ARF461A(G) ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter ARF461AG/BG VDSS Drain-Source Voltage 1000 VDGO Drain-Gate Voltage 1000 ID Unit V Continuous Drain Current @ TC = 25°C 6.5 A VGS Gate-Source Voltage ±30 V PD Total Power Dissipation @ TC = 25°C 250 W 0.50 °C/W RθJC TJ, TSTG TL Junction to Case Operating and Storage Junction Temperature Range -55 to 150 Lead Temperature: 0.063” from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Parameter Min BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) 1000 VDS(ON) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V) 6.5 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) 250 IGSS Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) gfs Forward Transconductance (VDS = 25V, ID = 3.25A) 3 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 VGS(TH) Max ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit V μA nA mhos 5 Volts 6-2008 IDSS Typ 050-5987 Rev D Symbol Dynamic Characteristics Symbol ARF461A/B Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 1700 Coss Output Capacitance VDS = 50V 175 Crss Reverse Transfer Capacitance f = 1MHz 50 td(on) Turn-On Delay Time tr td(off) Turn-off Delay Time tf Fall Time Unit pF 8 VGS = 15V Rise Time Max VDD = 0.5VDSS 5 ID = ID (Cont.) @ 25°C 21 RG = 1.6Ω 10.1 ns Functional Characteristics Symbol Characteristic GPS 1 Test Conditions Min Typ f = 40.68MHz 13 15 dB VGS = 0V VDD = 250V 70 75 % Common Source Amplifier Power Gain η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 POUT = 150W Max Unit No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 5000 30 Class C VDD = 150V 25 1000 CAPACITANCE (pf) 20 GAIN (dB) Ciss Pout = 150W 15 10 500 Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-5987 Rev D 6-2008 8 6 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 26 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 4 2 10 45 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 0 30 10 OPERATION HERE (ON) LIMITED BY R DS 5 1mS 10mS 1 .5 .1 100uS 100mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF461A/B 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 VGS=15, 10, 8 & 6.5V 20 6V 15 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 5V 4.5V 5 4V 0 0.7 -50 -25 5.5V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.50 0.9 0.30 0.20 0.10 0 10-5 0.7 0.5 0.3 0.1 0.05 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (Watts) 0.0284 0.00155F 0.165 0.00934F 0.307 0.128F Case temperature Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin (7) 20.9 - j 9.2 2.4 - j 6.8 .57 - j 2.6 .31 - j 0.5 .44 + j 1.9 ZOL (7) 38 - j 2.6 31 - j 14 19.6 - j 17.6 12.5 - j 15.8 6.0 - j 10.5 Zin - Gate shunted with 257 IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V 6-2008 0.40 050-5987 Rev D ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 ARF461A/B L4 Bias 0 - 12V + - C7 L3 C6 RF Input R1 C9 C5 + C1 -- 1800pF + 1000pF 100V chips 250V mounted at gate lead - C8 L1 L2 C1 R2 C2 C4 C3 DUT 40.68 MHz Test Circuit C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 μF 500V ceramic chip C9 -- 2200 pF 500 V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 7t #16 AWG .4" ID .5"L ~335nH L3 -- 25t #24 AWG .25"ID ~2.2uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF461A/B TO-247 Package Outline 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Device ARF- A ARF- B Gate ------- Drain Source ---- Source 050-5987 Rev D 6-2008 Drain ------- Gate 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches)