1N5415US thru 1N5420US Available on commercial versions VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS Qualified Levels: JAN, JANTX, JANTXV and JANS Qualified per MIL-PRF-19500/411 DESCRIPTION This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. “B” SQ-MELF (D-5B) Package FEATURES • • • • • • • Surface mount equivalent of JEDEC registered 1N5415 thru 1N5420 series. Voidless hermetically sealed glass package. Quadruple-layer passivation. Internal “Category 1” metallurgical bonds. Working peak reverse voltage 50 to 600 volts. JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411. RoHS compliant versions available (commercial grade only). • • • • • • • • Fast recovery 3 amp 50 to 600 volt rectifiers. Military and other high-reliability applications. General rectifier applications including bridges, half-bridges, catch diodes, etc. High forward surge current capability. Extremely robust construction. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi “MicroNote 050”. Also available in: “B” Package (axial-leaded) 1N5415 – 1N5420 APPLICATIONS / BENEFITS MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-End Cap Forward Surge Current @ 8.3 ms half-sine (3) o Average Rectified Forward Current @ TA = +55 C @ TA = +100 o C Working Peak Reverse Voltage 1N5415US 1N5416US 1N5417US 1N5418US 1N5419US 1N5420US (5) Maximum Reverse Recovery Time 1N5415US 1N5416US 1N5417US 1N5418US 1N5419US 1N5420US Solder Temperature @ 10 s Symbol Value TJ and TSTG R ӨJEC I FSM (1, 2) IO (2) IO -65 to +175 6.5 80 3 2 V RWM 50 100 200 400 500 600 150 150 150 150 250 400 260 t rr TSP Unit o C C/W A A o V MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 ns MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 o Website: www.microsemi.com C See notes on next page. T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 1 of 5 1N5415US thru 1N5420US MAXIMUM RATINGS Notes: 1. Derate linearly at 22 mA/oC for 55 oC < T A < 100 oC. o o o 2. Above T A = 100 C, derate linearly at 26.7 mA/ C to zero at T A = 175 C. 3. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T J(max) does not exceed 175 oC. MECHANICAL and PACKAGING • • • • • • • CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: End caps are copper with tin/lead (Sn/Pb) finish. Note: Previous inventory had solid silver with tin/lead (Sn/Pb) finish. RoHS compliant matte-tin is available for commercial grade only. MARKING: Cathode band only. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Contact factory for quantities. WEIGHT: 539 milligrams. See Package Dimensions and recommended Pad Layout on last page. PART NOMENCLATURE JAN 1N5415 US (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant MELF Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Definition Symbol V BR V RWM IO VF IR t rr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 2 of 5 1N5415US thru 1N5420US ELECTRICAL CHARACTERISTICS MINIMUM BREAKDOWN VOLTAGE FORWARD VOLTAGE TYPE MAXIMUM REVERSE CURRENT I R @ V RWM VF @ 9 A V BR @ 50 µA 1N5415US 1N5416US 1N5417US 1N5418US 1N5419US 1N5420US Volts 55 110 220 440 550 660 CAPACITANCE C VR @ 4 V MIN. Volts MAX. Volts 25 C µA o 100 C µA o pF 0.6 0.6 0.6 0.6 0.6 0.6 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 20 20 20 20 20 20 550 430 250 165 140 120 NOTE 1: I F = 0.5 A, I RM = 1 A, I R(REC) = 0.250 A. T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 3 of 5 1N5415US thru 1N5420US ZӨJX (oC/Watt) IF – Current (µA) GRAPHS % PIV Heating Time (sec) FIGURE 2 Maximum Thermal Impedance IF – Current (A) FIGURE 1 Typical Reverse Current vs. PIV V F – Voltage (V) FIGURE 3 Typical Forward Current vs. Forward Voltage T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 4 of 5 1N5415US thru 1N5420US PACKAGE DIMENSIONS INCH MILLIMETERS MIN MAX MIN MAX BL 0.200 0.225 5.08 5.72 BD 0.137 0.148 3.48 3.76 ECT 0.019 0.028 0.48 0.71 S 0.003 --- 0.08 --- NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. Dimensions are pre-solder dip. 4. Minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 6. This package outline has also previously been identified as “D-5B”. PAD LAYOUT INCH MILLIMETERS A 0.288 7.32 B 0.070 1.78 C 0.155 3.94 Note: If mounting requires adhesive separate from the solder, an additional 0.080 inch diameter contact may be placed in the center between the pads as an optional spot for cement. T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 5 of 5