WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR (NPN) process design, excellent power dissipation offers • Batch FEATURESbetter reverse leakage current and thermal resistance. • Low profile surface mounted application in order to z Lowoptimize VCE(sat)board .VCE(sat) =0.16V(Typ.)(IC/IB=2A/0.2A) space. loss, high efficiency. • Low power z Pb-Free package is available • High current capability, low forward voltage drop. RoHS for packing code suffix ”G” surge capability. • Highproduct Guardring for overvoltage protection. • Halogen free product for packing code suffix “H” • Ultra high-speed switching. z Moisture Sensitivity 1 silicon junction. planar Level chip, metal • Silicon epitaxial • Lead-free parts meet environmental standards of MAXIMUM RATINGS (Ta=25 MIL-STD-19500 /228℃ unless otherwise noted) RoHS product for packing code suffix "G" • Symbol Parameter Value Unit SOT-89 SOD-123H 0.146(3.7) 0.130(3.3) 1. BASE 0.012(0.3) Typ. 2. COLLECTOR 0.071(1.8) 0.056(1.4) 3. EMITTER Halogen free product for packing code suffix "H" VCBO Collector-Base Voltage Mechanical data VCEO Epoxy : UL94-V0 rated flame retardant 32 • Collector-Emitter V Voltage Case : MoldedVoltage plastic, SOD-123H • Emitter-Base 5 V , • Terminals :Plated terminals, solderable per MIL-STD-750 VEBO IC 40 Collector Current -Continuous 2 Method 2026 PC 500 • Collector Polarity : dissipation Indicated by cathode band 150 MountingTemperature Position : Any • Junction • Storage Weight :Temperature Approximated 0.011 gram -55-150 TJ Tstg V 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. A mW Dimensions in inches and (millimeters) ℃ ℃ MAXIMUM RATINGS(TAND ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS a=25℃ unless otherwise specified) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Parameter Symbol For capacitive load, derate current by 20% Test conditions Min RATINGS Collector-base breakdown voltage FM140-MH FM150-MH FM160-MH SYMBOL FM120-MHIEFM130-MH IC=50μA, =0 40 V(BR)CBO Maximum Recurrent Peak Reverse Voltage Collector-emitter breakdown voltage V(BR)CEO VRRM Marking Code 15 50 18 80 42 56 70 105 140 60 5 80 100 V 150 200 ICBO IO VCB=20V, IE=0 1.0 30 superimposed on rated load (JEDEC method) hFE(1)RΘJA VCE=3V, IC=500mA CJ Typical Junction Capacitance (Note 1) 40 82 120 -55 to +125 VCE(sat)TJ IC=2A, IB=0.2A Operating Temperature Range voltage Collector-emitter saturation Storage Temperature Range μA 1 μA 390 V - 65 to +175 VCE=5V, IC=50mA, f=100MHz fT CHARACTERISTICS 1 -55 to +150 0.8 TSTG Transition frequency 100 MHz SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Maximum Forward Voltage at 1.0A DC Collector output capacitance 0.50 Cob VF VCB=10V, IE=0, f=1MHz Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltagePof 4.0 VDC. Rank 0.70 0.9 pF 300.85 0.5 IR 0.92 10 Q R 82-180 120-270 180-390 DBP DBQ DBR 2- Thermal Resistance From Junction to Ambient 2012-0 120 200 35 Thermal DC Typical current gain Resistance (Note 2) 2012-06 115 150 V 50 Peak Forward Surge Current 8.3 ms single half sine-wave IEBO IFSM VEB=4V, IC=0 Emitter cut-off current Range Marking 10 100 28 Rated DC Blocking Voltage FM180-MH FM1100-MH FM1150-MH FM1200-MH V 16 6032 40 Maximum Average Forward Rectified Current Collector cut-off current CLASSIFICATION OF hFE(1) Unit 21 VRMS 14 14 40 Max V(BR)EBO 20 IC=030 VDC IE=50μA, Maximum RMS Voltage Emitter-base voltage Maximum DCbreakdown Blocking Voltage 12 13 20 IB=030 IC=1mA, Typ WILLAS ELECTRONIC COR WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SD1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Typical Characteristics Features Static Characteristic 700 process design, excellent power dissipation offers • Batch COMMON Package outline h —— I FE 1000 EMITTER better reverse leakage current and thermal resistance. T =25℃ profile surface mounted application in order to • Low 2.0mA 600 IC COLLECTOR CURRENT MIL-STD-19500 /228 COLLECTOR-EMITTER VOLTAGE Mechanical data COMMON EMITTER VCE= 3V 10 5 1 10 100 • Polarity : Indicated by cathode band • Mounting Position : Any T =100 ℃ • Weight : Approximated 0.011 gram 400 600 a COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) a VCEsat β=10 IC —— 2000 (mA) 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. Ta=100 ℃ 100 Dimensions in inches and (millimeters) Ta=25℃ 10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 200 IC RATINGS VBE —— Marking Code 12 20 =3V Maximum RMSVCE Voltage VRMS 14 VDC 20 (mA) COMMON EMITTER Maximum DC Blocking Voltage 100 T =2 5℃ a T =1 00℃ a IC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) 1 Storage Temperature Range 14 40 IC (mA) 21 30 15 fT —— 16 IC 50 60 COMMON EMITTER VCE=5V28 35 Ta=25℃ 40 42 50 60 18 80 10 100 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 100 40 120 -55 to +150 - 65 to +175 TSTG 10 0.6 0.9 Maximum Forward Voltage at 1.0A DC C /C —— 1.2 VF V /V ob ib CB EB Maximum 1000 Average Reverse Current at @T A=25℃ 0.70 PC —— (pF) C 2- Thermal Resistance From JunctionCto Ambient ob 10 10 V (V) 0.92 400 200 0 1 0.9 0.85 T a 0.5 10 Ta=25 ℃ 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 100 REVERSE VOLTAGE 100 40 600 f=1MHz IE=0/IC=0 Cib NOTES: 10 0.50 IR @T A=125℃ Rated DC Blocking Voltage 5 (mA) FM150-MHCURRENT FM160-MHICFM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MHCOLLECTOR VBE (V) COLLECTOR POWER DISSIPATION PC (mW) 0.3 BASE-EMMITER VOLTAGE CHARACTERISTICS 1 0.1 1000 2000 100 -55 to +125 TJ Operating Temperature Range 13 30 1000 TRANSITION FREQUENCY IO Maximum Average Forward Rectified Current 2012-06 10 fT VRRM 2000 0.1 0.0 1 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH IC Maximum Recurrent Peak Reverse Voltage 1000 10 1 0.1 COLLECTOR CURREMT (mA) (MHz) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Method 2026 T =25℃ COLLECTOR CURREMT COLLECTOR CURRENT 1000 COLLECTOR CURRENT VCE (V) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 0 For capacitive load, derate current 0.1 1 10 by 20% 100 1000 2000 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) VBEsat —— rated flameIC retardant • Epoxy : UL94-V0 300 β=10 : Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 800 CAPACITANCE 0.146(3.7) 0.130(3.3) 100 1000 2012-0 Ta=25℃ IB=0.2mA 0 1 3 4 Halogen free product2 for packing code suffix "H" SOD-123H hFE 1.8mA DC CURRENT GAIN (mA) optimize board space. • Low power loss, high efficiency. 1.6mA drop. • High current capability, low forward voltage 400 1.4mA • High surge capability. 1.2mA 300 • Guardring for overvoltage protection. 1.0mA • Ultra high-speed switching. 0.8mA 200 • Silicon epitaxial planar chip, metal silicon 0.6mAjunction. 0.4mA of • Lead-free parts meet environmental standards 100 •0RoHS product for packing code suffix "G" Ta=100℃ a 500 C 30 0 25 50 75 WILLAS ELECTRONIC COR T (℃ ) AMBIENT TEMPERATURE 100 125 150 a WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SD1766 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Outline Drawing SOT-89 • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .061REF • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH .091(2.30) RATINGS .154(3.91) Marking Code 12 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 .023(0.58) 20 .016(0.40) Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage Maximum DC Blocking Voltage IO Maximum Average Forward Rectified Current .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC IFSM RΘJA Typical Thermal Resistance (Note 2) TJ TSTG .197(0.52) .013(0.32) 40 120 -55 to +125 -55 to +150 - 65 to +175 .017(0.44) .014(0.35) .118TYP SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (3.0)TYPVF 0.9 0.92 0.50 0.70 0.85 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 1.0 30 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ 2SD1766 THRU FM1200-M+ Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Packing capability, low forward voltage drop. • High currentDevice PN (3) High surge capability. • 2SD1766 x –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) high-speed switching. • Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of /228 MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. Singlespecification herein, to make corrections, modifications, enhancements or other phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS Markingfor any errors or inaccuracies. Data sheet specifications and its information Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage VRRM contained are intended to provide a product description only. "Typical" parameters 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current I O 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave WILLAS does not assume any liability arising out of the application or 30 IFSM superimposed on rated load (JEDEC method) use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 TJ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Operating Temperature Range Storage Temperature Range -55 to +150 TSTG life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH applications where a failure or malfunction of component or circuitry may directly 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 or indirectly cause injury or threaten a life without expressed written approval Maximum Average Reverse Current at @T A=25℃ IR 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures . 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.