MMBTA1xLT1 Darlington Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” ORDERING INFORMATION Device Moisture Sensitivity Level 1 Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc IC 300 mAdc Collector Current — Continuous SOT–23 COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C R θJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C R θJA T J , T stg 2 EMITTER DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14 LT1 = 1N; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 — Vdc I CBO — 100 nAdc I EBO — 100 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-11 WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistor ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 (I C = 100mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) –– 5,000 10,000 10,000 20,000 — — — — VCE(sat) –– 1.5 Vdc V BE — 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) fT (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) 125 — MHz 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4. f T = |h f e | *f test . RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2012-11 WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistor NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 2.0 100 I n , NOISE CURRENT (pA) S 200 10 µA 50 100µA 20 IC=1.0mA 10 5.0 V T, TOTAL WIDEBAND NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz R ~ ~0 1.0 0.7 0.5 IC=1.0mA 0.3 0.2 100µA 0.1 10µA 0.03 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 10 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 3. Noise Current 200 500 BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 I C = 10 µA 50 100 µA 30 20 1.0 mA 2.0 50k 100k BANDWIDTH = 10 Hz TO 15.7 kHz 200 10 µA 100 50 100 µA 20 I C = 1.0 mA 10 10 1.0 5.0k 10k 20k Figure 2. Noise Voltage 5.0 10 20 50 100 200 500 R S , SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage 2012-11 BANDWIDTH = 1.0 Hz 0.07 0.05 NF, NOISE FIGURE (dB) e n , NOISE VOLTAGE (nV) 500 1.0k 5.0 1.0 2.0 5.0 10 20 50 100 200 500 1.0k R S , SOURCE RESISTANCE (kΩ) Figure 5. Wideband Noise Figure WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistor SMALL–SIGNAL CHARACTERISTICS T J =25°C 10 7.0 C ibo C obo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 4.0 |h fe |, SMALL– SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 V CE = 5.0 V f = 100 MHz T J = 25°C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 1.0 70k 25°C 30k 20k 10k –55°C V CE= 5.0V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 500 V, VOLTAGE ( VOLTS ) V BE(sat) @ I C /I B = 1000 V BE(on) @ V CE = 5.0 V 1.0 V CE(sat) @ I C /I B = 1000 10 20 30 50 70 100 200 300 C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages 2012-11 500 T J= 25°C 2.5 I C = 10mA 50 mA 250mA 500mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I B , BASE CURRENT (µA) 1.2 7.0 200 Figure 9. Collector Saturation Region 1.4 5.0 100 Figure 8. DC Current Gain T J = 25°C 0.6 50 I C , COLLECTOR CURRENT (mA) 1.6 0.8 V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 100k 5.0k 20 3.0 500 R θV , TEMPERATURE COEFFICIENTS (mV/°C) h FE , DC CURRENT GAIN T J= 125°C 7.0k 10 Figure 7. High Frequency Current Gain Figure 6. Capacitance 50k 5.0 I C , COLLECTOR CURRENT (mA) V R, REVERSE VOLTAGE (VOLTS) 200k 2.0 –1.0 –2.0 *APPLIES FOR I C /I B <h FE /3.0 +25°C TO +125°C * R θVC for V CE(sat) –55°C TO +25°C –3.0 +25°C TO +125°C –4.0 θ VB for V BE –5.0 –55°C TO +25°C –6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients WILLAS ELECTRONIC CORP. MMBTA1xLT1 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) Darlington Amplifier Transistor 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.1 0.05 SINGLE PULSE SINGLE PULSE 0.07 0.05 0.03 Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z 0.02 Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) θJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response I C , COLLECTOR CURRENT (mA) 1.0k 1.0 ms 700 FIGURE A 500 300 T C = 25°C T A = 25°C 200 tP 100µs 1.0 s PP P 100 70 50 t 30 CURRENT LIMIT 20 THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 1/f DUTY CYCLE =t 1 f = 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13.Active Region Safe Operating Area 2012-11 P 40 t1 tP PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data WILLAS ELECTRONIC CORP. MMBTA1xLT1 Darlington Amplifier Transistor .110(2.80) .063(1.60) .047(1.20) .122(3.10) .106(2.70) .083(2.10) .006(0.15)MIN. SOT-23 .008(0.20) .080(2.04) .070(1.78) .003(0.08) .020(0.50) .012(0.30) .055(1.40) .035(0.89) .004(0.10)MAX. Dimensions in inches and (millimeters) 2012-11 WILLAS ELECTRONIC CORP. Darlington Amplifier Transistor MMBTA1xLT1 Ordering Information: Device PN Part Number G(1)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-11 WILLAS ELECTRONIC CORP.