WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H NPN Silicon surface mounted application in order to • Low profile optimize board space. • Low power loss, high efficiency. FEATURE • High current capability, low forward voltage drop. • High surge capability. ƽComplementary to 9015. • Guardring for overvoltage protection. ƽ• We declare that the material of product compliance with RoHS requirements. Ultra high-speed switching. Pb-Free package is chip, metal silicon junction. • Silicon epitaxial planaravailable Lead-free partsfor meet environmental standards of • RoHS product packing code suffix ”G” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" SOT– 23 Moisture Sensitivity 1 code suffix "H" Halogen free product forLevel packing Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant DEVICE MARKING AND ORDERING INFORMATION • Case : Molded plastic, SOD-123H Device :Plated terminals, Marking Shipping , • Terminals solderable per MIL-STD-750 9014QLT1 Method 2026 14Q 0.031(0.8) Typ. 3 3000/Tape&Reel • Polarity : Indicated by cathode band 9014RLT1 14R • Mounting Position : Any 9014SLT1 14S • Weight : Approximated 0.011 gram 9014TLT1 COLLECTOR 0.031(0.8) Typ. Dimensions in inches and (millimeters) 1 3000/Tape&Reel BASE 2 EMITTER 3000/Tape&Reel 14T 3000/Tape&Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. SingleMAXIMUM phase half wave,RATINGS 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Rating SYMBOLValue FM120-MH FM130-MH Symbol UnitFM140-MH FM150-MH FM160-MH Marking Code VRRM 13 V 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Collector-Base Maximum RMS Voltage Voltage VCBO VRMS 5014 21 V 28 35 42 56 70 105 140 Maximum DC Blocking Voltage Emitter-Base Voltage VEBO VDC 520 30 V 40 50 60 80 100 150 200 Collector-Emitter Voltage Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Rectified Current Collector current-continuoun VCEO IO IC IFSM Peak Forward Surge Current 8.3 ms single half sine-wave THERMAL CHARATEERISTICS superimposed on rated load (JEDEC method) 100 CJ Typical Junction Capacitance (Note 1) Characteristic Total Device Dissipation FR-5 Board, (1) TJ Operating Temperature Range Storage Temperature Range TSTG o Symbol PD TA=25 C CHARACTERISTICS o -55 to +125 Rated DC Blocking Voltage Total Device Dissipation @T A=125℃ IR 0.50 R©JA Unit -55 to +150 mW 556 mW/ C o 0.70 C/W Substrate, (2) TA=25 oC Derate above 25oC 2- Thermal Resistance From Junction to Ambient 0.85 0.9 0.92 0.5 10 PD 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 300 mW 2.4 mW/oC Thermal Resistance, Junction to Ambient R©JA 417 Junction and Storage Temperature TJ ,Tstg -55 to +150 2012-06 40 120 - 65 to +175 1.8 VF Thermal Junction Ambient Maximum AverageResistance, Reverse Current at @Tto A=25℃ 2012- Max FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH o Maximum Forward Voltage at 1.0A DC NOTES:Alumina mA 225 Derate above 25 C 1.0 30 RΘJA Typical Thermal Resistance (Note 2) FM180-MH FM1100-MH FM1150-MH FM1200-MH 12 45 20 o C/W o C WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H to • Low profile surface mounted application in order o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) optimize board space. • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. OFF CHARACTERISTICS • High surge capability. for overvoltage protection. • GuardringCharacteristic Symbol • Ultra high-speed switching. Collector-Emitter Voltage V(BR)CEO epitaxial planar chip, metal silicon junction. • SiliconBreakdown Lead-free parts meet environmental standards of • (I =1.0mA) C 0.012(0.3) Typ. Min Typ Max Unit 45 - - V V(BR)EBO 5 - - V(BR)CBO 50 - - 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 product for packing code suffix "G" • RoHS Emitter-Base Breakdown Voltage V Halogen free product for packing code suffix "H" (IE=100A) Mechanical data Collector-Base Breakdown : UL94-V0Voltage rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H (IC=100A) • Terminals :Plated terminals, solderable per MIL-STD-750 I Collector Cutoff Current (V =40V) CB Emitter Cutoff Current (VEB=3V) • Polarity : Indicated by cathode band V 0.031(0.8) Typ. , - CBO Method 2026 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. - IEBO 100 nA 100 nA Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram ON CHARACTERISTICS DC Current Gain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (IC=1mA, VCE Ratings at =5V) 25℃ ambient temperature unless otherwise specified.HFE 150 - 1000 - - 0.3 Single phase half wave, 60Hz, resistive of inductive load. Collector-Emitter Saturation Voltage For capacitive load, derate current by 20% (IC =100mA,IB=5mA) VCE RATINGS Marking Code VRRM R Maximum Recurrent Peak NOTE: * Reverse Voltage Q Maximum RMS Voltage HFE Maximum DC Blocking Voltage V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH 150~300 VRMS 200~400 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VDC Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 14 21 20 30 300~600 14 T40 15 50 16 60 18 80 10 100 115 150 120 200 28 35 42 56 70 105 140 40 50 60 80 100 150 200 400~1000 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 12 20 S 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. STATIC CHARACTERISTIC current capability, low forward voltage drop. • High • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. DC CURRENT GAIN 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) BASE-EMITTER SATURATION VOLTAGE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS CURRENT GAIN-BANDWIDTH PRODUCT COLLECTOR-EMITTER SATURATION VOLTAGE Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 9014xLT1 THRU FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .122(3.10) of • Lead-free parts meet environmental standards .106(2.70) Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Mechanical data .110(2.80) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .008(0.20) .080(2.04) .070(1.78) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .003(0.08) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum Average Forward Rectified Current IO IFSM .004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .020(0.50) TSTG .012(0.30) Storage Temperature Range CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 40 120 -55 to +125 -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC 1.0 30 .055(1.40) .035(0.89) .083(2.10) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 Dimensions in inches and (millimeters) 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 9014xLT1 THRU FM1200-M+ Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (2) (1) 9014 x LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel capability. • High surge Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, • Silicon (2) CLASSIFICATION OF h FE metal RANK silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM which may be included on WILLAS data sheets and/ or specifications can 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM superimposed on rated load (JEDEC method) 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ life‐saving implant or other applications intended for life‐sustaining or other related 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH or indirectly cause injury or threaten a life without expressed written approval 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.