WTC6401 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.3 AMPERES DRAIN SOURCE VOLTAGE -12 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) R DS(ON) <50mΩ@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package SOURCE 3 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(T =25 C Unless Otherwise Specified) A Rating Symbol Value Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) ID Pulsed Drain Current 1 Total Power Dissipation(T A =25˚C) Maximum Thermal Resistace Junction-ambient 3 Operating Junction and Storage Temperature Range Unit V -4.3 -3.4 A I DM -12 PD 1.38 W R θJA 90 ˚C/W TJ , Tstg - 55~+150 ˚C Device Marking WTC6401=6401 WEITRON http:www.weitron.com.tw 1/6 06-May-05 WTC6401 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max BV DSS -12 - - Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-250μA V Gate-Source Threshold Voltage VDS=VGS,ID=-250μA Gate-Source Leakage current VGS = ±8V VGS(Th) - - -1.0 IGSS - - ±100 - - -1 Drain-Source Leakage Current(Tj=25˚C) VDS =-16V,V GS =0 μA IDSS Drain-Source Leakage Current(Tj=70˚C) nA - - -25 R DS(o n) - - 50 85 125 mΩ g fs - 12 - S C iss - 985 1580 C oss - 180 - Crss - 160 - VDS =-12V,V GS =0 Drain-Source On-Resistance 2 VGS =-4.5V,I D=-4.3A VGS =-2.5V,I D=-2.5A VGS =-1.8V,I D=-2.0A Forward Transconductance VDS =-5.0,I D=-4.0A Dynamic Input Capacitance VGS =0V,VDS =-15V,f=1.0MHz Output Capacitance VGS =0V,VDS =-15V,f=1.0MHz Reverse Transfer Capacitance VGS =0V,VDS =-15V,f=1.0MHz WEITRON http:www.weitron.com.tw 2/6 pF 06-May-05 WTC6401 Switching Turn-on Delay Time 2 td (on) - 8 - Rise Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω, R G =3.3Ω tr - 11 - Turn-off De lay Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω, R G =3.3Ω t d (off) - 54 - Fall Time VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω, R G =3.3Ω tf - 36 - Total Gate Charge 2 VDS =-12V,V GS =-4.5V,I D=-4.0A Qg - 15 24 Gate-Source Charge VDS =-12V,V GS =-4.5V,I D=-4.0A Q gs - 1.3 - Q gd - 4 - VSD - - 1.2 V Trr - 39 - ns Q rr - 26 - nC VDS =-10V,V GS =-10V,I D=-1A,R D=10Ω, R G =3.3Ω ns Gate-Source Change VDS =-12V,V GS =-4.5V,I D=-4.0A nC Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V,IS =-1.2A Reverse Recovery Time 2 VGS =0V,IS =-4.0A, dl/dt=100A/μs Reverse Recovery Charge VGS =0V,IS =-4.0A, dl/dt=100A/μs Note: 1. Pulse width limited by max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad. WEITRON http:www.weitron.com.tw 3/6 06-May-05 WTC6401 14 16 TA=25°C 14 -3.0V 12 -2.5V 10 VG=-1.8V 8 6 4 -4.5V -3.0V 10 -2.5V VG=-1.8V 8 6 4 2 2 0 0 0 1 2 3 4 5 0 6 2 4 6 8 VDS ,Drain-to-source Voltage(V) -VDS ,DRAIN-TO-SOURCE VOLTAGE(V) Fig.2 Typical Output Characteristics FIG.1 Typical Output Characteristics 70 1.6 I D = -3A TA = 25°C I D = -4A VG = -4.5V 1.4 Normalized RDs(on) 60 RDs(on) (mΩ) -5.0V TA=150°C 12 -4.5V ID ,Drain Current (A) -I D ,DRAIN CURRENT (A) -5.0V 50 1.2 1.0 0.8 40 1 3 5 7 VGS ,Gate-to-source Voltage(V) 0.6 -50 9 Fig.3 On-Resistance v.s. Gate Voltage 50 100 150 Fig.4 Normalized OnResistance 3 Normalized -VGS(th)(V) 2.0 2 Tj = 150°C -IS(A) 0 Tj ,Junction Temperature(°C) Tj = 25°C 1 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 0.0 1 -VDS ,Source-to-Drain Voltage(V) http://www.weitron.com.tw 0 50 100 Tj ,Junction Temperature(°C) 150 Fig.6 Gate Threshold Voltage v.s. Junction Temperature Fig.5 Forward Characteristics of Reverse Diode WEITRON -50 4/6 06-May-05 WTC6401 10000 8 -VGS , Gate to Source Voltage(V) I D = -4A f = 1.0MHz VDS = -16V 6 C(pF) 4 1000 Ciss 2 Coss Crss 0 0 8 16 24 10 32 1 Normalized Thermal Response(Rθ ja ) 100,000 10,00 -I D(A) 1ms 1,000 10ms 0.01 100ms 0.1 9 13 17 Fig 8. Typical Capacitance Characteristics Fig 7. Gate Charge Characteristics TA = 25°C Single Pulse 5 VDS, Drain-to-Source Voltage(V) QG , Total Gate Charge(nC) 0.100 1 Is Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM 0.01 t T 0.01 Duty factor = t / T Peak Tj=PDM x Rθ ja + Ta Rθ ja =270°C / W Single pulse DC 1 10 100 0.001 0.0001 0.001 0.01 -VDS , Drain-to-Source Voltage(V) Fig 9. Maximum Safe Operation Area 0.1 1 10 100 1000 t, Pulse Width(s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Fig 11. Switching Time Circuit WEITRON http://www.weitron.com.tw Q Fig.12 Gate Charge Waveform 5/6 06-May-05 WTC6401 SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 06-May-05