BUP 410D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Pin 3 C E Type VCE IC Package Ordering Code BUP 410D 600V 13A TO-220 AB Q67040-A4425-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 600 V 600 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 13 TC = 90 °C 8 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 26 TC = 90 °C 16 IF Diode forward current TC = 90 °C 11 Pulsed diode current, tp = 1 ms IFpuls TC = 25 °C 72 Ptot Power dissipation TC = 25 °C W 50 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group Unit 1 °C Dec-12-1996 BUP 410D Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values E Unit - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC ≤ 2.5 Diode thermal resistance, chip case RthJCD 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA, Tj = 25 °C V 4.5 5.5 6.5 VGE = 15 V, IC = 6 A, Tj = 25 °C - 2.1 2.7 VGE = 15 V, IC = 6 A, Tj = 125 °C - 2.2 2.8 VGE = 15 V, IC = 12 A, Tj = 25 °C - 3 - VGE = 15 V, IC = 12 A, Tj = 125 °C - 3.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current - - 80 IGES VGE = 25 V, VCE = 0 V Semiconductor Group µA nA - 2 - 100 Dec-12-1996 BUP 410D AC Characteristics Transconductance gfs VCE = 20 V, IC = 6 A Input capacitance 2 pF - 320 430 - 40 60 - 25 40 Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Ω Rise time - 20 35 - 60 90 - 175 240 - 160 220 tr VCC = 300 V, VGE = 15 V, IC = 6 A RGon = 100 Ω Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Ω Fall time tf VCC = 300 V, VGE = -15 V, IC = 6 A RGoff = 100 Ω Semiconductor Group 3 Dec-12-1996 BUP 410D Free-Wheel Diode Diode forward voltage VF IF = 10 A, VGE = 0 V, Tj = 25 °C Reverse recovery time V - 1.65 - trr ns IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/µs - - - Tj = 25 °C - 60 100 Tj = 125 °C - 100 150 Reverse recovery charge Qrr µC IF = 10 A, VR = -300 V, VGE = 0 V diF/dt = -100 A/µs Tj = 25 °C - 0.2 0.37 Tj = 125 °C - 0.4 0.74 Semiconductor Group 4 Dec-12-1996 BUP 410D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Ptot Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 55 12 W A 10 45 IC 40 9 8 35 7 30 6 25 5 20 4 15 3 10 2 5 1 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 IGBT 10 1 tp = 1.4µs A K/W IC 10 1 ZthJC 10 µs 10 0 100 µs 10 0 1 ms D = 0.50 0.20 10 ms 10 -1 0.10 0.05 10 -1 0.02 DC single pulse 10 -2 0 10 10 1 10 2 V 10 10 -2 -5 10 3 VCE Semiconductor Group 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 5 Dec-12-1996 BUP 410D Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 12 12 A 10 IC 9 8 A 17V 15V 13V 11V 9V 7V 10 IC 9 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 12 A 10 IC 9 8 7 6 5 4 3 2 1 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 6 Dec-12-1996 BUP 410D Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω par.: VCE = 300 V, VGE = ± 15 V, IC = 6 A 10 3 10 3 t t ns tdoff ns tf tdoff 10 10 2 2 tr tf tr tdon tdon 10 1 0 3 6 9 A 10 1 0 15 50 100 150 200 Ω IC Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300V, VGE = ± 15 V, IC = 6 A 1.0 E 300 RG 0.5 mWs E mWs Eoff Eoff 0.6 Eon 0.3 Eon 0.4 0.2 0.2 0.1 0.0 0.0 0 3 6 9 A 15 0 IC Semiconductor Group 7 50 100 150 200 Ω 300 RG Dec-12-1996 BUP 410D Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 6 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 100 V 14 300 V 10 0 12 Ciss 10 8 10 -1 6 Coss Crss 4 2 0 0 4 8 12 16 20 26 10 -2 0 5 10 15 20 25 30 QGate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 V 40 VCE 2.5 ICsc/IC(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 8 0 100 200 300 400 500 600 V 800 VCE Dec-12-1996 BUP 410D Typ. forward characteristics Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IF = f (VF) parameter: Tj Diode 10 1 16 A K/W IF ZthJC 12 10 0 10 Tj=125°C Tj=25°C 8 D = 0.50 0.20 6 10 -1 0.10 0.05 4 0.02 single pulse 0.01 2 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF Semiconductor Group 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 9 Dec-12-1996