APT20M45BVR(G)
200V, 56A, 0.045Ω
APT20M45BVR(G)
POWER MOS V®
POWER MOS V® is a new generation of high voltage N-Channel enhancement
TO
mode power MOSFETs. This new technology minimizes the JFET effect, increase
packing density and reduces the on-resistance. Power MOS V® also achieves
faster switching speeds through optimized gate layout.
-24
7
D3
FEATURES
• Faster switching
• Lower Leakage
D
• 100% Avalanche tested
G
• Popular TO-247 Package
• RoHS compliant
S
All Ratings: TC = 25°C unless otherwise specified.
Absolute Maximum Ratings
Ratings
Unit
Drain Source Voltage
200
Volts
ID
Continuous Drain Current @ TC = 25°C
56
IDM
Pulsed Drain Current 1
224
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
300
Watts
Linear Derating Factor
2.4
W/C°
VDSS
PD
TJ, TSTG
Parameter
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
IAR
Avalanche Current 1 (Repetitive and Non-Repatitive)
56
EAR
Repetitive Avalanche Energy 1
30
EAS
Single Pulse Avalanche Energy 4
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
°C
Amps
mJ
1300
Static Characteristics
BVDSS
Volts
-55 to 150
TL
Symbol
Amps
TJ = 25°C unless otherwise specified
Parameter
Min
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
200
Volts
56
Amps
On State Drain Current
2
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
Typ
Max
0.045
Unit
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Collector Current (VGS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
μA
050-5514 Rev D 3 - 2010
Symbol
APT20M45BVR(G)
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Ciss
Input Capacitance
VGS = 0V
4050
4860
Coss
Output Capacitance
VDS = 25V
980
1375
Crss
Reverse Transfer Capacitance
f = 1MHz
300
450
Qg
Total Gate Charge 1
VGS = 10V
130
195
Qge
Gate-Source Charge
Qgd
Gate- Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
td(off)
tf
Rise Time
Turn-off Delay Time
Fall Time
VDD= 0.5VDSS
30
45
ID = ID[cont.]@ 25°C
55
80
VGS = 10V
12
24
VDD= 0.5VDSS
14
28
ID = ID[cont.]@ 25°C
43
70
RG = 1.6Ω
7
14
Typ
Max
Unit
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic / Test Conditions
IS
Continuous Source Current (Body Diode)
Min
56
ISM
1
Pulse Source Current (Body Diode)
224
VSD
Diode Forward Voltage 2 (VGS = 0V, IS= -ID[Cont.])
1.3
Unit
Amps
Volts
trr
Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs)
280
nS
Qrr)
Reverse Recovery Time (IS = -ID[Cont.], dIS/dt = 100A/μs)
3.5
μC
Thermal Characteristics
Symbol
Characteristic
RθJC
Junction to Case
0.42
RθJA
Junction to Ambient
40
Typ
Max
3
Repetitive Rating: Pulse width limited by maximum junction
See MIL-STD-750 Method 3471
4
temperature.
Starting Tj = +25°C, L = 830μH, RG = 25Ω, Peak IL = 56A
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
050-5514 Rev D 3 - 2010
1
Min
Unit
C °/W
APT20M45BVR(G)
050-5514 Rev D 3 - 2010
Typical Performance Curves
Typical Performance Curves
APT20M45BVR(G)
TO-247 (B) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-5514 Rev D 3 - 2010
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.