C O N F I D E N T I A L LX5510 I N T E G R A T E D P R O D U C T S InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 120mA total DC current with the nominal 3.3V bias. With increased bias of 4.5V EVM is ~ 5% at 23dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 120mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3x3mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. APPLICATIONS IEEE 802.11b/g PRODUCT HIGHLIGHT LX5510 PACKAGE ORDER INFO Plastic MLPQ LQ 16 pin LX5510-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5510-LQT) Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 C O N F I D E N T I A L LX5510 I N T E G R A T E D InGaP HBT 2.4 – 2.5 GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET ABSOLUTE MAXIMUM RATINGS WWW . Microsemi .C OM 13 14 15 16 12 * 1 11 2 10 3 4 9 8 7 6 GND RF IN RF IN GND 5 GND VB1 VB2 GND Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 VCC VC2 RF OUT RF OUT GND GND VC1 GND DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-60°C to +150°C PACKAGE PIN OUT * Pad is Ground LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF OUT RF output for the power amplifier. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 4pF bypass capacitor 50mil apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). VC2 Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2nH AC blocking inductor and 1uF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA VC1 C O N F I D E N T I A L LX5510 I N T E G R A T E D InGaP HBT 2.4 – 2.5 GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET ELECTRICAL CHARACTERISTICS Parameter Frequency Range Symbol Test Conditions f Power Gain at Pout = 19dBm Gp EVM at Pout = 19dBm Total Current at Pout = 19dBm Min 2.4 64QAM / 54Mbps ≤ 70°C except where LX5510 Typ Max 2.5 Units GHz 20 dB 3.0 % Ictotal 120 mA Quiescent Current Icq 65 mA Bias Control Reference Current Iref For Icq = 65mA 1.2 mA Small-Signal Gain 20 dB Gain Flatness Gain Variation Over Temperature Input Return Loss ∆S21 S21 Over 100MHz ±0.5 dB ∆S21 -40°C to +85°C TBD dB 10 dB Output Return Loss S22 10 dB Reverse Isolation S12 -40 dB -60 dBc -50 dBc TBD dB S11 Second Harmonic Pout = 19dBm Third Harmonic Pout = 19dbm Noise Figure NF Ramp-On Time tON 10 ~ 90% 100 WWW . Microsemi .C OM Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C ns Note: All measured data was obtained on a 10mil GETEK evaluation board without heat sink. ELECTRICALS Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 C O N F I D E N T I A L LX5510 I N T E G R A T E D InGaP HBT 2.4 – 2.5 GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET S PARAMETER (3.3V) POWER SWEEP m7 freq=2.500GHz dB(S (2,1))=18.846 m2 freq=2.450GHz dB(S (2,1))=19.421 WWW . Microsemi .C OM m1 freq=2.400GHz dB(S (2,1))=19.788 m7 -10 m1 m2 dB(S (2,1)) dB(S (1,1)) 30 dB(S (2,2)) dB(S (1,2)) 40 20 10 0 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 Fre quency GHz Figure 2 – Power Sweep (Vc = 3.3V, Vref = 2.85V, Icq = 65mA) Figure 1 – S-Parameter Data (VC = 3.3V, VREF = 2.85V, Icq = 65mA) EVM DATA ACP DATA CURRENT_3.3V ACP_30MHz 180 7 170 6 160 5 150 4 140 3 130 2 120 1 110 0 -40 -42.5 -45 100 17 18 19 20 ACP (dBc) 8 Current (mA) EVM (%) EVM_PA_ONLY -47.5 -50 -52.5 -55 17 21 18 19 20 21 Output Power (dBm) Output Power (dBm) Figure 3 – EVM Data with 54Mbps 64QAM OFDM (Vc = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) Figure 4 – ACP Data with 54Mbps 64QAM OFDM (VC = 3.3V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) CCK SPECTRUM S PARAMETER (4.5V) m1 freq=2.400GHz S21 (dB)=20.041 m7 freq=2.500GHz S21 (dB)=19.143 m2 freq=2.450GHz S21 (dB)=19.710 dB(S (2,2)) dB(S (1,2)) m1 m2 m7 30 20 10 GRAPHS dB(S (2,1)) dB(S (1,1)) 40 0 -10 -20 -30 -40 -50 2.0 Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz) Copyright 2003 Rev. 0.3g, 2003-05-08 2.2 2.4 2.6 2.8 3.0 fre quency (GHz) Figure 6 – S-Parameter Data (Vc = 4.5V, Vref = 2.85V, Icq = 65mA) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 C O N F I D E N T I A L LX5510 I N T E G R A T E D InGaP HBT 2.4 – 2.5 GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET EVM DATA EVM (%) 8 180 7 170 6 160 5 150 4 140 3 130 2 120 1 110 0 WWW . Microsemi .C OM CURRENT_4.5V EVM_PA_ONLY Current (mA) POWER SWEEP 100 17 18 19 20 21 22 23 24 Output Power (dBm) Figure 7 – Power Sweep (Vc = 4.5V, Vref = 2.85V, Icq = 65mA) Figure 8 – EVM Data with 54Mbps 64QAM OFDM (Vc = 4.5V, Vref = 2.85V, Icq =65mA, Frequency =2.45GHz) ACP DATA CCK SPECTRUM ACP_30MHz -45 -47.5 ACP (dBc) -50 -52.5 -55 -57.5 -60 17 18 19 20 21 22 23 24 Output Power (dBm) Figure 9 – ACP Data with 54Mbps 64QAM OFDM (Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Frequency = 2.45GHz) Figure 10 – Spectrum with 23dBm 11Mb/s CCK (Vc = 4.5V, Vref = 2.85V, Icq = 65mA, Ic = 180mA, Freq = 2.45GHz) GRAPHS Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 C O N F I D E N T I A L LX5510 I N T E G R A T E D InGaP HBT 2.4 – 2.5 GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM LQ 16-Pin MLPQ Plastic (3x3mm EP) D b D2 E E2 e K L A A1 Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.18 0.30 0.18 0.30 3.00 BSC 3.00 BSC 0.5 BSC 1.50 1.80 1.50 1.80 0.2 0.35 0.45 INCHES MIN MAX 0.031 0.039 0 0.002 0.007 0.012 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 A3 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 C O N F I D E N T I A L LX5510 I N T E G R A T E D P R O D U C T S InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RELIMINARY D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2003 Rev. 0.3g, 2003-05-08 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8