INFINEON BAW78D

BAW78A...BAW78D
Silicon Switching Diodes
1
Switching applications
2
High breakdown voltage
3
2
VPS05162
2
1
EHA07007
Type
Marking
Pin Configuration
Package
BAW78A
GA
1=A
2=C
3 = n.c.
SOT89
BAW78B
GB
1=A
2=C
3 = n.c.
SOT89
BAW78C
GC
1=A
2=C
3 = n.c.
SOT89
BAW78D
GD
1=A
2=C
3 = n.c.
SOT89
Maximum Ratings
Parameter
Symbol
BAW
BAW
BAW
BAW
78A
78B
78C
78D
Unit
Diode reverse voltage
VR
50
100
200
400
V
Peak reverse voltage
VRM
50
100
200
400
Forward current
IF
1
Peak forward current
IFM
1
Surge forward current, t = 1 s
IFS
10
Total power dissipation, TS = 125 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
A
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
25
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BAW78A...BAW78D
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC characteristics
V(BR)
Breakdown voltage
I(BR) = 100 µA
V
BAW78A
50
-
-
BAW78B
100
-
-
BAW78C
200
-
-
BAW78D
400
-
-
IF = 1 A
-
-
1.6
IF = 2 A
-
-
2
IR
-
-
1
IR
-
-
50
CD
-
10
-
pF
trr
-
1
-
µs
VF
Forward voltage
Reverse current
µA
VR = VRmax
Reverse current
VR = VRmax , TA = 150 °C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA, RL = 100 ,
measured at IR = 20mA
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 10µs, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
2
Aug-20-2001
BAW78A...BAW78D
Forward current IF = f (TS )
Forward current IF = f (V F)
TA = 25°C
BAW 78A...D
10 1
1200
ΙF
EHB00095
A
mA
10 0
IF
800
10 -1
600
400
10 -2
200
0
0
25
50
75
100
°C
10 -3
150
0
1
V
TS
VF
Peak forward current IFM = f (tp )
Reverse current IR = f (TA)
TA = 25°C
VR = VRmax
10 2
Ι FM
BAW 78A...D
EHB00096
D = 0.005
0.01
0.02
0.05
0.1
0.2
A
10 1
2
ΙR
10 5
nA
BAW 78A...D
EHB00097
max
10 4
5
10 0
typ.
10 3
5
10 -1
10 2
tp
D=
T
tp
5
T
10-2
10-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
10 1
0
0
50
100
˚C
150
TA
t
3
Aug-20-2001