WILLAS FM120-M+ THRU BC817-40WT1 Purpose FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. NPN Silicon power loss, efficiency. • Low declare that the high material of product compliance with RoHS requirements. • We 0.146(3.7) 0.130(3.3) capability, low forward voltage drop. • High current Pb-Free package is available • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen free product for packing code suffix “H” switching. • Ultra high-speed 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 MAXIMUM RATINGS Rating Symbol Halogen free product for packing code suffix "H" Mechanical Collector–Emitterdata Voltage V CEO Value Unit 45 V : UL94-V0 Voltage rated flame retardant • Epoxy Collector–Base V CBO 50 : Molded plastic, SOD-123H • Case 5.0 Emitter–Base Voltage V EBO , • Terminals :Plated terminals, solderable per MIL-STD-750 Collector Current — Continuous Method 2026 IC 500 • Polarity : Indicated by cathode band • Mounting Position : Any THERMAL CHARACTERISTICS • Weight : Approximated 0.011 gram SOT–323 0.040(1.0) 3 0.024(0.6) COLLECTOR V 0.031(0.8) Typ. V 0.031(0.8) Typ. ry • RoHS product for packing code suffix "G" 1 BASE mAdc im ina Dimensions in inches and (millimeters) Characteristic Symbol Max 2 EMITTER Unit MAXIMUM RATINGS AND ELECTRICAL Total Device Dissipation FR– 5 Board, (1) P DCHARACTERISTICS 225 1.8 mW mW/°C 556 °C/W Total Device Dissipation P D FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH RATINGS Alumina Substrate, (2) T 300 A = 25°C Marking Code 12 13 14 15mW 16 18 10 115 120 DeratePeak above 25°C Voltage 2.4 mW/°C 60 20 30 40 50 80 100 150 200 Maximum Recurrent Reverse Volts VRRM Thermal Resistance, Junction to Ambient R θJA 417 °C/W Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Junction and Storage Temperature T J , T stg –55 to +150 °C Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Pr el TA =ambient Ratings at 25℃ 25°C temperature unless otherwise specified. above 25°Cresistive of inductive load. Single phaseDerate half wave, 60Hz, Thermal Resistance, R θJA For capacitive load, derate currentJunction by 20%to Ambient ELECTRICAL CHARACTERISTICS (TA =IO25°C unless otherwise noted.) Typ 1.0 30Max — 40 120 — Maximum Average Forward Rectified Current Peak Forward Surge Current Characteristic 8.3 ms single half sine-wave IFSM OFF CHARACTERISTICS Typical Thermal Resistance (Note 2) RΘJA superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Collector–Emitter Breakdown Voltage CJ Operating Temperature Range (I = –10 mA) TJ C Storage Temperature Range Collector–Emitter Breakdown Voltage (VEB = CHARACTERISTICS 0, IC = –10 µA) Maximum Forward Voltage at 1.0A DC Voltage Emitter–Base Breakdown E Collector Cutoff Current NOTES: V (BR)CEO-55 to +125 45 Unit ℃/W PF V to +150 -55 ℃ - 65 to +175 V (BR)CES VF @T A=125℃ 50 — ℃ — V IR V (BR)EBO 0.50 5.0 0.70 — 0.5— 0.85 V 0.9 0.92 I CBO — — 100 nA (VCB = 20 V, TA = 150°C) — — 5.0 µA Volts 10 (VCB = 20 V) 2- Thermal Resistance From Junction to Ambient Amps SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Min TSTG Maximum Average Reverse (I = –1.0 µA) Current at @T A=25℃ Rated DC Blocking Voltage Symbol Amps mAmp 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC817-40WT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers ELECTRICAL (TA = 25°C unless otherwise noted) (Continued) better reverseCHARACTERISTICS leakage current and thermal resistance. • Low profile surface mounted application in order to Characteristic optimize board space. • Low power loss, high efficiency. ON CHARACTERISTICS current capability, low forward voltage drop. • High surge capability. • HighDC Current Gain for overvoltage protection. • Guardring (I C= 100 mA, V CE = 1.0 V) • Ultra high-speed switching. • Silicon (I C epitaxial = 500 mA,planar V CE = chip, 1.0 V)metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 product for packing code suffix "G" • RoHSCollector–Emitter Saturation Voltage Halogen free product for packing code suffix "H" (I C = 500 mA, I B = 50 mA) Symbol SOD-123H Min Typ Max 0.146(3.7) 0.130(3.3) Unit 0.012(0.3) Typ. h FE 250 — 600 40 — — 0.071(1.8) 0.056(1.4) V CE(sat) — — 0.7 V V BE(on) — — 1.2 0.040(1.0) 0.024(0.6) Mechanical data SMALL–SIGNAL CHARACTERISTICS 0.031(0.8) Typ. V 0.031(0.8) Typ. Dimensions in inches 100 — and (millimeters) — MHz im ina • • • Method 2026 Current–Gain — Bandwidth Product Polarity : Indicated by cathode band ( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz) Mounting Position : Any Output Capacitance Weight : Approximated 0.011 gram (V CB = 10 V, f = 1.0 MHz) ry Base–Emitter On Voltage • Epoxy : UL94-V0 rated flame retardant = 500 mA, V CE =SOD-123H 1.0 V) plastic, • Case( I: CMolded , • Terminals :Plated terminals, solderable per MIL-STD-750 fT C obo — 10 — pF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ORDERING INFORMATION Ratings at 25℃ ambient temperature unless otherwise specified. Device60Hz, resistive Marking Single phase half wave, of inductive load. Shipping For capacitive load, derate current by 20% BC817-40WT1 YM 3000/Tape&Reel RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BC817-40WT1 General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SOT−323 better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. .087(2.20) drop. • High current capability, low forward voltage • High surge capability. .070(1.80) • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ina ry Mechanical data 0.146(3.7) 0.130(3.3) .096(2.45) .078(2.00) .054(1.35) .045(1.15) .004(0.10)MIN. SOD-123H • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , .056(1.40) • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 .047(1.20) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .010(0.25) .003(0.08) 0.031(0.8) Typ. 0.031(0.8) Typ. Pr eli m Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS Marking Code .043(1.10) .032(0.80) .004(0.10)MAX. Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Recurrent Peak Reverse Voltage .016(0.40) VRRM .008(0.20) 12 20 VRMS 14 Maximum DC Blocking Voltage VDC 20 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Maximum RMS Voltage 13 30 14 40 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) CJ 0.65 0.025 Storage Temperature Range TJ 18 80 10 100 115 150 120 200 Volts 21 28 35 42 56 70 105 140 30 40 50 60 80 100 150 200 Volts 1.0 30 SOLDERING FOOTPRINT* RΘJA Typical Junction Capacitance (Note 1) Operating Temperature Range 16 60 Volts DimensionsIO in inches and (millimeters) Maximum Average Forward Rectified Current 15 50 40 120 0.65 -550.025 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: IR 0.50 1.9 0.075 0.70 0.85 0.5 0.9 0.92 10 0.9 0.035 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012- 0.7 0.028 SCALE 10:1 Volts mm inches WILLAS ELECTRONIC CORP. mAm