ARF466A ARF466B TO-264 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized for both linear and high efficiency classes of operation. • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter ARF466A_B VDSS Drain-Source Voltage 1000 VDGO Drain-Gate Voltage 1000 ID Continuous Drain Current @ TC = 25°C UNIT Volts 13 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 357 Watts Junction to Case 0.35 °C/W RθJC TJ,TSTG TL Operating and Storage Junction Temperature Range -55 to 150 °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVDSS RDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1 , TYP MAX 1000 Volts ) (VGS = 10V ID = 6.5A 1.0 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 25 Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 6.5A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3.3 ohms μA ±100 nA 9 mhos 4 Volts 7 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT 050-4925 Rev D 7-2009 Symbol DYNAMIC CHARACTERISTICS Symbol ARF466A_B Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN Test Conditions Characteristic Turn-off Delay Time Fall Time MAX UNIT 2000 VGS = 0V Rise Time TYP VDS = 150V f = 1 MHz 165 VGS = 15V 12 VDD = 500 V 10 ID = 13A @ 25°C 43 RG = 1.6W 10 pF 75 ns FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 14 16 dB 70 75 % VGS = 2.5V η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 VDD = 150V Pout = 300W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 10,000 30 Class C VDD = 150V 25 Pout = 150W CAPACITANCE (pf) 20 GAIN (dB) Ciss 15 10 1000 500 Coss 100 Crss 50 5 0 30 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 18 16 52 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 14 12 10 8 6 4 2 0 TJ = -55°C TJ = +25°C TJ = +125°C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4925 Rev D 7-2009 20 OPERATION HERE LIMITED BY R (ON) DS 100uS 10 5 1mS 1 10mS .5 .1 TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS TYPICAL PERFORMANCE CURVES 1.05 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ARF466A_B 25 1.10 1.00 0.95 0.90 0.85 0.80 VGS=15 & 10V 20 8V 15 6V 10 5.5V 5V 5 4.5V 4V 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.35 0.9 0.30 0.7 0.25 0.20 0.5 0.15 0.3 0.10 0.05 0 0.1 SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp (°C) 0.113 °C/W 0.0130 F 0.236 °C/W 0.147 F Power (watts) Case temperature (°C) Figure 7b, TRANSIENT THERMAL IMPEDANCE Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) ZIN (Ω) 2.0 13.5 27.1 40.7 65 17.9 - j 11.2 1.1 - j 4.9 .25 - j 1.5 .15 - j 0.9 .31 + j 2.0 ZOL (Ω) 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9 IDQ = 100mA ZIN - Gate shunted with 25Ω ZOL - Conjugate of optimum load for 300W output at Vdd = 150V 050-4925 Rev D 7-2009 Z JC, THERMAL IMPEDANCE (°C/W) q 0.40 ARF466A_B L4 + 150V - R1 Bias + 0-12V - C7 R2 R3 C8 L3 RF Output C6 RF Input C9 C2 L1 L2 C4 DUT TL1 C3 C5 C1 40.68 MHz Test Circuit C1 -- 2200 pF ATC 700B C2-C5 -- Arco 465 Mica trimmer C6-C8 -- .1μF 500V ceramic chip C9 -- 3x 2200 pF 500V chips COG L1 -- 4t #22 AWG .25"ID .25 "L ~87nH L2 -- 5t #16 AWG .312" ID .35"L ~176nH L3 -- 10t #24 AWG .25"ID ~.5μH L4 -- VK200-4B ferrite choke 3μH R1- R3 -- 1k W 0.5Ω Carbon TL1 -- 38Ω t-line .175 x 1 in long C1 .45" from gate pin. DUT = ARF466A/B TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 050-4925 Rev D 7-2009 Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 5.79 (.228) 6.20 (.244) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 2.29 (.090) 2.69 (.106) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.