INFINEON BSP298_07

BSP 298
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
Pin 1
G
Pin 2
Pin 3
D
Type
VDS
ID
RDS(on)
Package
Marking
BSP 298
400 V
0.5 A
3Ω
SOT-223
BSP 298
Type
BSP 298
Pb-free
Yes
Pin 4
S
D
Tape and Reel Information
E6327
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TA = 26 °C
Values
Unit
A
0.5
DC drain current, pulsed
IDpuls
2
TA = 25 °C
Avalanche energy, single pulse
mJ
E AS
ID = 1.35 A, VDD = 50 V, RGS = 25 Ω
L = 125 mH, Tj = 25 °C
130
Gate source voltage
V GS
Power dissipation
P tot
TA = 25 °C
Rev. 2.2 Semiconductor Group
± 20
V
W
1.8
1
2007-02-26
BSP 298
Maximum Ratings
Parameter
Symbol
Values
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air
RthJA
≤ 70
Therminal resistance, junction-soldering point 1)
RthJS
≤ 10
DIN humidity category, DIN 40 040
Unit
°C
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 0 °C
Gate threshold voltage
400
-
-
2.1
3
4
V GS(th)
V GS=V DS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
V DS = 400 V, V GS = 0 V, Tj = 25 °C
-
0.1
1
V DS = 400 V, V GS = 0 V, Tj = 125 °C
-
10
100
Gate-source leakage current
nA
IGSS
V GS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
100
Ω
RDS(on)
V GS = 10 V, ID = 0.5 A
Rev. 2.2 Semiconductor Group
10
-
2
2.2
3
2007-02-26
BSP 298
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
S
gfs
V DS≥ 2 * ID * RDS(on)max, ID = 0.5 A
Input capacitance
0.5
pF
300
400
-
50
75
-
20
30
Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
1.2
ns
td(on)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rise time
-
10
15
-
25
40
-
30
40
-
20
30
tr
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Turn-off delay time
td(off)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Fall time
tf
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rev. 2.2 Semiconductor Group
3
2007-02-26
BSP 298
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
A
IS
TA = 25 °C
Inverse diode direct current,pulsed
-
2
-
0.95
1.2
ns
trr
-
300
µC
Qrr
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Rev. 2.2 Semiconductor Group
-
V
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
0.5
V SD
V GS = 0 V, IF = 1 A, Tj = 25 °C
Reverse recovery time
-
ISM
TA = 25 °C
Inverse diode forward voltage
-
-
4
2.5
-
2007-02-26
BSP 298
Power dissipation
Ptot = ƒ(TA)
Ptot
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
2.0
0.55
W
A
1.6
ID
0.45
0.40
1.4
0.35
1.2
0.30
1.0
0.25
0.8
0.20
0.6
0.15
0.4
0.10
0.2
0.05
0.0
0.00
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
TA
120
°C
160
TA
Safe operating area ID=f(VDS)
Transient thermal impedance
Zth JA = ƒ(tp )
parameter: D = tp / T
parameter : D = 0, TC=25°C
10 2
K/W
10 1
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10 -4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Rev. 2.2 Semiconductor Group
5
2007-02-26
BSP 298
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
l
1.2
10
Ptot = 2W j
f
ih
d
ge
kc
A
Ω
b
VGS [V]
1.0
ID
0.9
0.8
0.7
0.6
a
0.5
0.4
0.3
a
4.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
k
10.0
l
20.0
RDS (on)
a
8
7
6
5
4
b
3
l
2
d figc ke
jh
0.2
1
0.1
0.0
VGS [V] =
a
4.0
b
4.5
c
5.0
d
5.5
e
f
6.0 6.5
g
7.0
h
i
7.5 8.0
j
9.0
0
0
1
2
3
4
5
6
7
8
V
10
0.00
0.10
0.20
0.30
0.40
A
VDS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
parameter: tp = 80 µs,
2.6
2.6
A
S
2.2
D
0.60
ID
Typ. transfer characteristics ID = f(VGS)
I
k
l
10.0 20.0
2.2
g
2.0
fs
2.0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
1
2
3
4
5
6
7
8
V
10
0.0
VGS
Rev. 2.2 Semiconductor Group
0.4
0.8
1.2
1.6
A
2.2
ID
6
2007-02-26
BSP 298
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 0.5 A, VGS = 10 V
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
7.5
4.6
Ω
V
6.5
4.0
RDS (on) 6.0
VGS(th)
98%
3.6
5.5
typ
3.2
5.0
2.8
4.5
4.0
2.4
98%
2%
3.5
2.0
3.0
typ
2.5
1.6
2.0
1.2
1.5
0.8
1.0
0.4
0.5
0.0
0.0
-60
-20
20
60
100
°C
160
-60
-20
20
60
100
°C
Tj
160
Tj
Typ. capacitances
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
10 1
nF
A
IF
C
10 0
10 0
Ciss
10 -1
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Coss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
Crss
10 -2
0
5
10
15
20
25
30
V
40
VDS
Rev. 2.2 Semiconductor Group
10 -2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
7
2007-02-26
BSP 298
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.35 A, VDD = 50 V
RGS = 25 Ω, L = 125 mH
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
140
480
mJ
V
120
EAS
460
V(BR)DSS
450
110
100
440
90
80
430
70
420
60
410
50
400
40
390
30
380
20
370
10
0
20
360
40
60
80
100
120
°C
160
-60
Tj
-20
20
60
100
°C
160
Tj
Safe operating area ID=f(VDS)
parameter : D = 0.01, TC=25°C
Rev. 2.2 Semiconductor Group
8
2007-02-26
BSP 298
Package outlines
SOT-223
Dimensions in mm
Rev. 2.2 Semiconductor Group
9
2007-02-26