SMG2301B(SOT 23)

SMG2301B
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
APPLICATIONS
● Power Management in Note book
SOT– 23
● Portable Equipment
● Battery Powered System
3
● Load Switch
3
● DSC
G
Ordering Information
Device
Marking
SMG2301B
01B
D
1
1
S
2
Shipping
3000/Tape& Reel
Parameter
2
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
TA=25℃
(Tj=150℃)*
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation
-2.0
ID
IDM
TA=25℃
TA=70℃
A
-1.6
-10
A
0.7
PD
W
0.45
TJ
-55 to 150
℃
Storage Temperature Range
Tstg
-55 to 150
℃
Thermal Resistance-Junction to Ambient*
RθJA
Operating Junction Temperature
2014-05
Typical
Maximum
100
175
℃/W
WILLAS ELECTRONIC CORP.
SMG2301B
20V P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limit
Min
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
-20
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250μA
-0.4
IGSS
Gate Leakage Current
IDSS
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance a
VSD
Diode Forward Voltage
Typ
Max
Unit
STATIC
V
-0.6
-1
V
VDS=0V, VGS=±8V
±100
nA
VDS=-20V, VGS=0V
-1
μA
VGS=-4.5V, ID= -2.8A
90
110
VGS=-2.5V, ID= -2.0A
110
150
IS=-1A, VGS=0V
-0.7
-1.4
mΩ
V
DYNAMIC
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Rg
Gate resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
VDS=-6V, RL =6Ω
30
td(off)
Turn-Off Delay Time
RGEN=6Ω, VGS=-4.5V
40
tf
Turn-Off Fall time
2014-05
VDS=-6V, VGS=-4.5V,
ID=-2.8A
7.2
2.2
nC
1.2
VDS=0V, VGS=0V, f=1MHz
7.5
Ω
480
VDS=-15V, VGS=0V,
46
f=1MHz
pF
10
50
11
WILLAS ELECTRONIC CORP.
ns
SMG2301B
20V P-Channel Enhancement-Mode MOSFET
2014-05
WILLAS ELECTRONIC CORP.
SMG2301B
20V P-Channel Enhancement-Mode MOSFET
2014-05
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
SMG2301B
FM1200-M+
20V
P-Channel
Enhancement-Mode
MOSFET
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-23
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.122(3.10)
.106(2.70)
• Epoxy : UL94-V0 rated flame retardant
.063(1.60)
.047(1.20)
Halogen free product for packing code suffix "H"
Mechanical data
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
.008(0.20)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.080(2.04)
.070(1.78)
Maximum RMS Voltage
VRRM
12
20
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Marking Code
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
13
30
14
40
15
50
16
60
18
80
10
115
150
120
200
Vo
42
100
.003(0.08)
56
70
105
140
Vo
60
80
100
150
200
Vo
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
.020(0.50)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.012(0.30)
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
2- Thermal Resistance From Junction to Ambient
0.50
.055(1.40)
.035(0.89)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.9
0.5
0.92
Vo
mA
10
Dimensions in inches and (millimeters)
2012-06
2014-05
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
20V P-Channel Enhancement-Mode MOSFET
SMG2301B
Ordering Information: Device PN SMG2301 ‐T(1 )G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 3 Kpcs/Reel (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014-05
WILLAS ELECTRONIC CORP.