WILLAS FM120-M+ DTC114YUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Features • 50 --70 100 200 150 --- .010(0.25) .003(0.08) ry ---6 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. --40 Unit V V --- mA ----150 mW ć ć im ina IC(MAX) Pd Tj Tstg Method 2026 Supply voltage Input voltage • Polarity : Indicated by cathode band Output current • Mounting Position : Any Power dissipation • Weight : Approximated 0.011 gram Junction temperature Storage temperature --- -----55 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case Absolute maximum ratings @ 25к , terminals, solderable Min per MIL-STD-750 Symbol • Terminals :Plated Parameter Typ Max VCC VIN IO 0.146(3.7) 0.130(3.3) .096(2.45) .078(2.00) • .004(0.10)MIN. • • • SOD-123H SOT-323 better reverse leakage current and thermal resistance. Pb-Free package is available • Low profile surface mounted application in order to space. code suffix ”G” RoHS optimize productboard for packing Low power loss, high efficiency. • Halogen free product for packing code suffix “H” current capability, low forward voltage drop. • High Epoxy meets UL 94 V-0 flammability rating • High surge capability. Moisure Sensitivity Level 1 • Guardring for overvoltage protection. Built-in bias resistors enable the configuration of an inverter circuit • Ultra high-speed switching. without connecting external input resistors • Silicon epitaxial planar chip, metal silicon junction. The bias resistors consist of thin-film resistors with complete • Lead-free parts meet environmental standards of isolation to allow negative MIL-STD-19500 /228 biasing of the input. They also have the advantage of almost completely parasitic effects. suffix "G" • RoHS product for packing code eliminating Only the on/off conditions need to be set for operation, making Halogen free product for packing code suffix "H" device design easy Mechanical data .054(1.35) .045(1.15) • .087(2.20) .070(1.80) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% Electrical Characteristics @ 25к For capacitive .047(1.20) Min Max UnitFM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH FM130-MH SYMBOLTyp FM120-MH --- 12 --- 13 V 0.3 14 15 16 18 10 115 120 ----1.4 V .004(0.10)MAX. 20 30 40 50 60 80 100 150 200 VRRM --0.1 0.3 V 35 42 56 70 105 140 VRMS --- 14 0.88 21 mA 28 ----50 60 80 100 150 200 VDC --- 20 0.5 30 A 40 .016(0.40) 68 ----1.0 13 .008(0.20) K¡ 7.0 IO 10 3.7 4.7 5.7 30 IFSM --250 --MHz RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .043(1.10) .032(0.80) Pr el Symbol Parameter RATINGS VI(off) Input voltage (VCC=5V, IO=100A) Marking Code VI(on) (VO=0.3V, IO=1mA) Maximum Recurrent Peak Reverse Voltage VO(on) Output voltage (I= O/II 5mA/0.25mA) Maximum RMS II = InputVoltage current (VI 5V) IO(off) Output current (VCC = =50V, VI 0) Maximum DC Blocking Voltage GI DC current gain (VO=5V, = IO 5mA) Maximum Average Forward Rectified Current R Input resistance 1 R2/R1 Resistance ratio Peak Forward Surge Current 8.3 ms single half sine-wave Transition frequency fT superimposed rated load (JEDEC method) (VOon=10V, IO=5mA, f=100MHz) Typical Thermal Resistance (Note 2) .056(1.40) Dimensions in inches and (millimeters) -55 to +125 Suggested Solder Pad Layout SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF *Marking: 64 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +150 - 65 to +175 TSTG CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 40 120 @T A=125℃ IR 0.50 0.70 0.70 0.90 0.9 0.85 0.92 0.5 10 1.90 NOTES: mm 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.65 0.65 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DTC114YUATHRU NPN Digital Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Features Pb Free Product PACKAGE Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Device PN Packing 0.130(3.3) forward voltage drop. • High current capability,(1)low(2) G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability. • HighDTC114YUA –T for overvoltage protection. • Guardring Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction. • Silicon Lead-free parts meet environmental standards of • MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.071(1.8) 0.056(1.4) Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) ina ry 0.012(0.3) Typ. 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** Pr el im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 contained are intended to provide a product description only. "Typical" parameters 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. A Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A use of any product or circuit. superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ - 65 to +175 TSTG life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR m of WILLAS. Customers using or selling WILLAS components for use in 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . Storage Temperature Range 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.