IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS®-T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) PG-TO262-3-1 PG-TO220-3-1 • Avalanche tested • ESD Class 2 (HBM) EIA/JESD22-A114-B Type Package Ordering Code Marking IPB77N06S3-09 PG-TO263-3-2 SP0000-88715 3N0609 IPI77N06S3-09 PG-TO262-3-1 SP0000-88716 3N0609 IPP77N06S3-09 PG-TO220-3-1 SP0000-88717 3N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 77 Unit A 55 Pulsed drain current2) I D,pulse T C=25 °C 308 Avalanche energy, single pulse3) E AS I D=38 A 170 Drain gate voltage2) V DG 55 Gate source voltage4) V GS ±20 V Power dissipation P tot 107 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 0.9 mJ 55/175/56 page 1 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - 1.4 Thermal resistance, junction ambient, leaded R thJA - - 62 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area5) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=55 µA 2.1 3 4 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 100 V DS=25 V, V GS=0 V, T j=125 °C1) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=39 A - 7.7 9.1 mΩ V GS=10 V, I D=39 A, SMD version - 7.4 8.8 Rev. 0.9 page 2 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Parameter Values Symbol Conditions Unit min. typ. max. - 5335 - - 812 - Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 775 - Turn-on delay time t d(on) - 29 - Rise time tr - 51 - Turn-off delay time t d(off) - 29 - Fall time tf - 51 - Gate to source charge Q gs - 41 - Gate to drain charge Q gd - 17 - Gate charge total Qg - 77 103 Gate plateau voltage V plateau - 7.1 - V - - 77 A - - 308 V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=77 A, R G=10 Ω pF ns Gate Charge Characteristics2) V DD=11 V, I D=77 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current2) I S,pulse Diode forward voltage2) V SD V GS=0 V, I F=77 A, T j=25 °C - 1 1.3 V Reverse recovery time2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs - 43 - ns Reverse recovery charge2) Q rr - 58 - nC T C=25 °C 1) Current is limited by bondwire; with an R thJC = 1.4 K/W the chip is able to carry 77A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 0.9 page 3 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 120 100 100 80 80 I D [A] P tot [W] 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs limited by on-state resistance 100 10 µs 100 0.5 0.2 Z thJC [K/W] I D [A] 100 µs 1 ms 0.1 10-1 0.05 0.02 10 10-2 0.01 single pulse 10-3 1 0.1 1 10 100 V DS [V] Rev. 0.9 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS, pulsed parameter: V GS 25 160 7V 10 V 140 120 20 8V R DS(on) [mΩ] I D [A] 100 80 7V 60 15 8V 6.5 V 40 9V 10 6V 5.5 V 20 10V 5 0 0 1 2 0 3 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Drain-source on-state resistance I D=f(V GS); V DS=10 V R DS(on)=f(T j); I D=77 A; V GS=10 V parameter: T j 20 200 18 16 -55 °C 150 R DS(on) [mΩ] I D [A] 14 25 °C 100 10 8 6 175 °C 50 12 4 2 0 0 2 3 4 5 6 7 8 Rev. 0.9 -60 -20 20 60 100 140 180 T j [°C] V GS [V] page 5 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th)=f(T j); V GS=V DS C =f(V DS); V GS=0 V; f =1 MHz parameter: I D 104 4 Ciss 3.5 600µA 3 Coss 60µA C [pF] V GS(th) [V] 2.5 2 Crss 103 1.5 1 0.5 102 0 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 25 30 V DS [V] 11 Forward characteristics of reverse diode 12 Typ. avalanche characteristics I F=f(V SD), pulsed I AS=f(t AV) parameter: T j parameter: T j(start) 100 1000 25°C 100 175 °C I AV [A] I F [A] 100°C 25 °C 150°C 10 10 1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V SD [V] Rev. 0.9 1 10 100 1000 t AV [µs] page 6 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 13 Typ. avalanche energy 15 Drain-source breakdown voltage E AS=f(T j ) V BR(DSS)=f(T j); I D=1 mA parameter: I D 66 350 20 A 64 300 62 250 60 V BR(DSS) [V] E AS [mJ] 30 A 200 38 A 150 58 56 54 52 100 50 50 48 46 0 0 50 100 150 -60 200 -20 20 T j [°C] 60 100 140 180 T j [°C] 14 Typ. gate charge 16 Gate charge waveforms V GS=f(Q gate); I D=77 A pulsed parameter: V DD 12 V GS 44 V 11 V 10 Qg V GS [V] 8 6 4 2 Q gate Q gs 0 0 20 40 60 80 100 Q gd 120 Q gate [nC] Rev. 0.9 page 7 2005-09-16 IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.9 page 8 2005-09-16