WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features complianceoffers with RoHS requirements. We declare the material of product processthat design, excellent power dissipation •zBatch better reverse leakageLevel current Moisture Sensitivity 1 and thermal resistance. SOD-123H profilepackage surface mounted application in order to • Low Pb-Free is available optimize board space. RoHS product for packing code suffix ”G” • Low power loss, high efficiency. Halogen free product low for packing suffix “H” current capability, forward code voltage drop. • High surge capability. • High Ordering Information • Guardring for overvoltage protection. Device Marking Shipping switching. • Ultra high-speed epitaxial planar chip, metal silicon3000/Tape&Reel junction. • Silicon MMBTH10LT1 3EM • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MAXIMUM RATINGS MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Rating Symbol Halogen free product for packing code suffix "H" Mechanical Collector–Emitterdata Voltage V CEO Value Unit 25 Vdc SOT–23 0.040(1.0) Vdc 0.024(0.6) : UL94-V0 Voltage rated flame retardant • Epoxy Collector–Base V CBO 30 : Molded plastic, SOD-123H • Case Emitter–Base Voltage V EBO 3.0 , • Terminals :Plated terminals, solderable per MIL-STD-750 Vdc 3 COLLECTOR 0.031(0.8) Typ. 0.031(0.8) Typ. 1 BASE 2026 THERMAL Method CHARACTERISTICS • Polarity : Indicated by cathode band Characteristic Position : Any • Mounting Total Device Dissipation FR– 5 Board, (1) • Weight : Approximated 0.011 gram TA = 25°C Max Unit PD 225 mW 2 EMITTER 1.8 mW/°C Derate above 25°C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Thermal Resistance, Junction to Ambient RθJA 556 °C/W Ratings at 25℃ temperature unless otherwise specified. Totalambient Device Dissipation 300 mW PD Single phaseAlumina half wave, 60Hz, resistive of inductive load. Substrate, (2) TA = 25°C 2.4 mW/°C For capacitive load,above derate25°C current by 20% Derate Thermal Resistance, RθJA FM130-MH FM140-MH 417 °C/W FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT FM150-MH RATINGS Junction to AmbientSYMBOL FM120-MH TJ , Tstg 13 –55 to14 +150 15 °C Marking CodeJunction and Storage Temperature 12 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM MaximumDEVICE RMS Voltage MARKING Maximum DC Blocking Voltage MMBTH10LT1= 3EM VRMS 14 21 28 35 42 56 70 105 140 Volts VDC 20 30 40 50 60 80 100 150 200 Volts IO Maximum Average Forward Rectified Current Typ 1.0 30 Max -55 to +125 25 V (BR)CEO — 40 120 — V (BR)CBO - 65 to +175 — — ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Typical Thermal Resistance (Note 2) OFF CHARACTERISTICS RΘJA Characteristic superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Collector–Emitter Breakdown Voltage (I = 1.0 mAdc, I B= 0 ) C Storage Temperature Range Collector–Base Breakdown Voltage µAdc , I E = 0) (I C = 100 CHARACTERISTICS Emitter–Base Maximum Forward Voltage atBreakdown 1.0A DC Voltage µAdc ,Current I C= 0) at @T A=25℃ (I E = 10 Maximum Average Reverse Collector Cutoff Rated DC Blocking Voltage Current @T A=125℃ NOTES: Symbol Min TSTG 30 Amps ℃/W PF Vdcto +150 -55 ℃ ℃ Vdc VF IR V (BR)EBO 0.50 3.0 — 0.70 — 0.85 Vdc 0.5 — — 10100 nAdc I CBO — — 100 uAdc Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) I EBO — — 100 nAdc Emitter Cutoff Current I EBO — — 10 uAdc ( V CB = 25Vdc , I E = 0 ) Collector Cutoff Current 0.9 0.92 Volts I CBO CB Amps Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 1- Measured at( 1VMHZ= and applied 30Vdc , I reverse = 0 ) voltage of 4.0 VDC. Dimensions in inches and (millimeters) Symbol mAmp E 2- Thermal Resistance From Junction to Ambient (V = 3.0Vdc , I = 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to ELECTRICAL (T A = 25°C unless otherwise noted) (Continued) optimize boardCHARACTERISTICS space. • Low power loss, high efficiency. Characteristic HighCHARACTERISTICS current capability, low forward voltage drop. • ON capability. • High surge DC Current Gain for overvoltage protection. • Guardring (I C = 4.0 mAdc, V CE = 10 Vdc) • Ultra high-speed switching. Collector–Emitter Saturation Voltage • Silicon epitaxial planar chip, metal silicon junction. (I C = 4.0mAdc, I B = 0.4 mAdc) • Lead-free parts meet environmental standards of • Symbol Min Typ hFE 60 — Base–Emitter On Voltage MIL-STD-19500 /228 V CEcode = 10Vdc) (I C = 4.0mAdc, RoHS product for packing suffix "G" Halogen free product for packing code suffix "H" Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. — 0.071(1.8) 0.056(1.4) VCE(sat) — — 0.5 V BE — — 0.95 650 — — — 0.7 pF — 0.65 pF — 9.0 ps Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Mechanical data Current Gain–Bandwidth Product fT • Epoxy : UL94-V0 rated flame retardant (V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz) Molded plastic, SOD-123H • Case : Collector –Base Capacitance C cb, • Terminals terminals, = 10 Vdc, I E = 0, f solderable = 1.0 MHz) per MIL-STD-750 (V CB:Plated • • • Method 2026 Collector –Base Feedback Capacitance (V = 10 Vdc, I 1.0 MHz) CB E = 0, f = band Polarity : Indicated by cathode Collector Base Time Constant Mounting Position : Any ( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz) Weight : Approximated 0.011 gram C 0.031(0.8) Typ. — — rb rb’ C C 0.040(1.0) 0.024(0.6) MHz 0.031(0.8) Typ. Dimensions in inches and (millimeters) — MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to TYPICAL CHARACTERISTICS optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) COMMON–BASE voltage drop. y PARAMETERS versus FREQUENCY • High current capability, low forward (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C) • High surge capability. • Guardring for overvoltage protection. yib , INPUT ADMITTANCE • Ultra high-speed switching. • Silicon80epitaxial planar chip, metal silicon junction. 0 • Lead-free parts meet environmental standards of g ib y ib , INPUT ADMITTANCE(mmhos) MIL-STD-19500 /228 70 60 Halogen free product for packing code suffix "H" –20 jb ib (mmhos) 50 Mechanical data –b ib • Epoxy40: UL94-V0 rated flame retardant • Case :30Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 20 –30 –40 1000MHz 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 700 400 Method 2026 200 –50 10 • Polarity : Indicated by cathode band 0 Position : Any • Mounting 100 200 300 400 • Weight : Approximated 0.011 gram 100 Dimensions in inches and (millimeters) 500 700 –60 0 1000 10 20 30 f, FREQUENCY (MHz) 40 50 60 70 80 g ib (mmhos) 1. Rectangular Form MAXIMUMFigure RATINGS AND ELECTRICAL CHARACTERISTICS Figure 2. Polar Form y ib , FORWARD TRANSFER ADMITTANCE (mmhos) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. y fb , FORWARD TRANSFER ADMITTANCE For capacitive load, derate current by 20% Marking Code 70 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT b fb 60 VRRM Maximum Recurrent Peak Reverse Voltage 50 12 20 13 30 60 14 40 Maximum RMS Voltage VRMS 14 21 5028 Maximum DC Blocking Voltage VDC 20 30 40 –g fb 30 20 10Current 8.3 ms single half sine-wave Peak Forward Surge superimposed on rated 0 load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) –10 Typical Junction –20 Capacitance (Note 1) CJ Operating Temperature Range –30 TJ Storage Temperature 100Range jb fb(mmhos) 40 Maximum Average Forward Rectified Current 0.071(1.8) 0.056(1.4) –10 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 200 300 400 TSTG 500 15 50200 100 16 400 60 10 100 35 42 56 600 50 60 80 40 30 70 105 140 100 700 150 200 Volts 1000 40 ℃/W - 65 to +175 50 Amp 1000MHz 60 Volts Amp -55 to +125 70 120 200 40 120 20 115 150 Volts 1.0 30 10 700 18 80 PF -55 to +150 30 20 10 0 10 ℃ 20 ℃ 30 g fb (mmhos) f, FREQUENCY (MHz) FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH Figure 4. Polar0.85 Form Figure Volts 0.9 Maximum Forward Voltage at 1.0A DC 3. Rectangular 0.92 VFForm 0.50 0.70 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.5 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H y rb , REVERSE TRANSFER ADMITTANCE (mmhos) • Low profile surface mounted application in order to TYPICAL CHARACTERISTICS optimize board space. • Low power loss, high efficiency. drop. • High current capability, low forward voltage COMMON–BASE y PARAMETERS versus FREQUENCY • High surge capability. (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C) • Guardring for overvoltage protection. y rb , REVERSE TRANSFER ADMITTANCE • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 0 5.0 parts meet environmental standards of • Lead-free 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 100 • RoHS product for packing code suffix "G" 4.0 Halogen free product for packing code suffix "H" MPS H11 jb rb (mmhos) Mechanical data 3.0 • Epoxy : UL94-V0 rated flame retardant –b rb plastic, SOD-123H • Case : Molded –b rb 2.0 , • Terminals :Plated terminals, solderable per MIL-STD-750 1.0 MPS H1 Method 2026 • Polarity : Indicated by cathode band • Mounting0 Position : Any 100 200 300 • Weight : Approximated 0.011 gram 0.012(0.3) Typ. 500 200 –2.0 400 0.040(1.0) 0.024(0.6) –3.0 0.031(0.8) Typ. 0.031(0.8) Typ. 700 –4.0 –g rb 400 –1.0 Dimensions in inches and (millimeters) 1000MHz –5.0 700 2.0 1000 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0 g rb (mmhos) f, FREQUENCY (MHz) MAXIMUM Figure RATINGS AND ELECTRICAL CHARACTERISTICS Figure 6. Polar Form 5. Rectangular Form y ob , OUTPUT ADMITTANCE RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 Maximum RMS Voltage 9.0 VRMS 14 21 Maximum DC Blocking 8.0 Voltage VDC 20 30 Maximum Average7.0 Forward Rectified Current IO IFSM y ob , OUTPUT ADMITTANCE (mmhos) Maximum Recurrent 10Peak Reverse Voltage 6.0 Peak Forward Surge Current 8.3 ms single half sine-wave 5.0 b ob superimposed on rated load (JEDEC method) 4.0 3.0 Typical Junction Capacitance (Note 1) CJ 2.0 Operating Temperature Range TJ 1.0 Range Storage Temperature RΘJA Typical Thermal Resistance (Note 2) TSTG g ob jb ob (mmhos) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% -55 to +125 15 50 16 60 18 80 10 100 115 150 120 200 Volts 28 35 1000MHz 42 56 70 105 140 Volts 40 8.0 50 60 80 100 150 200 Volts 1.0 30 700 6.0 4.0 2.0 400 40 120 200 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 100 0 100 200 CHARACTERISTICS 14 40 10 ℃ 0 300 400 500 700 1000 0 FM150-MH 2.0 FM160-MH 4.0FM180-MH6.0 FM1100-MH8.0 FM1150-MH10 FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH Maximum Forward Voltage at 1.0A DC f , FREQUENCY (MHz) VF Maximum Average Reverse Current at @T7.A=25℃ Figure Rectangular IR Form @T A=125℃ Rated DC Blocking Voltage 0.50 0.70 0.85 g ob (mmhos) 0.5 Figure 8. Polar Form 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT-23 better reverse leakage current and thermal resistance. .006(0.15)MIN. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .122(3.10) • Guardring for overvoltage protection. • Ultra high-speed switching. .106(2.70) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" .110(2.80) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) .008(0.20) .080(2.04) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .070(1.78) .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) .020(0.50) CJ -55 to +125 TJ .012(0.30) TSTG Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0 30 .055(1.40) .035(0.89) .083(2.10) Halogen free product for packing code suffix "H" Mechanical data 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 0.50 0.70 Dimensions in inches and (millimeters)0.5 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ IR 0.85 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-11 Volts WILLAS ELECTRONIC CORP. mAmps WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Package outline SOD-123H • Low profile surface mounted application in order to optimize boardInformation: space. Ordering 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) capability. • High surge MMBTH10LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Ultra high-speed switching. •Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCand do vary in different applications and actual performance may vary over time. Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 WILLAS products are not designed, intended or authorized for use in medical, Typical Junction Capacitance (Note 1) CJ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range Storage Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.