SMG2302B 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 SOT– 23 Qualified and PPAP Capable. 3 APPLICATIONS ● Power Management in Notebook ● Portable Equipment ● Load Switch ● DSC 1 Ordering Information Device Marking SMG2302B 02B Shipping 2 3000/Tape& Reel Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain TA=25℃ Current(tJ=150℃) TA=70℃ Pulsed Drain Current Maximum Body-Diode Continuous Current Maximum Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Maximum Junction-to-Ambient 2.8 ID IDM 10 IS 1.6 A 1.25 PD W 0.8 TJ RthJA A 2.2 150 ℃ T≦10 sec 77 Steady State 105 ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper 2014-05 WILLAS ELECTRONIC CORP. SMG2302B 20V N-Channel Enhancement-Mode MOSFET ELECTRICAL CHARACTERISTICS Symbol Parameter Limit Min Typ Max 0.9 1.2 Unit STATIC PARAMETERS V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.6 IGSS Gate-Body Leakage Current VDS=0V, VGS=±8V ±100 VDS=20V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V 10 TJ=55℃ ID(ON) RDS(ON) VSD On-State Drain Current a Drain-Source On-Resistance Diode Forward Voltage VDS≧5V, VGS= 4.5V 6 VDS≧5V, VGS= 2.5V 4 nA μA A VGS=4.5V, ID= 2.8A 55 85 VGS=2.5V, ID= 2.5A 65 115 VGS=1.8V, ID= 2.2A 80 130 0.75 1.2 IS=1A, VGS=0V V mΩ V DYNAMIC PARAMETERS Qg Total Gate Charge 9 Qgs Gate-Source Charge Qgd Gate-Drain Charge 3 Ciss Input Capacitance 450 Coss Output Capacitance Crss Reverse Transfer Capacitance 22 td(on) Turn-On Delay Time 9 tr Rise Time VDD=10V, RL =10Ω 23 td(off) Turn-Off Delay Time VGEN=4.5Ω, RG=6Ω 38 tf Fall Time VDS=10V, VGS=4.5V, ID=2.8A VDS=10V, VGS=0V, f=1MHZ 2.2 72 nC pF ns 3 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% 2014-05 WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET Typical Characteristics (TJ =25℃ Noted) 2014-05 SMG2302B WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET SMG2302B Typical Characteristics (TJ =25℃ Noted) 2014-05 WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU SMG2302B FM1200-M+ 20V N-Channel Enhancement-Mode MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-23 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .122(3.10) .106(2.70) • Epoxy : UL94-V0 rated flame retardant .063(1.60) .047(1.20) Halogen free product for packing code suffix "H" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .083(2.10) .110(2.80) Dimensions in inches and (millimeters) .008(0.20) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .080(2.04) .070(1.78) Maximum RMS Voltage VRRM 12 20 VRMS 14 21 28 35 Maximum DC Blocking Voltage VDC 20 30 40 50 Maximum Average Forward Rectified Current IO IFSM Marking Code Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 13 30 14 40 15 50 16 60 18 80 10 115 150 120 200 Vo 42 100 .003(0.08) 56 70 105 140 Vo 60 80 100 150 200 Vo 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .020(0.50) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .012(0.30) NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 2- Thermal Resistance From Junction to Ambient 0.50 .055(1.40) .035(0.89) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.9 0.5 0.92 Vo mA 10 Dimensions in inches and (millimeters) 2012-06 2014-05 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. 20V N-Channel Enhancement-Mode MOSFET SMG2302B Ordering Information: Device PN SMG2302B ‐T(1 )G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014-05 WILLAS ELECTRONIC CORP.