IPD07N03L IPU07N03L OptiMOS Buck converter series Product Summary Feature VDS 30 V •Logic Level RDS(on) 6.8 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11 •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converters Type Package Ordering Code Marking IPD07N03L P- TO252 -3-11 Q67042-S4029 07N03L IPU07N03L P- TO251 -3-1 Q67042-S4105 07N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Value Unit A 30 TC=25°C 30 Pulsed drain current ID puls 120 TC=25°C EAS 30 Repetitive avalanche energy, limited by Tjmax 2) EAR 15 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 150 W Avalanche energy, single pulse mJ ID=20A, V DD=25V, RGS=25Ω kV/µs IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +175 °C 55/175/56 Page 1 2003-01-17 IPD07N03L IPU07N03L Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 0.68 1 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 3) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS=0V, I D=1mA Gate threshold voltage, V GS = VDS ID = 80 µA Zero gate voltage drain current µA IDSS VDS=30V, V GS=0V, T j=25°C - 0.01 1 VDS=30V, V GS=0V, T j=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 7.7 9.9 mΩ RDS(on) - 5.7 6.8 Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.5V, ID=30A Drain-source on-state resistance VGS=10V, ID=30A 1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 116A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD07N03L IPU07N03L Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 29 58 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=30A Input capacitance Ciss VGS=0V, VDS =25V, - 1900 2530 Output capacitance Coss f=1MHz - 740 990 Reverse transfer capacitance Crss - 180 270 Gate resistance RG - 2.3 - Ω Turn-on delay time t d(on) VDD=15V, VGS=10V, - 7.8 11.7 ns Rise time tr ID=15A, - 17 26 - 62 93 - 47 70 - 4.4 5.5 - 14.8 18.1 - 26.8 33.5 - 25.5 31.9 Turn-off delay time t d(off) Fall time tf RG =3.6Ω Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD=15V, ID=15A VDD=15V, ID=15A, nC VGS=0 to 5V Output charge Q oss VDS=15V, ID =15A, nC VGS=0V Gate plateau voltage V(plateau) VDD=15V, ID=15A - 2.5 - V IS TC=25°C - - 30 A - - 120 Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =30A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 41 51 ns Reverse recovery charge Qrr diF /dt=100A/µs - 46 58 nC Page 3 2003-01-17 IPD07N03L IPU07N03L 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (TC) parameter: VGS≥ 10 V IPD07N03L 32 W A 120 24 ID P tot 160 100 20 80 16 60 12 40 8 20 4 0 0 20 40 60 80 IPD07N03L 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp) parameter : D = 0 , T C = 25 °C parameter : D = tp/T 10 3 10 1 IPD07N03L IPD07N03L K/W A /I D 10 0 = ZthJC V DS tp = 14.0µs R ID DS (on ) 10 2 10 -1 100 µs D = 0.50 10 10 -2 0.20 1 ms 1 0.10 0.05 10 ms DC 10 -3 0.02 single pulse 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp VDS Page 4 2003-01-17 10 0 IPD07N03L IPU07N03L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=25°C parameter: t p = 80 µs RDS(on) = f (ID) A IPD07N03L Ptot = 150W 24 i h g 60 f ID 55 50 45 e 40 35 30 b 2.8 c 3.0 d 3.2 e 3.4 f 3.6 g 3.8 h 4.5 i 10.0 d e f 20 18 16 14 g 12 10 d h 8 25 20 6 c 15 5 VGS [V] = 2 a 0.5 1 1.5 2 2.5 3 3.5 i 4 b 10 0 0 IPD07N03L Ω VGS [V] a 2.6 RDS(on) 75 parameter: VGS 4 V d 3.2 0 0 5 e f 3.4 3.6 10 g 3.8 20 h i 4.5 10.0 30 40 50 A 65 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C parameter: t p = 80 µs parameter: gfs 90 60 A S 50 70 40 gfs ID 45 35 60 50 30 40 25 30 20 15 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 4 V VGS Page 5 0 0 20 40 60 80 100 A 130 ID 2003-01-17 IPD07N03L IPU07N03L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 30 A, V GS = 10 V parameter: VGS = VDS 16 IPD07N03L 2.5 Ω 1mA 12 V GS(th) RDS(on) V 10 1.5 98% 8 85µA 1 typ 6 4 0.5 2 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 Tj 180 °C Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 IPD07N03L A pF Ciss C IF 10 2 Coss 10 3 10 1 Tj = 25 °C typ Tj = 175 °C typ Crss Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V VSD VDS Page 6 2003-01-17 3 IPD07N03L IPU07N03L 13 Typ. avalanche energy 15 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: I D = 20 A, V DD = 25 V, RGS = 25 Ω parameter: I D=10 mA 36 30 IPD07N03L V V(BR)DSS E AS mJ 20 34 33 32 15 31 30 10 29 5 28 0 25 45 65 85 105 125 145 °C 185 Tj 27 -60 -20 20 60 100 140 °C Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 15 A pulsed 16 IPD07N03L V VGS 12 10 8 6 4 0.2 VDS max 0.5 VDS max 2 0 0 0.8 VDS max 10 20 30 40 50 60 nC 75 Q Gate Page 7 2003-01-17 200 IPD07N03L IPU07N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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