WILLAS FM120-M+ SE3407 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. high-speed switching. • Ultra P-Channel Enhancement Mode Field Effect Transistor • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) SOT-23 MIL-STD-19500 /228 General •Description RoHS product for packing code suffix "G" Halogen product for trench packing code suffix "H" to provide excellent The SE3407 usesfree advanced technology Mechanical data RDS(on) with low gate charge. This device is suitable for use as a load • Epoxy : UL94-V0 rated flame retardant switch or in PWM applications. • Case : Molded plastic, SOD-123H , Pb-Free package is :Plated available • Terminals terminals, solderable per MIL-STD-750 Method 2026suffix ”G” RoHS product for packing code • Polarity : Indicated by cathode band Halogen free product for packing code suffix “H” • Mounting Position : Any • Weight : Approximated 0.011 gram 1. GATE 0.040(1.0) 0.024(0.6) 2. SOURCE 3. DRAIN 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Marking Code Maximum Recurrent Peak Reverse Voltage MARKING: 3407 Maximum RMS Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave 1.0 30 unless otherwise noted) Maximum ratings (Ta=25℃ superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Parameter Operating Temperature Range Drain-Source VoltageRange Storage Temperature CJ TJ TSTG Gate-Source Voltage CHARACTERISTICS Continuous Drain Current Maximum Forward Voltage at 1.0A DC Power Dissipation Maximum Average Reverse Current at @T A=25℃ Thermal Resistance from Junction to@T Ambient A=125℃ Rated DC Blocking Voltage RΘJA Symbol VDS -55 to +125 VGS Value -30 40 120 Unit -55 to +150 V - 65 to +175 ±20 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF IR ID PD 0.50 -4.1 0.70 350 0.85 0.5 A mW 357 Junction Temperature TJ 150 ℃ Storage Temperature 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Tstg -55~+150 ℃ NOTES: 10 0.92 ℃/W RθJA 0.9 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SE3407 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to board space.(Ta=25℃ unless otherwise noted) Electricaloptimize characteristics • Low power loss, high efficiency. current capability, low forward voltage drop. Test Condition • High Parameter Symbol • High surge capability. Static characteristics • Guardring for overvoltage protection. high-speed switching. • Ultra Drain-source breakdown voltage BVDSS VGS = 0V, ID =-250µA • Silicon epitaxial planar chip, metal silicon junction. Zero gate•voltage drain current IDSSstandards VDS =-24V,V GS = 0V Lead-free parts meet environmental of 0.146(3.7) 0.130(3.3) Min Typ RDS(on) 0.071(1.8) 0.056(1.4) V VGS =-4.5V, ID = -3A VSD -1 Ciss VDS =-15V,VGS =0V,f =1MHz Coss Ratings atCharacteristics 25℃ ambient temperature Switching (note 2) unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Turn-on delay time td(on) For capacitive load, derate current by 20% tr RATINGS Markingdelay Code time Turn-off Turn-off fall time Maximum RMS Voltage tf Notes: Maximum DC Blocking Voltage These parameters have no way to verify. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RL=3.6Ω,R 12 GEN=3Ω 13 -3 0.031(0.8) Typ. -1 V V 700 pF 120 pF 75 pF 8.6 ns 30 14 40 15 50 16 28.2 18 60 80 10 ns 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 CJ Operating Temperature Range TJ 13.5 ns 1.0 30 IFSM Typical Junction Capacitance (Note 1) Storage Temperature Range mΩ 0.040(1.0) 0.024(0.6) 20 RΘJA Typical Thermal Resistance (Note 2) mΩ VRRM 1. Maximum Pulse test: Pulse widthRectified ≤300µs, duty cycle ≤2%.IO Average Forward Current 2. 60 5.0FM180-MH FM1100-MH ns FM1150-MH FM1200-M VGS=-10V,V =-15V, FM140-MH FM150-MH FM160-MH DSFM130-MH SYMBOL FM120-MH td(off) Maximum Recurrent Peak Reverse Voltage nA Dimensions in inches and (millimeters) Reverse transfer capacitance Crss ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS AND Turn-on rise time ±100 S IS=-1A,VGS=0V • Weight : Approximated 0.011 gram Output capacitance µA 5.5 0.031(0.8) Typ. Polarity : Indicated by 2) cathode band Dynamic•characteristics (note • Mounting Position : Any Input capacitance -1 87 • Epoxy : UL94-V0 rated flame retardant Forward tranconductance (note 1) gFS VDS =-5V, ID =-4A • Case : Molded plastic, SOD-123H Gate threshold voltage VGS(th) VDS =VGS, ID =-250µA , • Terminals :Plated terminals, solderable per MIL-STD-750 Diode forward voltageMethod (note 1)2026 Units -30 MIL-STD-19500 /228 Gate-source leakage current IGSS VGS =±20V, VDS = 0V • RoHS product for packing code suffix "G" VGS =-10V, ID = -4.1A Halogen free product for packing code suffix "H" Drain-source on-resistance (note Mechanical data1) 0.012(0.3) Typ. Max 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.5 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3407 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ Typical Characteristics Package outline SOD-123+ PACKAGE Features excellent power dissipation offers • Batch process Outputdesign, Characteristics -10 Ta=25℃ 0.012(0.3) Typ. (A) -3 -2 -5 Mechanical data -0 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H -1 -2 -3 -4 -5 , • Terminals terminals, per MIL-STD-750 DRAIN:Plated TO SOURCE VOLTAGE solderable V (V) -0 0.146(3.7) 0.130(3.3) -4 ID ID -15 DRAIN CURRENT (A) -20 Transfer Characteristics SOD-123H -5 DRAIN CURRENT better reverse leakage current and thermal resistance. V•GSLow =-10Vprofile surface mounted application in order to VGS=-4.5V optimize board space. -8V -5V power loss, high efficiency. • Low • High current capability, low forward voltage VGS=-4Vdrop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. VGS=-3.5V junction. • Silicon epitaxial planar chip, metal silicon • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" -25 0.071(1.8) 0.056(1.4) -1 0.040(1.0) 0.024(0.6) -0 0.031(0.8) Typ. -1 -0 -2 DS 0.031(0.8) Typ. -4 -3 GATE TO SOURCE VOLTAGE VGS (V) Method 2026 100 • Polarity : Indicated by cathode band RDS(ON) : Any —— ID • Mounting Position • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) RDS(ON) —— VGS 140 Ta=25℃ Ta=25℃ Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 VGS=-10V 40 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave 20 -0 -2 -4 -6 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) ID -8 (A) Ta=25℃ CHARACTERISTICS 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 20 -2 -4 -6 1.0 30 GATE TO SOURCE VOLTAGE 40 120 -55 to +125 -8 VGS -10 (V) -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Average Reverse Current at @T A=25℃ (A) 60 15 16 I =-4.3A 50 D 60 TSTG -1 Maximum Forward Voltage at 1.0A DC @T A=125℃ Rated -0.1 DC Blocking Voltage 14 40 TJ -10 -10 CJ VSD 13 30 40 RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range I —— Storage Temperature RangeS IO IFSM ON-RESISTANCE FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH 80 Marking Code DRAIN CURRENT 100 RDS(ON) RATINGS 60 ON-RESISTANCE RDS(ON) (mΩ) 80 Ratings at 25℃ ambient temperature unless otherwise specified. =-4.5V Single phase half wave, 60Hz, resistiveVof GS inductive load. For capacitive load, derate current by 20% (mΩ) 120 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.50 0.70 0.85 0.9 0.5 IR 0.92 10 IS SOURCE CURRENT NOTES: 1- -0.01 Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient -1E-3 -1E-4 -1E-5 -0.2 2012-06 2012-10 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD (V) -1.2 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M SE3407 THRU FM1200-M SOT-23 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOT-23 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Halogen free product for packing code suffix "H" .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) • Case : Molded plastic, SOD-123H .063(1.60) .047(1.20) Mechanical data • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. , 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 10 .008(0.20) 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 .003(0.08) 105 140 VDC 20 30 40 50 60 150 200 Marking Code .080(2.04) .070(1.78) Maximum DC Blocking Voltage IO Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range IFSM RΘJA Typical Thermal Resistance (Note 2) CHARACTERISTICS 100 80 100 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG .004(0.10)MAX. 80 1.0 30 @T A=125℃ IR NOTES: .020(0.50) 2- Thermal Resistance From Junction to Ambient .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 10 Dimensions in inches and (millimeters) 2012-06 2012-10 WILLAS ELECTRONIC Rev.D COR WILLAS ELECTRONIC CORP. SE3407 MOSFETS SOT-23 Plastic-Encapsulate Ordering Information: Device PN SE3407‐T(1)G(2)‐WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-10 WILLAS ELECTRONIC CORP.