WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to PNP Silicon optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. surge capability. • HighFEATURE ƽHighfor voltage. overvoltage protection. • Guardring ƽFor Telephony or Professional communication equipment applications. • Ultra high-speed switching. ƽ RoHS product forchip, packing code suffixjunction. "G" epitaxial planar metal silicon • Silicon Halogen product for packingstandards code suffixof"H" partsfree meet environmental • Lead-free 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ƽ Moisture Sensitivity Level 1 MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" DEVICE MARKING AND ORDERING INFORMATION Mechanical data : UL94-V0 rated flame retardant • Epoxy Device Marking Shipping : Molded plastic, SOD-123H2D • CaseMMBTA92LT1 3000/Tape&Reel , • Terminals :Plated terminals, solderable per MIL-STD-750 MMBTA93LT1 Method 2026 2E 0.040(1.0) SOT–230.024(0.6) 0.031(0.8) Typ. 3000/Tape&Reel 3 • Polarity : Indicated by cathode band Position : Any • Mounting MAXIMUM RATINGS • Weight : Approximated 0.011 gram Rating 0.031(0.8) Typ. Dimensions in inches and (millimeters) COLLECTOR Value Symbol MMBTA92 MMBTA93 1 BASE Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS –300 –200 Vdc Collector–Emitter Voltage V CEO Ratings at 25℃ ambient temperature unless otherwise specified. Collector–Base Voltage V CBO –300 –200 Single phase half wave, 60Hz, resistive of inductive load. Voltageby 20% V EBO –5.0 For capacitiveEmitter–Base load, derate current CollectorRATINGS Current — Continuous THERMAL CHARACTERISTICS Characteristic VRRM VRMS Total Device Dissipation FR– 5 Board, (1) Maximum DC Blocking Voltage VDC TA = 25°C Maximum Average Forward Rectified Current IO Derate above 25°C Thermal Resistance, Junction to Ambient Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Total Device Dissipation superimposed on rated load (JEDEC method) Maximum RMS Voltage Alumina Substrate, (2) TA = 25°C Derate above 25°C Typical Thermal Resistance (Note 2) Vdc 12 13 20 30 Symbol 14 21 PD 20 30 CJ Thermal Resistance, Junction to Ambient Operating Temperature Range TJ Junction and Storage Temperature Storage Temperature Range TSTG 14 40 Max 28 225 40 1.8 RθJA PD 15 50 35 50 Unit 16 60 18 80 10 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts mW mW/°C 556 300 °C/W mW 2.4 mW/°C RθJA -55 to +125 417 °C/W RΘJA Typical Junction Capacitance (Note 1) Vdc –500 FM130-MH mAdc I C SYMBOL FM120-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage 2 EMITTER TJ , Tstg –55 to +150 1.0 30 40 120 Amp Amp -55 to +150 °C - 65 to +175 ℃/W PF ℃ ℃ 1. FR–5 = 1.0 x 0.75 x 0.062 in. CHARACTERISTICS 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% SYMBOL alumina. FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 F 0.50 0.70 0.85 3. Pulse Test: Pulse Width < 300 µs, DutyVCycle < 2.0%. 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY HighMOUNT Voltage Transistor BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers A = 25°C ELECTRICAL unless otherwise noted.) better reverse CHARACTERISTICS(T leakage current and thermal resistance. • Low profile surface mounted application in order to Characteristic optimize board space. Low power loss, high efficiency. •OFF CHARACTERISTICS • High current capability, low forward voltage drop. Collector–Emitter Breakdown Voltage(3) surge capability. • High (I = –1.0 mAdc, I = 0) protection. C B • Guardring for overvoltage • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon Collector–Base Breakdown Voltage • Lead-free parts meet environmental standards of IE = 0) (IC = –100 µAdc, MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Emitter–Base Breakdown Voltage SOD-123H Symbol Min Max 0.146(3.7) 0.130(3.3) Unit 0.012(0.3) Typ. V(BR)CEO Vdc MMBTA92 –300 — MMBTA93 –200 — –300 — –200 — –5.0 — 0.071(1.8) 0.056(1.4) V(BR)CBO Vdc MMBTA92 MMBTA93 V(BR)EBO Mechanical (IE = –100 µAdc,data IC = 0) : UL94-V0 flame retardant • Epoxy Collector Cutoff rated Current : Molded plastic, • Case ( VCB = –200Vdc, IE =SOD-123H 0) , = –300Vdc, I = 0) solderable per MIL-STD-750 ( V CB E • Terminals :Plated terminals, ICBO µAdc 0.031(0.8) Typ. 2026 CollectorMethod Cutoff Current ( VEB = –6.0Vdc, IC = 0) Vdc 0.040(1.0) 0.024(0.6) — –0.1 — –100 0.031(0.8) Typ. IEBO • Polarity : Indicated by cathode band ( VEB = –5.0Vdc, IC = 0) • Mounting Position : Any ELECTRICAL CHARACTERISTICS (TA • Weight : Approximated 0.011 gram — — –0.05 –100 Dimensions in inches and (millimeters) µAdc µAdc = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ON CHARACTERISTICS (3) DC Current Gain hFE — Ratings at 25℃ ambient temperature unless otherwise specified. (I Chalf =–1.0mAdc, V CEresistive = –10 Vdc) Both Types 25 –– Single phase wave, 60Hz, of inductive load. (I C load, = –10derate mAdc,current V CE = –10Vdc) Both Types 40 –– For capacitive by 20% (I C = –30mAdc, V =–10 Vdc) MMBTA92 25 –– CE SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS MMBTA93 25 –– Marking Code 12 13 14 15 16 18 10 115 120 Collector–Emitter Saturation Voltage V Vdc 20 30 40 CE(sat) 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM (I C = –20mAdc, I B = –2.0 mAdc) MMBTA92 –– –0.5 Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS MMBTA93 –– –0.5 Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Base–Emitter Saturation Voltage V — –0.9 Vdc BE(sat) Amps Maximum Average Forward Rectified Current IO 1.0 I B = –2.0 mAdc) (I C = –20mAdc, Peak Forward Surge Current 8.3CHARACTERISTICS ms single half sine-wave SMALL–SIGNAL 30 IFSM Amps superimposed on rated load (JEDEC method) Current–Gain — Bandwidth Product(3),(4) Typical Thermal (Note RΘJA (I Resistance = –10mAdc, V 2) = –20Vdc, f = 100MHz) C CE Typical Junction Capacitance 1) Collector – Base(Note Capacitance Operating Temperature (V CB = –20Range Vdc, I E = 0, f = 1.0 MHz) Storage Temperature Range CJ TJ TSTG 50 40 120 fT -55 to +125 MMBTA92 C cb –– –– 6.0 - 65 to +175 –– 8.0 MMBTA93 ℃/W MHz PF pF -55 to +150 ℃ ℃ 3. Pulse CHARACTERISTICS Test: Pulse Width < 300 µs, Duty Cycle < FM120-MH 2.0%. FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 UNIT Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. power loss, high • Low 150 T J =efficiency. +125°C • High current capability, low forward voltage drop. surge capability. • High100 +25°C protection. • Guardring for overvoltage high-speed switching. • Ultra 70 chip, metal silicon junction. • Silicon –55°C 50 epitaxial planar • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) h FE , DC CURRENT GAIN Vdc V CE = –100.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS30product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 20 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant 15 –1.0 –3.0 –5.0 –7.0 –10 –20 plastic,–2.0 SOD-123H • Case : Molded 0.031(0.8) Typ. , I , COLLECTOR CURRENT (mA) C • Terminals :Plated terminals, solderable per MIL-STD-750 • Polarity : Indicated by cathode band 100 • Mounting Position : Any 50 : Approximated 0.011 gram • Weight f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 100 T J = 25°C 80 V CE = –20 Vdc 60 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. 10 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Marking Code –80 –100 0.031(0.8) Typ. Dimensions in inches and (millimeters) C ib –50 Figure 1. DC Current Gain Method 2026 20 –30 5.0 RATINGS 40 30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH20 Maximum Recurrent Peak Reverse Voltage VRRM 12 C20 cb 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS1.0 Voltage VRMS 14 21 35 42 56 70 105 140 Volts –50 –100 –200 VDC 20 0 28 –1.0 50 60 80 100 150 I C , COLLECTOR CURRENT (mA) 1.0 Figure 3. Current–Gain — Bandwidth Product 30 200 Volts 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 Maximum DC Blocking Voltage –20 –500 –1000 30 V R , REVERSE Maximum Average Forward Rectified Current VOLTAGE (VOLTS) IO 40 Figure 2. Capacitances Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) –1.0 Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range CHARACTERISTICS V, VOLTAGE (VOLTS) –0.8 TJ –0.6 –0.4 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage CJ –0.2 @T A=125℃ –5.0 RΘJA Typical Thermal Resistance (Note 2) Maximum Forward Voltage at 1.0A DC IFSM –2.0 –10 40 120 V BE @ V CE-55 = –10 toV+125 –20 –50 –100 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 0.50 0.70 0.85 0.5 IR 0.9 0.92 10 V CE(sat) @ I C /I B = 10 mA Volts mAmp NOTES: 0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 –1.0VDC.–2.0 2- Thermal Resistance From Junction to Ambient –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ HighMOUNT Voltage Transistor 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) 0.130(3.3) SOT-23 .063(1.60) .047(1.20) .122(3.10) Halogen free product for packing code suffix "H" .106(2.70) • RoHS product for packing code suffix "G" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .110(2.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .083(2.10) MIL-STD-19500 /228 0.012(0.3) Typ. .006(0.15)MIN. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .080(2.04) .070(1.78) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM Maximum Recurrent Peak Reverse Voltage .003(0.08) 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range -55 to +125 TSTG CHARACTERISTICS VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 40 120 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ .020(0.50) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT .012(0.30) Rated DC Blocking Voltage 1.0 30 .055(1.40) .035(0.89) .008(0.20) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.50 0.70 0.85 0.5 IR Dimensions in inches and (millimeters) 0.9 0.92 Volts 10 mAmp 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Package outline SOD-123H • Low profile surface mounted application in order to optimize boardInformation: space. Ordering 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (1) capability. • High surgePart Number G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Ultra high-speed switching. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phasechanges. WILLAS or anyone on its behalf assumes no responsibility or liability half wave, 60Hz, resistive of inductive load. load, derate current by 20% For capacitive for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Codecontained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCand do vary in different applications and actual performance may vary over time. Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward use of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 WILLAS products are not designed, intended or authorized for use in medical, Typical Junction Capacitance (Note 1) CJ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -55 to +125 -55 to +150 TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range Storage Temperature Range 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.