APT609RKVR
600V
Ω
9.0Ω
1A
POWER MOS V ®
TO-220
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
G
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-220 Package
VDSS
ID
D
S
G
L
A
C
I
N
H
C N
E
T
O
I
E AT
C
N RM
A
V FO
D
A
IN
MAXIMUM RATINGS
Symbol
D
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT609RKVR
UNIT
600
Volts
Drain-Source Voltage
1
Continuous Drain Current @ TC = 25°C
1
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
VGSM
PD
TJ,TSTG
S
Amps
4
Volts
Total Power Dissipation @ TC = 25°C
31
Watts
Linear Derating Factor
.25
W/°C
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
1
(Repetitive and Non-Repetitive)
1
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
Amps
15
4
mJ
55
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
Volts
1
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
9.0
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
UNIT
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-7253 Rev - 2-2002
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT609RKVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
249
Coss
Output Capacitance
VDS = 25V
42
Crss
Reverse Transfer Capacitance
f = 1 MHz
13
Qg
Total Gate Charge
VGS = 10V
15
Qgs
Gate-Source Charge
3
VDD = 0.5 VDSS
1
ID = 20ma @ 25°C
7
VGS = 15V
11
Rise Time
VDD = 0.5 VDSS
13
Turn-off Delay Time
ID = 1A @ 25°C
73
RG = 1.6Ω
86
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
tf
Fall Time
L
A
C
I
N
H
C N
E
T
O
I
E AT
C
N RM
A
V FO
D
A
IN
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
TYP
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
MAX
1
4
1.3
UNIT
Amps
Volts
162
ns
1
µC
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
TYP
RθJC
Junction to Case
4.0
RθJA
Junction to Ambient
80
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 110mH, R = 25Ω, Peak I = 1A
j
G
L
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
Drain
6.85 (.270)
5.85 (.230)
16.51 (.650)
14.23 (.560)
4.08 (.161) Dia.
3.54 (.139)
3.42 (.135)
2.54 (.100)
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
2-2002
0.50 (.020)
0.41 (.016)
050-7253 Rev -
MAX
Gate
Drain
Source
2.92 (.115)
2.04 (.080)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
4.82 (.190)
3.56 (.140)
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
°C/W