MMBD4148(SOT 23)

WILLAS
FM120-M+
MMBD4148THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
process design, excellent power dissipation offers
• Batch DIODE
SWITCHING
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
optimize board space.
z
Fast
Switching Speed
• Low power loss, high efficiency.
z
Purposelow
Switching
Applications
HighGeneral
current capability,
forward voltage
drop.
•For
High
surge
capability.
•
z
High Conductance
• Guardring for overvoltage protection.
z
Pb-Free package is available
• Ultra high-speed switching.
for packing
code
suffix
”G”
Silicon product
epitaxial planar
chip, metal
silicon
junction.
•RoHS
Lead-free parts meet environmental standards of
•Halogen
free product for packing code suffix “H”
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
MIL-STD-19500 /228
z
Sensitivity
Level
RoHS product
for packing
code 1
suffix "G"
•Moisture
2
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
MARKING:
KA2 :Plated terminals, solderable per MIL-STD-750 ,
• Terminals
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Position : Any
• MountingParameter
Symbol
Limit
Unit
• Weight :Peak
Approximated
gram
Non-Repetitive
Reverse0.011
Voltage
VRM
100
V
MAXIMUM
RATINGS
CHARACTERISTICS
VRRM
Peak Repetitive
Peak Reverse
VoltageAND ELECTRICAL
Working
Peak
Reverse
Voltage
V
75
Ratings at 25℃ ambient temperature unless otherwise specified.
RWM
DC
Blocking
Voltage
V
Single phase half wave, 60Hz, resistive of inductive load. R
For capacitive load, derate current by 20%
RMS Reverse Voltage
VR(RMS)
RATINGS
IFM
V
13
30
300
14
40
150
15
50
16
60
18
80
mA10
115
150
120
200
Vo
Maximum Recurrent
Peak
Reverse
Voltage
Average
Rectified
Output
Current
VRRMIO
12
20
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Vo
I
20
30
40
1.0
50
60
80
A100
150
200
Vo
Peak Forward Surge Current @t=1.0μs
Maximum DC Blocking Voltage
@ t=1.0s
VDC FSM
Maximum Average Forward Rectified Current
Power Dissipation
Peak Forward
Surge CurrentJunction
8.3 ms single
sine-wave
Thermal
Resistance
tohalf
Ambient
superimposed on rated load (JEDEC method)
Junction Temperature
CHARACTERISTICS
Symbol
SYMBOL
F
VV(BR)
Maximum Forward
Voltagevoltage
at 1.0A DC
Reverse
breakdown
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
voltage
2- Thermal Resistance From Junction to Ambient
Capacitance between terminals
Reverse recovery time
2012-06
2012-12
- 55~+150
℃/W
Am
℃
℃/
℃
P
-55 to +150
℃
- 65 to +175
℃
Min FM130-MH
Typ FM140-MH
Max FM150-MH
Unit FM160-MH FM180-MH
Conditions
FM120-MH
FM1100-MH FM1150-MH FM1200-MH UN
75
0.50
0.70
V
0.85
IR=100μA
0.5
0.715
V
IF=1mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=50mA
VF4
1.25
V
IF=150mA
IR1
2.5
μA
VR=75V
IR2
25
nA
VR=20V
CT
2
pF
VR=0V,f=1MHz
trr
Am
mW
VF1IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse current
40
120
TSTG
Parameter
Forward
NOTES:
150
-55 to +125
TJ
Operating Temperature Range
Rated DC Blocking Voltage
CJ TSTG
Electrical
Ratings
@Ta=25℃
Storage Temperature
Range
357
100
mA
1.0
30
350
Tj
2SHUDWLQJStorage
Temperature
Typical Junction Capacitance
(Note 1)
2.0
IO
Pd
IFSMRθJA
RΘJA
Typical Thermal Resistance (Note 2)
53
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Forward
Continuous Current
Marking Code
V
4
ns
0.9
0.92
Vo
10
mA
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD4148THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Typical Characteristics
• Low profile surface mounted application in order to
• Epoxy : UL94-V0 rated flame retardant
: Molded plastic, SOD-123H
• Case
1
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Ta=100℃
100
30
0.040(1.0)
0.024(0.6)
10
Ta=25℃
0.031(0.8) Typ.
Method 2026
0.3
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
(nA)
3
REVERSE CURRENT IR
Mechanical data
Characteristics
300
T=
a 2
5℃
•
0.146(3.7)
0.130(3.3)
Reverse
1000
30
MIL-STD-19500
/228
RoHS product for packing code suffix "G"
10
Halogen
free product for packing code suffix "H"
T=
a 1
00
℃
FORWARD CURRENT
IF
(mA)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
High surge capability.
• 300
• Guardring for overvoltage protection.
Ultra high-speed switching.
• 100
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.031(0.8) Typ.
3
• Polarity : Indicated by cathode band
0.1
Position
: Any
• Mounting
0.0
0.4
0.8
FORWARD
VOLTAGE
• Weight : Approximated 0.011
gramV
F
Dimensions in inches and (millimeters)
1.2
1
1.6
0
20
(V)
40
60
REVERSE VOLTAGE
VR
80
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.4
RATINGS
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Ta=25
℃
SYMBOL
FM120-MH
f=1MHz
Marking Code
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
1.2
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
1.1
Storage Temperature Range
1.0
0
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
1.0
30
200
at REVERSE
1.0A DC VOLTAGE
Am
Am
40
120
100
-55 to +125
℃/
P
-55 to +150
℃
- 65 to +175
℃
0
0
25
50
75
100
125
150
15
20
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL
VR
(V)
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
TSTG
5
10
CHARACTERISTICS
Maximum Forward Voltage
300
PD
CAPACITANCE BETWEEN TERMINALS
CT (pF)
1.3
(mW)
VRRM
Maximum Recurrent Peak Reverse Voltage
Power Derating Curve
400
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Capacitance
Characteristics
For capacitive load, derate
current by 20%
@T A=125℃
IR
0.50
AMBIENT TEMPERATURE
0.70
T
0.85a
0.5
(℃ )
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-12
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD4148THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
• Low profile surface mounted application in order to
SOT-23
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.122(3.10)
.106(2.70)
.063(1.60)
.047(1.20)
Mechanical data
0.012(0.3) Typ.
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
.080(2.04)
Maximum RMS Voltage
.070(1.78)
Maximum DC Blocking Voltage
VRRM
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage Temperature Range
CHARACTERISTICS
21
28
35
42
56
30
40
50
60
80
VF
@T A=125℃
IR
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
10
115
.008(0.20)
100
150
20
Maximum Average Reverse Current at @T A=25℃
NOTES:
18
80
70
105
.003(0.08)
100
150
120
200
Vo
140
Vo
200
Vo
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
16
60
TSTG
.004(0.10)MAX.
Rated DC Blocking Voltage
15
50
14
TJ
Operating Temperature Range
14
40
VDC
CJ
Typical Junction Capacitance (Note 1)
13
30
VRMS
RΘJA
Typical Thermal Resistance (Note 2)
12
20
0.50
0.70
0.85
0.9
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
0.92
Vo
mA
10
Dimensions in inches and (millimeters)
2012-06
2012-12
WILLAS ELECTRONIC CORP.
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD4148THRU
FM1200-M+
SOT-23
Plastic-Encapsulate
Diodes
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+
Features
Ordering
Information:
design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
Device PN optimize
board
space. (1)G(2)‐WS MMBD4148‐T
• Low power loss, high efficiency.
Note: (1)
Packing code,Tape&Reel Packing
capability, low forward voltage drop.
• High current
• Low profile surface mounted application in order to
Pb Free Product
PACKAGE
Package outline
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
0.130(3.3)
surge capability.
• High
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon
epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
***Disclaimer***
• Terminals :Plated terminals, solderable per
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
• changes. WILLAS or anyone on its behalf assumes no responsibility or liability Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at
25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
WILLAS does not assume any liability arising out of the application or 12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
use of any product or circuit. Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
MaximumWILLAS products are not designed, intended or authorized for use in medical, Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave
life‐saving implant or other applications intended for life‐sustaining or other related 30
IFSM
Am
superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
P
120
or indirectly cause injury or threaten a life without expressed written approval Typical Junction
Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 0.85
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-12
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.