WILLAS FM120-M PXT2222A THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch TRANSISTOR (NPN) SOT-89SOD-123H better reverse leakage current and thermal resistance. FEATURES• Low profile surface mounted application in order to board space. z Epitaxial optimize planar die construction • Low power loss, high efficiency. z Moisture Sensitivity Levellow1 forward voltage drop. current capability, • High High surge capability. • z Pb-Free package is available • Guardring for overvoltage protection. RoHS product for packing code suffix ”G” switching. • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. • Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MAXIMUM Symbol VCBO MIL-STD-19500 /228 otherwise RATINGS (Tfor a=25 ℃ unless packing code suffix "G" • RoHS product Halogen free product for packing code suffix "H" Parameter Mechanical data VEBO IC 0.071(1.8) 0.056(1.4) 3. EMITTER noted) Value PC Collector PositionDissipation : Any • MountingPower Junction • Weight :Temperature Approximated 0.011 gram TJ 0.012(0.3) Typ. 2. COLLECTOR Unit 0.040(1.0) 0.024(0.6) rated flame retardant • Epoxy : UL94-V0Voltage Collector-Base 75 V • Case : Molded plastic, SOD-123H Collector-Emitter Voltage 40 V, • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter-Base Voltage 6 V Method 2026 Collector Current -Continuous 600 mA • Polarity : Indicated by cathode band VCEO 0.146(3.7) 0.130(3.3) 1. BASE 0.5 W 150 ℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) Storage Temperature -55 ~150 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Tstg Ratings at 25℃ ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS =25℃ unless otherwise specified) Single phase half wave, 60Hz, resistive(T ofainductive load. Parameter For capacitive load, derate current by 20% Symbol Test conditions Min Max Collector-base breakdown voltage RATINGS IC= 10μ A,I 75FM160-MH V(BR)CBO FM130-MH SYMBOL FM120-MH E=0 FM140-MH FM150-MH Marking Code breakdown voltage Collector-emitter Maximum Recurrent Peak Reverse Voltage V(BR)CEO IC=1210mA, 13 IB=0 V(BR)EBO IE=10μA, IC=0 Emitter-base breakdown voltage VRRM VRMS Maximum RMS Voltage 30 14 40 15 50 40 16 60 18 80 10 100 14 21 28 35 42 56 70 40 50 ICBO VDC VCB IE=0 20=60V, 30 Emitter cut-off current Maximum Average Forward Rectified Current IEBOIO VEB= 5V , IC=0 6 VCE=10V, IC= 0.1mA 35 superimposed on rated load (JEDEC method) VCE=10V, IC= 1mA 50 hFE(2) 115 150 120 200 105 100 μA 150 140 0. 8001 1.0 30 0. 01 μA 40 120 60 h Peak Forward Surge Current 8.3 ms single half sine-wave FE(1) IFSM VFM1150-MH FM1200FM180-MH FM1100-MH 20 Collector cut-off currentVoltage Maximum DC Blocking RΘJA hFE(3) VCE=10V, IC= 10mA 75 Operating Temperature Range hFE(4) TJ VCE=10V, 150mA C=+125 -55Ito 100 Storage Temperature Range hFE(5) TSTG VCE=1V, IC= 150mA 50 - 65 to +175 hFE(6) VCE=10V, IC= 500mA 40 VCE(sat) VF IC=500mA, IB= 0.50 50mA 0.70 CJ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Collector-emitter saturation voltage Rated DC Blocking Voltage NOTES: IR IC=150mA, IB=15mA 0.5 VBE(sat) IC=500mA, IB=50mA 10 @T A=125℃ saturation voltage VBE(sat) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Transition frequency 2- Thermal Resistance From Junction to Ambient Output Capacitance V 300 -55 to +150 fT IC=150mA, IB=15mA 0.6 VCE=10V, IC=20mA f=100MHz 300 1 0.85 0.3 V 0.9 V 2.0 V 1.2 V VCB=10V, IE= 0,f=1MHz 8 pF Delay time td 10 ns Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 ns Storage time tS 225 ns Fall time tf 2012-0 VCC=30V, IC=150mA IB1=- IB2= 15mA 0.92 MHz Cob 2012-06 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M Maximum Average Reverse Current at @T A=25℃ VCE(sat) Base-emitter V Typical Thermal Resistance (Note 2) DC current gain Capacitance (Note 1) Typical Junction Unit 60 ns WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M PXT2222A THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Typical Characteristics Package outline Features Characteristic design, excellent power dissipation offers •0.25Batch processStatic 0 2 4 6 8 10 hFE DC CURRENT GAIN 100 0.071(1.8) 0.056(1.4) 12 14 16 1 10 100 COLLECTOR CURRENT flame retardant • Epoxy : UL94-V0 rated VCEsat —— IC 1200 1000 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any 100 T =100 gram ℃ • Weight : Approximated 0.011 a VBEsat —— IC 600 (mA) 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. 900 TDimensions =25℃ a in inches and (millimeters) 600 Ta=100 ℃ T =25AND ℃ MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS a 1 10 Marking Code IC (mA) VRRM 12 20 Maximum RMS Voltage —— VBE 20 Maximum Average Forward Rectified Current IO IFSM T= a 10 0℃ T =2 5℃ a RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) 1 Storage Temperature Range 600 100 14 40 15 16 fT —— IC 50 60 18 80 COMMON EMITTER TSTG VCE= 10V 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 100 40 120 -55 to +125 TJ Operating Temperature Range 13 30 500 TRANSITION FREQUENCY IC COLLECTOR CURRENT superimposed on rated load (JEDEC method) 10 fT 14 VDC (mA) VRMS Maximum100DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave 10 1 (mA) FM150-MHCURREMT FM160-MHICFM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR Maximum600Recurrent Peak Reverse Voltage IC β=10 300 600 100 COLLECTOR RATINGSCURREMT -55 to +150 COMMON EMITTER VCE=10V - 65 to +175 Ta=25℃ 0.1 10 300 600 CHARACTERISTICS BESE-EMMITER VOLTAGE Maximum Forward Voltage at 1.0A DC 900 VBE (mV) VCB /VEB /Cib —— Maximum100Average ReverseCCurrent at @T A=25℃ ob @T A=125℃ Rated DC Blocking Voltage 1200 VF 0.50 IR (pF) C 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 10 Cob 1 0.1 1 REVERSE VOLTAGE 10 V (V) 100 0.70 PC 600 f=1MHz IE=0/IC=0 Cib 2012-06 10 FM1100-MH FM1150-MH FM1200-M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH COLLECTORFM160-MH CURRENT FM180-MH IC (mA) Ta=25 ℃ NOTES: 1 COLLECTOR POWER DISSIPATION PC (mW) 0 CAPACITANCE 0.012(0.3) Typ. Ta=25℃ VCE (V) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. β=10 For capacitive load, derate current by 20% 10 2012-0 0.146(3.7) 0.130(3.3) 10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR-EMITTER Mechanical data VOLTAGE Ta=100℃ COMMON EMITTER VCE= 10V IB= 100uA Halogen free product for packing code suffix "H" 0.00 SOD-123H 200uA MIL-STD-19500 /228 IC a optimize board space. 0.20 • Low power loss, high efficiency. 800uA 700uA drop. • High current capability, low forward voltage 0.15 600uA • High surge capability. • Guardring for overvoltage protection. 500uA •0.10Ultra high-speed switching. 400uA • Silicon epitaxial planar chip, metal silicon junction. 300uA of •0.05Lead-free parts meet environmental standards • RoHS product for packing code suffix "G" —— EMITTER profile surface mounted application in order to • Low T =25℃ 900uA (MHz) COLLECTOR CURRENT IC (A) better reverse leakage current and thermal resistance. COMMON 1mA hFE 1000 20 —— 0.9 0.85 Ta 0.5 0.92 10 500 400 300 200 100 0 0 25 50 75 WILLAS ELECTRONIC CO T (℃ ) AMBIENT TEMPERATURE 100 125 150 a WILLAS ELECTRONIC CORP. WILLAS FM120-M PXT2222A THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals,.061REF solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) RATINGS .154(3.91) Marking Code 12 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage .023(0.58) 20 VRRM .016(0.40) 14 VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .102(2.60) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200SYMBOL FM120-MH FM130-MH .091(2.30) .060TYP (1.50)TYP TSTG 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 .197(0.52) .013(0.32) - 65 to +175 .017(0.44) .014(0.35) FM180-MH FM1100-MH FM1150-MH FM1200-M CHARACTERISTICS .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH 0.9 Maximum Forward Voltage at 1.0A DC (3.0)TYP 0.92 VF 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CO WILLAS ELECTRONIC CORP. WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M PXT2222ATHRU FM1200-M Pb Free Produ SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) capability, low forward voltage drop. • High current Device PN Packing • High surge capability. (1) (2) PXT2222A –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) CASE:SOT‐89 high-speed switching. • Ultra • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M RATINGS Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM contained are intended to provide a product description only. "Typical" parameters 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current I O 1.0 and do vary in different applications and actual performance may vary over time. Peak WILLAS does not assume any liability arising out of the application or Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical CJ Junction Capacitance (Note 1) -55 to +125 -55 to +150 Operating Temperature Range TJ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M applications where a failure or malfunction of component or circuitry may directly 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ or indirectly cause injury or threaten a life without expressed written approval IR 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP.