INFINEON BG3140

BG3140...
4
DUAL N-Channel MOSFET Tetrode
5
6
• Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
2
• Integrated gate protection diodes
3
1
VPS05604
• Low noise figure
• High gain, high forward transadmittance
• Improved cross modulation at gain reduction
• High AGC-range
BG3140
6
BG3140R
6
5
4
A
A
B
1
2
1
3
AGC
HF
Input
4
5
B
Drain
2
HF Output
+ DC
G2
G1
R G1
GND
3
VGG
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BG3140
SOT363
1=G1
2=G2
3=D
4=D
5=S
6=G1
KDs
BG3140R
SOT363
1=G1
2=S
3=D
4=D
5=G2
6=G1
KKs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
Gate 1/ gate 2-source current
±IG1/2SM
1
Gate 1/ gate 2-source voltage
±V G1/G2S
6
Total power dissipation, TS ≤78°C
Ptot
160
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
Value
8
25
Unit
V
mA
V
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point1)
Rthchs
≤280
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-27-2004
BG3140...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
+V(BR)G2SS
6
-
15
+IG1SS
-
-
50
µA
+IG2SS
-
-
50
nA
IDSS
-
-
10
µA
IDSX
-
15
-
mA
VG1S(p)
-
0.7
-
V
VG2S(p)
-
0.6
-
DC Characteristics
Drain-source breakdown voltage
V
ID = 10 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2-source breakdown voltage
+IG2S = 10 mA, V G1S = 0 , VDS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate2-source leakage current
VG2S = 8 V, VG1S = 0 , VDS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4.5 V
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 70 kΩ
Gate1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
Gate2-source pinch-off voltage
VDS = 5 V, I D = 20 µA
2
Feb-27-2004
BG3140...
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
gfs
-
42
-
mS
Cg1ss
-
1.9
-
pF
Cdss
-
1.1
-
AC Characteristics - (verified by random sampling)
Forward transconductance
VDS = 5 V, V G2S = 4 V
Gate1 input capacitance
VDS = 5 V, V G2S = 4 V, f = 1 MHz
Output capacitance
VDS = 5 V, V G2S = 4 V, f = 100 MHz
Power gain (self biased)
Gp
dB
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
-
24
-
-
31
-
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
Noise figure
dB
F
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 800 MHz
-
1.3
-
-
1.7
-
45
-
-
VDS = 5 V, I D = 10 mA, VG2S = 4 V,
f = 45 MHz
∆G p
Gain control range
VDS = 5 V, V G2S = 4...0 V, f = 800 MHz
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
AGC = 0 dB
96
-
-
AGC = 10 dB
-
86
-
AGC = 40 dB
96
100
-
3
Feb-27-2004
BG3140...
Total power dissipation Ptot = ƒ(TS)
Drain current ID = ƒ(IG1)
VG2S = 4V
300
30
mA
200
20
ID
P tot
mW
150
15
100
10
50
5
0
0
20
40
60
80
100
120 °C
0
0
150
10
20
30
40
50
60
70
80 µA
100
IG1
TS
Output characteristics ID = ƒ(V DS)
Gate 1 current IG1 = ƒ(V G1S)
VDS = 5V
VG2S = Parameter
160
22
mA
1.3V
µA
4V
18
1.2V
14
120
IG1
ID
16
1.1V
100
3.5V
12
80
1V
10
6
40
0.8V
4
2.5V
20
2
0
0
3V
60
8
2
4
6
8
10
V
0
0
14
VDS
0.5
1
1.5
2
2.5
V
3.5
VG1S
4
Feb-27-2004
BG3140...
Drain current ID = ƒ(V G1S)
VDS = 5V
Gate 1 forward transconductance
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VG2S = Parameter
20
40
mA
mS
4V
4V
16
3V
30
14
25
ID
g fs
3.5V
12
2.5V
3V
10
20
8
15
2.5V
6
2V
2V
10
4
5
0
0
2
4
8
12
16
20
24
28 mA
0
0
36
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 V
ID
Drain current ID = ƒ(VGG )
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 80kΩ
VG2S = 4V
(connected to VGG, VGG =gate1 supply voltage)
RG1 = Parameter in kΩ
13
mA
22
70
mA
80
11
18
10
100
16
ID
9
ID
2.2
VG1S
8
7
12
6
10
5
120
14
8
4
6
3
4
2
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGG
1
2
3
4
5
V
7
VGG=VDS
5
Feb-27-2004
BG3140...
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
120
V unw
dBµV
100
90
80
0
10
20
30
dB
50
AGC
Cossmodulation test circuit
VAGC
VDS
4n7
R1
10 kOhm
2.2 µH
4n7
4n7
RL
50 Ohm
4n7
RGEN
50 Ohm
RG1
50 Ohm
VGG
6
Feb-27-2004