MMBTA13LT1 D

MMBTA13L, SMMBTA13L,
MMBTA14L, SMMBTA14L
Darlington Amplifier
Transistors
NPN Silicon
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
30
Vdc
Collector −Base Voltage
VCBO
30
Vdc
Emitter −Base Voltage
VEBO
10
Vdc
IC
300
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
BASE
1
EMITTER 2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
1x M G
G
1
1x
M
G
= Device Code
x = M for MMBTA13LT1G,
SMMBTA13LT1G
x = N for MMBTA14LT1G,
SMMBTA14LT1G, T3G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 5
1
Shipping†
MMBTA13LT1G,
SOT−23
SMMBTA13LT1G (Pb−Free)
3,000 / Tape & Reel
MMBTA14LT1G,
SOT−23
SMMBTA14LT1G (Pb−Free)
3,000 / Tape & Reel
SMMBTA14LT3G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBTA13LT1/D
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
30
−
−
100
−
100
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
Vdc
nAdc
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
(IC = 100 mAdc, VCE = 5.0 Vdc)
MMBTA13, SMMBTA13
MMBTA14, SMMBTA14
hFE
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
VCE(sat)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
VBE
−
5000
10,000
−
−
10,000
20,000
−
−
−
1.5
−
2.0
125
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
MHz
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
i n, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
100
10 mA
50
100 mA
20
IC = 1.0 mA
10
1.0
0.7
0.5
IC = 1.0 mA
0.3
0.2
100 mA
0.1
0.07
0.05
10 mA
0.03
5.0
10 20
50 100 200
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
50k 100k
0.02
10 20
50 100 200
50k 100k
Figure 3. Noise Current
14
200
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
Figure 2. Noise Voltage
500 1k 2k 5k 10k 20k
f, FREQUENCY (Hz)
IC = 10 mA
70
50
100 mA
30
20
1.0 mA
10
1.0
2.0
10
10 mA
8.0
100 mA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
500
0
1.0
1000
Figure 4. Total Wideband Noise Voltage
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
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3
500
1000
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
SMALL−SIGNAL CHARACTERISTICS
20
|h fe |, SMALL-SIGNAL CURRENT GAIN
4.0
TJ = 25°C
C, CAPACITANCE (pF)
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
VCE = 5.0 V
f = 100 MHz
TJ = 25°C
2.0
1.0
0.8
0.6
0.4
0.2
0.5
40
1.0
200k
hFE, DC CURRENT GAIN
TJ = 125°C
100k
70k
50k
25°C
30k
20k
10k
7.0k
5.0k
-55°C
VCE = 5.0 V
3.0k
2.0k
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
TJ = 25°C
2.5
IC = 10 mA
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.4
V, VOLTAGE (VOLTS)
50 mA
250 mA
500 mA
2.0
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)
100 200
500 1000
Figure 9. Collector Saturation Region
1.6
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
0.6
10
500
3.0
Figure 8. DC Current Gain
5.0 7.0
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
2.0
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
500
-1.0
-2.0
*APPLIES FOR IC/IB ≤ hFE/3.0
25°C TO 125°C
*RqVC FOR VCE(sat)
-55°C TO 25°C
-3.0
25°C TO 125°C
-4.0
qVB FOR VBE
-5.0
-55°C TO 25°C
-6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
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4
500
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
ZqJC(t) = r(t) • RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) - TA = P(pk) ZqJA(t)
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
Figure 12. Thermal Response
1.0k
700
500
IC, COLLECTOR CURRENT (mA)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
300
200
1.0 ms
TC = 25°C
TA = 25°C
100 ms
1.0 s
100
70
50
30
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
20
10
0.4 0.6
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
40
Figure 13. Active Region Safe Operating Area
FIGURE A
tP
PP
PP
t1
1/f
t
DUTYCYCLE + t1f + 1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
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5
1.0k
2.0k
5.0k
10k
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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MMBTA13LT1/D