PXT2222A(SOT 89)

WILLAS
FM120-M
PXT2222A THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
process design, excellent power dissipation offers
• Batch
TRANSISTOR
(NPN)
SOT-89SOD-123H
better reverse leakage current and thermal resistance.
FEATURES• Low profile surface mounted application in order to
board space.
z
Epitaxial optimize
planar die
construction
• Low power loss, high efficiency.
z
Moisture
Sensitivity
Levellow1 forward voltage drop.
current capability,
• High
High surge capability.
•
z
Pb-Free package is available
• Guardring for overvoltage protection.
RoHS product
for packing
code suffix ”G”
switching.
• Ultra high-speed
Silicon
epitaxial
planar
chip, metal
silicon
junction.
•
Halogen free product for packing
code
suffix
“H”
• Lead-free parts meet environmental standards of
MAXIMUM
Symbol
VCBO
MIL-STD-19500 /228
otherwise
RATINGS
(Tfor
a=25
℃ unless
packing
code suffix
"G"
• RoHS product
Halogen free product for packing code suffix "H"
Parameter
Mechanical
data
VEBO
IC
0.071(1.8)
0.056(1.4)
3. EMITTER
noted)
Value
PC
Collector
PositionDissipation
: Any
• MountingPower
Junction
• Weight :Temperature
Approximated 0.011 gram
TJ
0.012(0.3) Typ.
2. COLLECTOR
Unit
0.040(1.0)
0.024(0.6)
rated flame retardant
• Epoxy : UL94-V0Voltage
Collector-Base
75
V
• Case : Molded plastic, SOD-123H
Collector-Emitter Voltage
40
V,
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base
Voltage
6
V
Method
2026
Collector
Current
-Continuous
600
mA
• Polarity : Indicated by cathode band
VCEO
0.146(3.7)
0.130(3.3)
1. BASE
0.5
W
150
℃
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Storage Temperature
-55 ~150
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Tstg
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECTRICAL
CHARACTERISTICS
=25℃ unless
otherwise specified)
Single phase
half wave, 60Hz, resistive(T
ofainductive
load.
Parameter
For capacitive
load, derate current by 20%
Symbol
Test conditions
Min
Max
Collector-base breakdown
voltage
RATINGS
IC= 10μ A,I
75FM160-MH
V(BR)CBO
FM130-MH
SYMBOL FM120-MH
E=0 FM140-MH FM150-MH
Marking Code breakdown voltage
Collector-emitter
Maximum Recurrent Peak Reverse Voltage
V(BR)CEO
IC=1210mA, 13
IB=0
V(BR)EBO
IE=10μA, IC=0
Emitter-base breakdown voltage
VRRM
VRMS
Maximum RMS Voltage
30
14
40
15
50
40 16
60
18
80
10
100
14
21
28
35
42
56
70
40
50
ICBO
VDC
VCB
IE=0
20=60V, 30
Emitter
cut-off
current
Maximum
Average
Forward Rectified Current
IEBOIO
VEB= 5V , IC=0
6
VCE=10V, IC= 0.1mA
35
superimposed on rated load (JEDEC method)
VCE=10V, IC= 1mA
50
hFE(2)
115
150
120
200
105
100 μA 150
140
0.
8001
1.0
30
0. 01
μA
40
120
60
h Peak Forward Surge Current 8.3 ms single half sine-wave FE(1)
IFSM
VFM1150-MH FM1200FM180-MH FM1100-MH
20
Collector
cut-off
currentVoltage
Maximum
DC Blocking
RΘJA
hFE(3)
VCE=10V, IC= 10mA
75
Operating Temperature Range
hFE(4)
TJ
VCE=10V,
150mA
C=+125
-55Ito
100 Storage Temperature Range
hFE(5)
TSTG
VCE=1V, IC= 150mA
50 - 65 to +175
hFE(6)
VCE=10V, IC= 500mA
40
VCE(sat)
VF
IC=500mA, IB= 0.50
50mA
0.70
CJ
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Collector-emitter saturation voltage
Rated DC Blocking Voltage
NOTES:
IR
IC=150mA, IB=15mA
0.5
VBE(sat)
IC=500mA, IB=50mA
10
@T A=125℃
saturation voltage
VBE(sat)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Transition
frequency
2- Thermal
Resistance From Junction to Ambient
Output
Capacitance
V
300 -55 to +150
fT
IC=150mA, IB=15mA
0.6
VCE=10V, IC=20mA
f=100MHz
300
1 0.85
0.3
V 0.9
V
2.0
V
1.2
V
VCB=10V, IE= 0,f=1MHz
8
pF
Delay time
td
10
ns
Rise time
tr
VCC=30V, IC=150mA
VBE(off)=0.5V,IB1=15mA
25
ns
Storage time
tS
225
ns
Fall time
tf
2012-0
VCC=30V, IC=150mA
IB1=- IB2= 15mA
0.92
MHz
Cob
2012-06
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Average Reverse Current at @T A=25℃ VCE(sat)
Base-emitter
V
Typical Thermal Resistance (Note 2)
DC current
gain Capacitance (Note 1)
Typical Junction
Unit
60
ns
WILLAS
ELECTRONIC
COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
PXT2222A THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
Characteristic
design,
excellent power dissipation offers
•0.25Batch processStatic
0
2
4
6
8
10
hFE
DC CURRENT GAIN
100
0.071(1.8)
0.056(1.4)
12
14
16
1
10
100
COLLECTOR CURRENT
flame retardant
• Epoxy : UL94-V0 rated
VCEsat ——
IC
1200
1000
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
100
T =100 gram
℃
• Weight : Approximated 0.011
a
VBEsat ——
IC
600
(mA)
0.040(1.0)
0.024(0.6)
IC
0.031(0.8) Typ.
0.031(0.8) Typ.
900
TDimensions
=25℃
a
in inches and (millimeters)
600
Ta=100 ℃
T =25AND
℃
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
a
1
10
Marking Code
IC
(mA)
VRRM
12
20
Maximum RMS Voltage
——
VBE
20
Maximum Average Forward Rectified Current
IO
IFSM
T=
a 10
0℃
T =2
5℃
a
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction
Capacitance (Note 1)
1
Storage Temperature Range
600
100
14
40
15
16
fT —— IC
50
60
18
80
COMMON EMITTER
TSTG
VCE= 10V
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
1.0
30
100
40
120
-55 to +125
TJ
Operating Temperature Range
13
30
500
TRANSITION FREQUENCY
IC
COLLECTOR CURRENT
superimposed on rated load (JEDEC method)
10
fT
14
VDC
(mA)
VRMS
Maximum100DC Blocking Voltage
Peak Forward
Surge Current 8.3 ms single half sine-wave
10
1
(mA)
FM150-MHCURREMT
FM160-MHICFM180-MH
FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR
Maximum600Recurrent Peak Reverse Voltage
IC
β=10
300
600
100
COLLECTOR
RATINGSCURREMT
-55 to +150
COMMON EMITTER
VCE=10V
- 65 to +175
Ta=25℃
0.1
10
300
600
CHARACTERISTICS
BESE-EMMITER VOLTAGE
Maximum Forward Voltage at 1.0A DC
900
VBE (mV)
VCB
/VEB
/Cib ——
Maximum100Average ReverseCCurrent
at @T
A=25℃
ob
@T A=125℃
Rated DC Blocking Voltage
1200
VF
0.50
IR
(pF)
C
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
10
Cob
1
0.1
1
REVERSE VOLTAGE
10
V
(V)
100
0.70
PC
600
f=1MHz
IE=0/IC=0
Cib
2012-06
10
FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
COLLECTORFM160-MH
CURRENT FM180-MH
IC (mA)
Ta=25 ℃
NOTES:
1
COLLECTOR POWER DISSIPATION
PC (mW)
0
CAPACITANCE
0.012(0.3) Typ.
Ta=25℃
VCE (V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
β=10
For capacitive
load, derate current by 20%
10
2012-0
0.146(3.7)
0.130(3.3)
10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
COLLECTOR-EMITTER
Mechanical
data VOLTAGE
Ta=100℃
COMMON EMITTER
VCE= 10V
IB= 100uA
Halogen free product for packing code suffix "H"
0.00
SOD-123H
200uA
MIL-STD-19500 /228
IC
a
optimize board space.
0.20
• Low power loss, high efficiency. 800uA
700uA
drop.
• High current capability, low forward voltage
0.15
600uA
• High surge capability.
• Guardring for overvoltage protection. 500uA
•0.10Ultra high-speed switching.
400uA
• Silicon epitaxial planar chip, metal silicon junction.
300uA
of
•0.05Lead-free parts meet environmental standards
• RoHS product for packing code suffix "G"
——
EMITTER
profile surface mounted application in order to
• Low
T =25℃
900uA
(MHz)
COLLECTOR CURRENT
IC
(A)
better
reverse leakage current and
thermal resistance.
COMMON
1mA
hFE
1000
20
——
0.9
0.85
Ta
0.5
0.92
10
500
400
300
200
100
0
0
25
50
75
WILLAS
ELECTRONIC CO
T (℃ )
AMBIENT TEMPERATURE
100
125
150
a
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
PXT2222A THRU
FM1200-M
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing
code suffix "H"
Mechanical data .173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals,.061REF
solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.154(3.91)
Marking Code
12
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
.023(0.58)
20
VRRM
.016(0.40)
14
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.102(2.60)
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH
.091(2.30)
.060TYP
(1.50)TYP
TSTG
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
.197(0.52)
.013(0.32)
- 65 to +175
.017(0.44)
.014(0.35)
FM180-MH FM1100-MH FM1150-MH FM1200-M
CHARACTERISTICS .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
0.9
Maximum Forward Voltage at 1.0A DC (3.0)TYP
0.92
VF
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.
WILLAS
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM120-M
PXT2222ATHRU
FM1200-M
Pb Free Produ
SOD-123+ PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Ordering
Information: • Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
capability, low forward voltage drop.
• High current
Device PN Packing • High surge capability. (1) (2)
PXT2222A –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
CASE:SOT‐89 high-speed switching.
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Marking
Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Maximum
Average
Forward
Rectified
Current
I
O
1.0
and do vary in different applications and actual performance may vary over time. Peak WILLAS does not assume any liability arising out of the application or Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
use of any product or circuit. 40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical
CJ
Junction Capacitance (Note 1)
-55
to
+125
-55 to +150
Operating Temperature Range
TJ
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
applications where a failure or malfunction of component or circuitry may directly 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum
Average Reverse Current at @T A=25℃
or indirectly cause injury or threaten a life without expressed written approval IR
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.