INFINEON IPD50N06S2-14

IPD50N06S2-14
OptiMOS® Power-Transistor
Product Summary
Features
V DS
• N-channel - Enhancement mode
55
R DS(on),max (SMD version)
• Automotive AEC Q101 qualified
ID
V
14.4
mΩ
50
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO252-3-11
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPD50N06S2-14
PG-TO252-3-11
PN0614
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Value
501)
Unit
A
49
Pulsed drain current2)
I D,pulse
T C=25 °C
200
Avalanche energy, single pulse
E AS
I D=50A
240
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
136
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.1
55/175/56
page 1
2008-10-21
IPD50N06S2-14
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
1.1
Thermal resistance, junction ambient, leaded
R thJA
-
-
100
SMD version, device on PCB
R thJA
minimal footprint
-
-
75
6 cm2 cooling area3)
-
-
50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=80 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=55 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=32 A,
-
10.8
14.4
mΩ
Rev. 1.1
page 2
2008-10-21
IPD50N06S2-14
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
1485
-
-
464
-
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
167
-
Turn-on delay time
t d(on)
-
13
-
Rise time
tr
-
29
-
Turn-off delay time
t d(off)
-
30
-
Fall time
tf
-
19
-
Gate to source charge
Q gs
-
8
11
Gate to drain charge
Q gd
-
16
24
Gate charge total
Qg
-
39
52
Gate plateau voltage
V plateau
-
5.4
-
V
-
-
50
A
-
-
200
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=50 A, R G=7.5 Ω
pF
ns
Gate Charge Characteristics2)
V DD=44 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
1
1.3
V
Reverse recovery time2)
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
-
45
-
ns
Reverse recovery charge2)
Q rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
-
74
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an RthJC=1.1 K/W the chip is able to carry 69 A. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2008-10-21
IPD50N06S2-14
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 10 V
160
50
140
120
40
I D [A]
P tot [W]
100
80
60
30
20
40
10
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
1 µs
100
100
Z thJC [K/W]
10 µs
I D [A]
100 µs
1 ms
0.1
10-1
0.05
0.02
10
0.01
-2
10
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.1
10-7
page 4
2008-10-21
IPD50N06S2-14
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
200
50
10 V
6V
5.5 V
160
7V
40
R DS(on) [mΩ]
120
I D [A]
6.5 V
80
6V
20
5.5 V
40
30
6.5 V
5V
7V
0
0
1
2
3
4
5
6
10 V
10
7
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
100
80
90
70
80
60
70
50
g fs [S]
I D [A]
60
50
40
40
30
30
20
20
10
10
175 °C
25 °C
-55 °C
0
0
2
3
4
5
6
7
Rev. 1.1
0
20
40
60
I D [A]
V GS [V]
page 5
2008-10-21
IPD50N06S2-14
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 32 A; VGS = 10 V
parameter: I D
30
4
25
3.5
20
3
400 µA
V GS(th) [V]
R DS(on) [mΩ]
9 Typ. Drain-source on-state resistance
15
80 µA
2.5
10
2
5
1.5
0
1
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
102
I F [A]
C [pF]
Ciss
103
Coss
101
175 °C
25 °C
Crss
102
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD [V]
page 6
2008-10-21
IPD50N06S2-14
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 50 A pulsed
parameter: I D
12
1000
12.5 A
10
800
8
11 V
V GS [V]
E AS [mJ]
600
25 A
44 V
6
400
4
50 A
200
2
0
0
25
50
75
100
125
150
0
175
10
20
T j [°C]
30
40
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
66
V GS
64
Qg
62
V BR(DSS) [V]
60
58
56
54
Q gate
52
Q gs
Q gd
50
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.1
page 7
2008-10-21
IPD50N06S2-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2008
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1
page 8
2008-10-21
IPD50N06S2-14
Revision History
Version
Date
Changes
Correction of RthJC from 3.4K/W
20.10.2008 to 1.1K/W
Revision 1.1
Rev. 1.1
page 9
2008-10-21