WILLAS FM120-M+ MMBD4148THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch DIODE SWITCHING better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to optimize board space. z Fast Switching Speed • Low power loss, high efficiency. z Purposelow Switching Applications HighGeneral current capability, forward voltage drop. •For High surge capability. • z High Conductance • Guardring for overvoltage protection. z Pb-Free package is available • Ultra high-speed switching. for packing code suffix ”G” Silicon product epitaxial planar chip, metal silicon junction. •RoHS Lead-free parts meet environmental standards of •Halogen free product for packing code suffix “H” SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 3 MIL-STD-19500 /228 z Sensitivity Level RoHS product for packing code 1 suffix "G" •Moisture 2 Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MARKING: KA2 :Plated terminals, solderable per MIL-STD-750 , • Terminals 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band Position : Any • MountingParameter Symbol Limit Unit • Weight :Peak Approximated gram Non-Repetitive Reverse0.011 Voltage VRM 100 V MAXIMUM RATINGS CHARACTERISTICS VRRM Peak Repetitive Peak Reverse VoltageAND ELECTRICAL Working Peak Reverse Voltage V 75 Ratings at 25℃ ambient temperature unless otherwise specified. RWM DC Blocking Voltage V Single phase half wave, 60Hz, resistive of inductive load. R For capacitive load, derate current by 20% RMS Reverse Voltage VR(RMS) RATINGS IFM V 13 30 300 14 40 150 15 50 16 60 18 80 mA10 115 150 120 200 Vo Maximum Recurrent Peak Reverse Voltage Average Rectified Output Current VRRMIO 12 20 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo I 20 30 40 1.0 50 60 80 A100 150 200 Vo Peak Forward Surge Current @t=1.0μs Maximum DC Blocking Voltage @ t=1.0s VDC FSM Maximum Average Forward Rectified Current Power Dissipation Peak Forward Surge CurrentJunction 8.3 ms single sine-wave Thermal Resistance tohalf Ambient superimposed on rated load (JEDEC method) Junction Temperature CHARACTERISTICS Symbol SYMBOL F VV(BR) Maximum Forward Voltagevoltage at 1.0A DC Reverse breakdown Maximum Average Reverse Current at @T A=25℃ Forward NOTES: @T A=125℃ voltage 2- Thermal Resistance From Junction to Ambient Capacitance between terminals Reverse recovery time 2012-06 2012-12 -55~+150 40 120 ℃/W Am ℃ ℃/ ℃ P -55 to +150 ℃ - 65 to +175 ℃ Min FM130-MH Typ FM140-MH Max FM150-MH Unit FM160-MH FM180-MH Conditions FM120-MH FM1100-MH FM1150-MH FM1200-MH UN 75 0.50 0.70 V 0.85 IR=100μA 0.5 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz trr Am mW VF1IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse current 150 TSTG Parameter Rated DC Blocking Voltage -55 to +125 TJ Operating Temperature Range Electrical Ratings @Ta=25℃ Storage Temperature Range 357 CJTSTG 100 mA 1.0 30 350 Tj Storage Temperature Typical Junction Capacitance (Note 1) 2.0 IO Pd IFSMRθJA RΘJA Typical Thermal Resistance (Note 2) 53 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Forward Continuous Current Marking Code V 4 ns 0.9 0.92 Vo 10 mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Typical Characteristics • Low profile surface mounted application in order to • Epoxy : UL94-V0 rated flame retardant : Molded plastic, SOD-123H • Case 1 , • Terminals :Plated terminals, solderable per MIL-STD-750 Ta=100℃ 100 30 0.040(1.0) 0.024(0.6) 10 Ta=25℃ 0.031(0.8) Typ. Method 2026 0.3 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) (nA) 3 REVERSE CURRENT IR Mechanical data Characteristics 300 T= a 2 5℃ • 0.146(3.7) 0.130(3.3) Reverse 1000 30 MIL-STD-19500 /228 RoHS product for packing code suffix "G" 10 Halogen free product for packing code suffix "H" T= a 1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. High surge capability. • 300 • Guardring for overvoltage protection. Ultra high-speed switching. • 100 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.031(0.8) Typ. 3 • Polarity : Indicated by cathode band 0.1 Position : Any • Mounting 0.0 0.4 0.8 FORWARD VOLTAGE • Weight : Approximated 0.011 gramV F Dimensions in inches and (millimeters) 1.2 1 1.6 0 20 (V) 40 60 REVERSE VOLTAGE VR 80 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.4 RATINGS FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Ta=25 ℃ SYMBOL FM120-MH f=1MHz Marking Code 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 1.2 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ 1.1 Storage Temperature Range 1.0 0 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 200 at REVERSE 1.0A DC VOLTAGE Am Am 40 120 100 -55 to +125 ℃/ P -55 to +150 ℃ - 65 to +175 ℃ 0 0 25 50 75 100 125 150 15 20 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL VR (V) VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 TSTG 5 10 CHARACTERISTICS Maximum Forward Voltage 300 PD CAPACITANCE BETWEEN TERMINALS CT (pF) 1.3 (mW) VRRM Maximum Recurrent Peak Reverse Voltage Power Derating Curve 400 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Capacitance Characteristics For capacitive load, derate current by 20% @T A=125℃ IR 0.50 AMBIENT TEMPERATURE 0.70 T 0.85a 0.5 (℃ ) 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-12 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .006(0.15)MIN. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .122(3.10) .106(2.70) .063(1.60) .047(1.20) Mechanical data 0.012(0.3) Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) Maximum DC Blocking Voltage VRRM Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range CHARACTERISTICS 21 28 35 42 56 30 40 50 60 80 VF @T A=125℃ IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 10 115 .008(0.20) 100 150 20 Maximum Average Reverse Current at @T A=25℃ NOTES: 18 80 70 105 .003(0.08) 100 150 120 200 Vo 140 Vo 200 Vo 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 16 60 TSTG .004(0.10)MAX. Rated DC Blocking Voltage 15 50 14 TJ Operating Temperature Range 14 40 VDC CJ Typical Junction Capacitance (Note 1) 13 30 VRMS RΘJA Typical Thermal Resistance (Note 2) 12 20 0.50 0.70 0.85 0.9 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 0.92 Vo mA 10 Dimensions in inches and (millimeters) 2012-06 2012-12 WILLAS ELECTRONIC CORP. Rev.D WILLAS ELECTRONIC CORP.