated DC Blocking Voltage 21 o Ta=25 C IFSM SOURCE(Note TO DRAIN Typical Thermal Resistance 2) VOLTAGE VSD (V) RΘJA 13 30 IO Maximum Average Forward Rectified Current Storage Temperature RangeRDS(ON) ON-RESISTANCE 60 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS 1E-3 0.0 superimposed 80 RDS(ON) IS (A) SOURCE CURRENT (mΩ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 1 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 10 VGS=1.8V ON-RESISTANCE 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 30 VGS=2.5V 20 VGS=4.5V 10 0 2012-06 2012-10 2 4 6 8 DRAIN CURRENT 10 ID 12 (A) 14 16 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE2312 THRU FM1200-M+ SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Mechanical data .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage VRRM Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 28 35 42 56 30 40 50 60 80 VF @T A=125℃ IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 100 70 .003(0.08) 21 20 Maximum Average Reverse Current at @T A=25℃ 18 80 100 120 200 Vo 105 140 Vo 150 200 Vo 150 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC NOTES: .008(0.20) 10 115 16 60 TSTG .004(0.10)MAX. Rated DC Blocking Voltage 15 50 14 TJ Operating Temperature Range 14 40 VDC CJ Typical Junction Capacitance (Note 1) 13 30 VRMS RΘJA Typical Thermal Resistance (Note 2) 12 20 0.50 0.70 0.85 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.9 0.92 Vo 10 mA Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP. SE2312 SOT-23 Plastic-Encapsulate MOSFETS Ordering Information: Device PN SE2312‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.