ARF463A ARF463B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463A and ARF463B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 125 Volt, 81.36 MHz Characteristics: • Output Power = 100 Watts. • Gain = 15dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ARF463A/B UNIT 500 Volts 9 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 180 Watts Junction to Case 0.70 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VDS(ON) IDSS IGSS gfs VGS(TH) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 500 On State Drain Voltage 1 TYP MAX Volts (I D(ON) = 4.5A, VGS = 10V) 5.0 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 4.5A) 4 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 6 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA mhos 5 Volts 6-2003 BVDSS Characteristic / Test Conditions 050-5998 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol ARF463A/B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 1200 1600 VDS = 50V 140 200 f = 1 MHz 9 12 VGS = 15V 5.1 10 VDD = 0.5 VDSS 4.1 8 ID = ID[Cont.] @ 25°C 12.8 20 RG = 1.6Ω 4 8 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 13 15 dB 60 65 % Idq = 50mA Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 125V Pout = 100W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 30 Class C VDD = 150V 25 CAPACITANCE (pf) 20 GAIN (dB) Ciss 1000 Pout = 150W 15 10 500 Coss 100 50 5 Crss 0 30 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 10 36 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 8 6 4 2 TJ = +25°C TJ = +125°C 0 0 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-5998 Rev B 6-2003 12 100uS OPERATION HERE LIMITED BY RDS (ON) 10 1mS 5 10mS 1 100mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .1 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF463A/B 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.0 0.8 0.6 0.4 0.2 20 VGS=15 & 10V 8V 15 6V 5.5V 10 5V 5 4.5V 4V 0.0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.80 0.9 0.60 0.50 0.7 0.40 0.5 Note: 0.30 PDM 0.3 t1 0.20 t2 SINGLE PULSE 0.1 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9a, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (watts) 0.147 0.00259F 0.231 0.00818F 0.321 0.127F Case temperature Figure 9b, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin (Ω) ZOL (Ω) 24 - j 5.0 7.8 - j 11 2.1 - j 6.4 .74 - j 3.3 .30 + j .42 .46 + j 2.0 .87 + j 3.7 55 - j 4.8 41 - j 24 23 - j 26.2 13.6 - j 22 6.1 - j 14.2 4.2 - j 10.7 2.7 - j 7.1 Zin - Gate shunted with 25Ω!! IDQ = 50mA ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 125V 6-2003 0.10 Duty Factor D = t1/t2 050-5998 Rev B Z JC, THERMAL IMPEDANCE (°C/W) θ 0.70 ARF463A/B L4 + 125V - C5 Bias 0 - 12V C6 L3 C7 C8 C4 RF Output R1 RF Input L2 C2 L1 C5 C1 -- 820pF Unelco mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L1 -- 3t #18 .3" ID .25"L ~50nH L2 -- 3t #16 AWG .25" ID .3"L ~58nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF463A/B DUT C3 R2 C1 81.36 MHz Test Circuit HAZARDOUS MATERIAL WARNING TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 6-2003 Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 050-5998 Rev B The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 2.21 (.087) 2.59 (.102) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.