BG3140... 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • High AGC-range BG3140 6 BG3140R 6 5 4 A A B 1 2 1 3 AGC HF Input 4 5 B Drain 2 HF Output + DC G2 G1 R G1 GND 3 VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BG3140 SOT363 1=G1 2=G2 3=D 4=D 5=S 6=G1 KDs BG3140R SOT363 1=G1 2=S 3=D 4=D 5=G2 6=G1 KKs 180° rotated tape loading orientation available Maximum Ratings Parameter Symbol Drain-source voltage VDS Continuous drain current ID Gate 1/ gate 2-source current ±IG1/2SM 1 Gate 1/ gate 2-source voltage ±V G1/G2S 6 Total power dissipation, TS ≤78°C Ptot 160 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Value 8 25 Unit V mA V mW °C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) Rthchs ≤280 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3140... Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 µA +IG2SS - - 50 nA IDSS - - 10 µA IDSX - 15 - mA VG1S(p) - 0.7 - V VG2S(p) - 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate2-source leakage current VG2S = 8 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 70 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 2 Feb-27-2004 BG3140... Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs - 42 - mS Cg1ss - 1.9 - pF Cdss - 1.1 - AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V Gate1 input capacitance VDS = 5 V, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, V G2S = 4 V, f = 100 MHz Power gain (self biased) Gp dB VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz - 24 - - 31 - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Noise figure dB F VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz - 1.3 - - 1.7 - 45 - - VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz ∆G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 dB 96 - - AGC = 10 dB - 86 - AGC = 40 dB 96 100 - 3 Feb-27-2004 BG3140... Total power dissipation Ptot = ƒ(TS) Drain current ID = ƒ(IG1) VG2S = 4V 300 30 mA 200 20 ID P tot mW 150 15 100 10 50 5 0 0 20 40 60 80 100 120 °C 0 0 150 10 20 30 40 50 60 70 80 µA 100 IG1 TS Output characteristics ID = ƒ(V DS) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 160 22 mA 1.3V µA 4V 18 1.2V 14 120 IG1 ID 16 1.1V 100 3.5V 12 80 1V 10 6 40 0.8V 4 2.5V 20 2 0 0 3V 60 8 2 4 6 8 10 V 0 0 14 VDS 0.5 1 1.5 2 2.5 V 3.5 VG1S 4 Feb-27-2004 BG3140... Drain current ID = ƒ(V G1S) VDS = 5V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 20 40 mA mS 4V 4V 16 3V 30 14 25 ID g fs 3.5V 12 2.5V 3V 10 20 8 15 2.5V 6 2V 2V 10 4 5 0 0 2 4 8 12 16 20 24 28 mA 0 0 36 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V ID Drain current ID = ƒ(VGG ) Drain current ID = ƒ(VGG) VDS = 5V, VG2S = 4V, RG1 = 80kΩ VG2S = 4V (connected to VGG, VGG =gate1 supply voltage) RG1 = Parameter in kΩ 13 mA 22 70 mA 80 11 18 10 100 16 ID 9 ID 2.2 VG1S 8 7 12 6 10 5 120 14 8 4 6 3 4 2 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 VGG 1 2 3 4 5 V 7 VGG=VDS 5 Feb-27-2004 BG3140... Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ 120 V unw dBµV 100 90 80 0 10 20 30 dB 50 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 µH 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Feb-27-2004