1N6138AUS – 1N6173AUS Available on commercial versions Voidless Hermetically Sealed Surface Mount Bidirectional Transient Voltage Suppressors Qualified to MIL-PRF-19500/516 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This surface mount series of industry recognized voidless, hermetically sealed, bidirectional Transient Voltage Suppressor (TVS) designs are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability applications where a failure cannot be tolerated. They provide a working peak “standoff” voltage selection from 5.2 to 152 volts with a 1500 watt rating for a 10/1000 us pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability. These are also available as both a non suffix part and an “A” version part involving different voltage tolerances as further described in the nomenclature section. These devices are also available in axial-leaded packages for thru-hole mounting. Also available in: Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • • • • • “C” or SQ-MELF Package “C” Package High surge current and peak pulse power provides transient voltage protection for sensitive circuits Triple-layer passivation Internal “Category 1” metallurgical bonds Voidless hermetically sealed glass package JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516. (See part nomenclature for all available options.) RoHS compliant versions available (commercial grade only) (axial-leaded) 1N6138 – 1N6173 APPLICATIONS / BENEFITS • • • • • • • • • Military and other high-reliability applications Extremely robust construction Extensive range in working peak “standoff” voltage (V WM ) from 5.2 to 152 volts 1500 watt peak pulse power (P PP ) for a 10/1000 us pulse ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively Protection from the secondary effects of lightning per select levels in IEC61000-4-5 Square-end-cap terminals for easy placement Non-sensitive to ESD per MIL-STD-750 method 1020 Inherently radiation hard as described in Microsemi “MicroNote 050” MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted. Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-End Cap Peak Pulse Power @ 25 ºC (10/1000 µs) o (1) Off-State Power up to TEC = 150 C o (2) Off-State Power @ TA = 25 C Impulse Repetition Rate Solder Temperature @ 10 s Notes: 1. 2. Symbol Value TJ and TSTG R ӨJEC P PP -55 to +175 5.0 1500 PD PD df TSP 5.0 3.0 0.01 260 Unit o C C/W W o W W % o C Linearly derate above T EC =150 oC to zero at T EC =175 oC. Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T OP or T J(MAX) is not exceeded (also see figure 6). T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 7 1N6138AUS – 1N6173AUS MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs TERMINALS: Tin/lead plate over copper. RoHS compliant matte-tin is available on commercial grade only. MARKING: None POLARITY: No polarity marking for these bidirectional TVSs TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: Approximately 1100 milligrams See package dimensions on last page. PART NOMENCLATURE JAN 1N6138 A US e3 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number See Electrical Characteristics table Voltage Tolerance A = Standard Blank =5% higher V C , 5% lower min. V (BR) and 5% lower I PP SYMBOLS & DEFINITIONS Definition Symbol α V(BR) V (BR) V WM ID VC P PP Surface Mount Package Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. Standby Current: The current through the device at rated stand-off voltage. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (I PP ) for a specified waveform. Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The impulse power is the maximum-rated value of the product of I PP and V C . T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 2 of 7 1N6138AUS – 1N6173AUS ELECTRICAL CHARACTERISTICS INDUSTRY TYPE NUMBER (Note 1) 1N6138AUS 1N6139AUS 1N6140AUS 1N6141AUS 1N6142AUS 1N6143AUS 1N6144AUS 1N6145AUS 1N6146AUS 1N6147AUS 1N6148AUS 1N6149AUS 1N6150AUS 1N6151AUS 1N6152AUS 1N6153AUS 1N6154AUS 1N6155AUS 1N6156AUS 1N6157AUS 1N6158AUS 1N6159AUS 1N6160AUS 1N6161AUS 1N6162AUS 1N6163AUS 1N6164AUS 1N6165AUS 1N6166AUS 1N6167AUS 1N6168AUS 1N6169AUS 1N6170AUS 1N6171AUS 1N6172AUS 1N6173AUS MINIMUM BREAKDOWN VOLTAGE (Note 1) V (BR) @ I (BR) Volts 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.0 20.9 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95.0 104.5 114.0 123.5 142.5 152.0 171.0 190.0 mA 175 175 150 150 125 125 100 100 75 75 65 65 50 50 50 40 40 30 30 30 25 25 20 20 20 20 15 15 12 12 10 10 8 8 5 5 RATED STANDOFF VOLTAGE MAXIMUM STANDBY CURRENT V WM I D @ V WM V 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0 86.6 91.2 98.8 114.0 121.6 136.8 152.0 µA 500 300 100 100 100 20 20 20 20 20 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAXIMUM CLAMPING VOLTAGE (Note 1) V C @ I PP Volts 10.5 11.2 12.1 13.4 14.5 15.6 16.9 18.2 21.0 22.3 25.1 27.7 30.5 33.3 37.4 41.6 45.7 49.9 53.6 59.1 64.6 70.1 77.0 85.3 97.1 103.1 112.8 125.1 137.6 151.3 165.1 178.8 206.3 218.4 245.7 273.0 MAXIMUM PEAK PULSE CURRENT (Note 1) I PP MAXIMUM TEMP. COEF. OF V (BR) α V(BR) Amps 142.8 133.9 124.0 111.9 103.4 96.2 88.8 82.4 71.4 67.3 59.8 54.2 49.2 45.0 40.1 36.0 32.8 30.1 28.0 25.4 23.2 21.4 19.5 17.6 15.4 14.5 13.3 12.0 10.9 9.9 9.1 8.4 7.3 6.9 6.1 5.5 %/oC 0.05 0.06 0.06 0.06 0.07 0.07 0.07 0.08 0.08 0.08 0.085 0.085 0.085 0.09 0.09 0.09 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.100 0.100 0.100 0.100 0.100 0.100 0.100 0.100 0.105 0.105 0.105 0.110 0.110 Notes: 1. Part number without the A suffix has 5% higher V C , 5% lower minimum V (BR) , and 5% lower I PP . T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 3 of 7 1N6138AUS – 1N6173AUS Peak Pulse Power (PPP) GRAPHS Pulse Time (t p ) Max Peak Pulse Power (PPP) or current (IPP) in percent of Max Ratings FIGURE 1 Peak Pulse Power vs. Pulse Time Junction Temperature (T J ) in °C FIGURE 2 Peak Pulse Power vs T J (prior to impulse) T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 4 of 7 1N6138AUS – 1N6173AUS Pulse Current (IPP) in Percent of IPP GRAPHS Time (t) in milliseconds DC Operation (W) Maximum Rating FIGURE 3 Pulse Wave Form T A (°C) (Ambient) FIGURE 4 Temperature-Power Derating Curve T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 5 of 7 1N6138AUS – 1N6173AUS Maximum Steady-State Power in Watts GRAPHS Ambient Temperature (T A ) in °C FIGURE 5 Steady-State Derating Curve for Free-Air Mounting (RθJA = 50 ºC/W) T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 6 of 7 1N6138AUS – 1N6173AUS PACKAGE DIMENSIONS Ltr BD BL ECT S Dimensions Inch Millimeters Min Max Min Max 0.183 0.202 4.65 5.13 0.205 0.245 5.21 6.22 0.019 0.028 0.48 0.71 0.003 0.08 - Notes 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Minimum clearance of glass body to mounting surface on all orientations. 4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. PAD LAYOUT DIM A1 A2 B C INCH 0.310 0.170 0.070 0.205 MILLIMETERS 7.87 4.32 1.78 5.21 NOTE: If mounting requires adhesive separate from the solder, an additional 0.090 inch (2.29 mm) diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-0278-1, Rev. 2 (11/19/13) ©2013 Microsemi Corporation Page 7 of 7