INFINEON IPD22N08S2L-50

IPD22N08S2L-50
OptiMOS® Power-Transistor
Product Summary
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
V DS
75
V
R DS(on),max
50
mΩ
ID
25
A
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
PG-TO252-3-11
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
Marking
IPD22N08S2L-50
PG-TO252-3-11
2N08L50
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Value
27
Unit
A
19
Pulsed drain current1)
I D,pulse
T C=25 °C
108
Avalanche energy, single pulse
E AS
I D=22A
94
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
75
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2006-07-18
IPD22N08S2L-50
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
-
-
2
Thermal resistance, junction ambient, leaded
R thJA
-
-
100
SMD version, device on PCB
R thJA
minimal footprint
-
-
75
6 cm2 cooling area2)
-
-
50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
75
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=31 µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
0.01
1
-
1
100
V DS=75 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=5 V, I D=50 A
-
58.0
65
mΩ
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=50 A,
-
38.5
50.0
mΩ
Rev. 1.0
page 2
2006-07-18
IPD22N08S2L-50
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
630
-
-
160
-
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
75
-
Turn-on delay time
t d(on)
-
6
-
Rise time
tr
-
20
-
Turn-off delay time
t d(off)
-
26
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
2
2.7
Gate to drain charge
Q gd
-
9
12
Gate charge total
Qg
-
21
33
Gate plateau voltage
V plateau
-
3.9
-
V
-
-
25
A
-
-
100
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=37 V, V GS=10 V,
I D=22 A, R G=9.1 Ω
pF
ns
Gate Charge Characteristics1)
V DD=60 V, I D=22 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=22 A,
T j=25 °C
-
0.9
1.3
V
Reverse recovery time1)
t rr
V R=40 V, I F=I S,
di F/dt =100 A/µs
-
44
-
ns
Reverse recovery charge1)
Q rr
V R=40 V, I F=I S,
di F/dt =100 A/µs
-
66
-
nC
1)
T C=25 °C
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-07-18
IPD22N08S2L-50
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 10 V
80
30
70
25
60
20
I D [A]
P tot [W]
50
40
15
30
10
20
5
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
0.5
0
10
1 µs
100
Z thJC [K/W]
0.1
I D [A]
10 µs
100 µs
0.05
-1
10
0.01
1 ms
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-7
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2006-07-18
IPD22N08S2L-50
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = (I D); T j = 25 °C
parameter: V GS
parameter: V GS
100
170
4V
3.5 V
10 V
3V
150
130
RDS(on) [mW]
I D [A]
5V
50
4.5 V
110
4.5 V
90
70
4V
50
3.5 V
5V
3V
10 V
2.5 V
0
0
2
4
6
8
30
0
10
10
20
40
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. Forward transconductance
I D = f(V GS); V DS = 6V
g fs = f(I D); T j = 25°C
parameter: T j
parameter: g fs
80
40
60
30
g fs [S]
I D [A]
30
40
20
20
10
25 °C
175 °C
-55 °C
0
0
1
2
3
4
5
V GS [V]
Rev. 1.0
0
10
20
30
40
I D [A]
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2006-07-18
IPD22N08S2L-50
9 Typ. Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(ON) = f(T j)
V GS(th) = f(T j); V GS = V DS
parameter: I D = 11 A; VGS = 10 V
parameter: I D
90
2.5
80
2
70
60
V GS(th) [V]
R DS(on) [mΩ]
155 µA
50
1.5
31 µA
1
40
0.5
30
20
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
60
100
140
180
T j [°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C = f(V DS); V GS = 0 V; f = 1 MHz
IF = f(VSD)
parameter: T j
104
103
103
102
I F [A]
C [pF]
Ciss
Coss
2
101
10
Crss
175 °C
25 °C
0.6
0.8
100
0
5
10
15
20
25
30
V DS [V]
Rev. 1.0
0
0.2
0.4
1
1.2
1.4
1.6
V SD [V]
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2006-07-18
IPD22N08S2L-50
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 22 A pulsed
parameter: I D
400
12
5.5 A
350
15 V
10
60 V
300
8
200
V GS [V]
E AS [mJ]
250
11 A
6
150
4
100
22 A
2
50
0
0
25
75
125
175
0
10
T j [°C]
20
30
Q gate [nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
90
V GS
Qg
V BR(DSS) [V]
85
80
75
70
Q gate
Q gs
Q gd
65
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-07-18
IPD22N08S2L-50
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-07-18