ADPOW ARF463AP1G

ARF463AP1
ARF463BP1
ARF463AP1G* ARF463BP1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
D
Common
Source
G
RF POWER MOSFETs
TO-247
S
N - CHANNEL ENHANCEMENT MODE
125V
100A
100MHz
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 81.36MHz Characteristics:
•
Output Power = 100 Watts.
•
Gain = 15dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF463A_BP1(G)
VDSS
Drain-Source Voltage
500
VDGO
Drain-Gate Voltage
500
ID
Continuous Drain Current @ TC = 25°C
UNIT
Volts
9
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
180
Watts
Junction to Case
0.70
°C/W
RθJC
TJ,TSTG
TL
-55 to 150
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
VDS(ON) On State Drain Voltage
IDSS
IGSS
gfs
VGS(TH)
1
TYP
(I D(ON) = 4.5A, VGS = 10V)
MAX
5.0
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 4.5A)
2
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
Volts
µA
±100
nA
4
mhos
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
3-2006
BVDSS
Characteristic / Test Conditions
050-4924 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF463A_BP1(G)
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Turn-off Delay Time
Fall Time
MAX
UNIT
670
VGS = 0V
Rise Time
TYP
VDS = 50V
120
f = 1 MHz
50
VGS = 15V
5.6
VDD = 0.5 VDSS
4.3
ID = ID[Cont.] @ 25°C
13.5
RG = 1.6Ω
4.2
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
η
ψ
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 81.36 MHz
13
15
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 10:1
VDD = 125V
Pout = 100W
MAX
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3000
30
Class C
VDD = 150V
25
CAPACITANCE (pf)
20
GAIN (dB)
1000
Pout = 150W
15
10
Ciss
500
Coss
Crss
100
50
5
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
ID, DRAIN CURRENT (AMPERES)
050-4924 Rev B
3-2006
8
6
36
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4
2
10
.1
.5 1
5 10
50
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
45
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
0
30
100uS
OPERATION HERE
LIMITED BY RDS (ON)
10
1mS
5
10mS
1
100mS
.5
.1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
DC
ARF463A_BP1(G)
16
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
GPS, COMMON SOURCE AMPLIFIER GAIN
(dB)
160
POUT, POWER OUT (WATTS)
Class C
VDD = 150V
f = 81.36 MHz
120
80
40
0
0
10V
12
9V
8V
8
7.5V
7V
4
6.5V
6V
5.5V
0
0.7
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
VGS=15V
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
14
Class C
VDD = 150V
12
f = 81.36 MHz
10
8
6
0
40
80
120
160
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
2
4
6
8
10
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.005
Note:
0.01
PDM
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27
40
65
80
100
Zin (Ω)
ZOL (Ω)
24 - j 5.0
7.8 - j 11
2.1 - j 6.4
.74 - j 3.3
.30 + j .42
.46 + j 2.0
.87 + j 3.7
55 - j 4.8
41 - j 24
23 - j 26.2
13.6 - j 22
6.1 - j 14.2
4.2 - j 10.7
2.7 - j 7.1
Zin - Gate shunted with 25Ω
IDQ = 50mA
ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 125V
3-2006
0.001
10-5
050-4924 Rev B
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.8
ARF463A_BP1(G)
L4
C5
Bias
0 - 12V
C6
L3
C7
+
125V
-
C8
C4
RF
Output
R1
RF
Input
L2
C2
L1
C3
C5
C1 -- 820pF Unelco mounted at
gate lead
C2-C5 -- Arco 463 Mica trimmer
C5-C8 -- 10nF 500V COG chip
L1 -- 3t #18 .3" ID .25"L ~50nH
L2 -- 3t #16 AWG .25" ID .3"L ~58nH
L3 -- 10t #18 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH
R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF463A/B
DUT
R2
C1
81.36 MHz Test Circuit
TO-247 Package Outline
e3 100% Sn Plated
Top View
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Source
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
3-2006
0.40 (.016)
0.79 (.031)
050-4924 Rev B
5.38 (.212)
6.20 (.244)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
Device
ARF - AP1 ARF - BP1
Gate
Drain
Source
Source
Drain
Gate
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.