SPICE Device Model SiZ300DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to + 125 °C Temperature Range • Model the Gate Charge SUBCIRCUIT MODEL SCHEMATIC S1/D2 D1 D D R1 3 M2 G G1 Rg G G2 CGS R1 3 M2 DBD Rg M1 CGS DBD M1 S S S2 Note • This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. S13-2299-Rev. A, 04-Nov-13 1 Document Number: 63845 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ300DT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL SIMULATED MEASURED DATA DATA TEST CONDITIONS UNIT Static Gate-Source Threshold Voltage Drain-Source On-State Resistancea VGS(th) RDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD VDS = VGS, ID = 250 μA Ch-1 1.6 - Ch-2 1.5 - VGS = 10 V, ID = 9.8 A Ch-1 0.020 0.020 VGS = 10 V, ID = 15 A Ch-2 0.009 0.009 VGS = 4.5 V, ID = 8.5 A Ch-1 0.0265 0.0265 VGS = 4.5 V, ID = 12 A Ch-2 0.0150 0.0135 VDS = 10 V, ID = 9.8 A Ch-1 26 30 VDS = 10 V, ID = 15 A Ch-2 25 30 IS = 8 A, VGS = 0 V Ch-1 0.84 0.84 IS = 10 A, VGS = 0 V Ch-2 0.82 0.82 Ch-1 397 400 Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 716 730 Ch-1 127 125 Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-2 157 155 Ch-1 24 25 Ch-2 66 65 Channel-1 VDS = 15 V, VGS = 10 V, ID = 9.8 A Ch-1 6.2 7.4 Channel-2 VDS = 15 V, VGS = 10 V, ID = 15 A Ch-2 12 14.2 Ch-1 3 3.5 Ch-2 6 6.8 Ch-1 1.5 1.5 Ch-2 2.2 2.2 Ch-1 1.1 1.1 Ch-2 2.3 2.3 V S V Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss Crss Qg Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 9.8 A Gate-Source Charge Gate-Drain Charge Qgs Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 15 A pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. S13-2299-Rev. A, 04-Nov-13 2 Document Number: 63845 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ300DT www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Channel-1 MOSFET 30 20 TJ = 125 °C 25 16 ID - Drain Current (A) ID - Drain Current (A) VGS = 10 V, 7 V, 6 V, 5 V, 4 V 20 15 10 8 Tj = - 55 °C 4 VGS = 3 V 5 12 TJ = 25 °C 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) 0.05 2.0 2.5 3.0 3.5 4.0 600 500 C - Capacitance (pF) 0.04 RDS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) VGS = 4.5 V 0.03 0.02 VGS = 10 V Ciss 400 300 200 Coss 0.01 100 Crss 0.00 0 0 5 10 15 20 25 30 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 10 100 ID = 11 A TJ = 150 °C IS - Source Current (A) VGS - Gate-to-Source Voltage (V) VDS = 15 V 8 6 4 10 TJ = 25 °C 1 2 0.1 0 0 2 4 6 0 8 Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. S13-2299-Rev. A, 04-Nov-13 3 Document Number: 63845 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SPICE Device Model SiZ300DT www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted Channel-2 MOSFET 40 20 VGS = 10 V, 7 V, 6 V, 5 V, 4 V TJ = 125 °C 35 16 ID - Drain Current (A) ID - Drain Current (A) 30 25 20 15 10 12 TJ = - 55 °C 8 VGS = 3 V 4 TJ = 25 °C 5 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0.025 1000 0.020 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VDS - Drain-to-Source Voltage (V) 0.015 VGS = 4.5 V 0.010 Ciss 600 400 200 0.005 Coss VGS = 10 V Crss 0.000 0 0 10 20 30 0 40 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 10 100 VDS = 15 V 8 TJ = 150 °C IS - Source Current (A) VGS - Gate-to-Source Voltage (V) ID = 15 A 6 4 TJ = 25 °C 10 1 2 0 0.1 0 3 6 9 12 15 0 Qg - Total Gate Charge (nC) 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note • Dots and squares represent measured data. S13-2299-Rev. A, 04-Nov-13 4 Document Number: 63845 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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