SiZ300DT Datasheet

New Product
SiZ300DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
30
Channel-2
30
a
RDS(on) ()
ID (A)
0.0240 at VGS = 10 V
11
0.0320 at VGS = 4.5 V
11
0.0110 at VGS = 10 V
28
0.0165 at VGS = 4.5 V
28
Qg (Typ.)
• PowerPAIR Optimizes High-Side and Low-Side
MOSFETs for Synchronous Buck Converters
• TrenchFET® Power Mosfets
3.5 nC
• 100 % Rg and UIS Tested
• Material categorization: For definitions of
6.8 nC
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Computing System Power
• POL
• Synchronous Buck Converter
PowerPAIR® 3 x 3
Pin 1
G1
D1
1
3
m
m
D1
D1
2
D1
D1
8
G2
3
4
S1/D2
G1
(Pin 9)
7
S2
N-Channel 1
MOSFET
6
S2
5
S2
3
S1/D2
mm
G2
N-Channel 2
MOSFET
Ordering Information:
SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
IDM
Pulsed Drain Current (t = 300 µs)
TA = 25 °C
TA = 25 °C
Continuous Source Drain Diode Current
Avalanche Current
L = 0.1 mH
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IS
IAS
EAS
PD
TJ, Tstg
Channel-1
Channel-2
30
± 20
11a
11a
9.8b, c
7.8b, c
30
V
28a
28a
14.9b, c
11.9b, c
40
26
11a
3.2b, c
12
Unit
A
3.8b, c
15
7
11
16.7
10.7
31
20
3.7b, c
2.4b, c
4.2b, c
2.7b, c
mJ
W
- 55 to 150
°C
260
Soldering Recommendations (Peak Temperature)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
d, e
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
RthJA
RthJC
Typ.
t  10 s
27
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Steady State
6
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
Channel-2
Max.
Typ.
Max.
Unit
34
7.5
24
3.2
30
4
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0, ID = 250 µA
Ch-1
30
VGS = 0 V, ID = 250 µA
Ch-2
30
V
ID = 250 µA
Ch-1
ID = 250 µA
Ch-2
30
ID = 250 µA
Ch-1
- 4.1
24
mV/°C
ID = 250 µA
Ch-2
VDS = VGS, ID = 250 µA
Ch-1
1
2.4
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
VDS = 0 V, VGS = ± 20 V
-5
Ch-1
± 100
Ch-2
± 100
VDS = 30 V, VGS = 0 V
Ch-1
1
VDS = 30 V, VGS = 0 V
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-2
VDS 5 V, VGS = 10 V
Ch-1
10
VDS 5 V, VGS = 10 V
Ch-2
10
V
nA
µA
5
A
VGS = 10 V, ID = 9.8 A
Ch-1
0.0200 0.0240
VGS = 10 V, ID = 15 A
Ch-2
0.0090 0.0110
VGS = 4.5 V, ID = 8.5 A
Ch-1
0.0265 0.0320
0.0135 0.0165
VGS = 4.5 V, ID = 12 A
Ch-2
VDS = 15 V, ID = 9.8 A
Ch-1
30
VDS = 15 V, ID = 15 A
Ch-2
30
Ch-1
400
Ch-2
730
Ch-1
125
Ch-2
155
Ch-1
25

S
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Ciss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Coss
Crss
Qg
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Ch-2
65
VDS = 15 V, VGS = 10 V, ID = 9.8 A
Ch-1
7.4
VDS = 15 V, VGS = 10 V, ID = 15 A
Ch-2
14.2
22
Ch-1
3.5
5.3
11
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 9.8 A
Ch-2
6.8
Ch-1
1.5
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 15 A
Ch-2
2.2
Ch-1
1.1
Qgs
Qgd
Rg
pF
Ch-2
f = 1 MHz
12
nC
2.3
Ch-1
0.5
2.6
5.2
Ch-2
0.5
2.6
5.2

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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For technical questions, contact: [email protected]
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
25
50
Ch-2
25
50
Ch-1
45
90
Ch-2
80
160
Ch-1
10
20
Ch-2
20
40
Ch-1
10
20
Ch-2
40
80
Ch-1
5
10
Ch-2
5
10
Ch-1
10
20
Ch-2
20
40
Ch-1
10
20
Ch-2
15
30
Ch-1
7
15
Ch-2
10
20
Unit
Dynamica
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
Fall Time
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
Channel-1
VDD = 15 V, RL = 1.9 
ID  8 A, VGEN = 10 V, Rg = 1 
tf
Channel-2
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
IS
TC = 25 °C
td(off)
Turn-Off Delay Time
Channel-1
VDD = 15 V, RL = 1.9 
ID  8 A, VGEN = 4.5 V, Rg = 1 
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
ISM
VSD
Body Diode Voltage
Ch-1
11
Ch-2
26
Ch-1
30
Ch-2
40
IS = 8 A, VGS = 0 V
Ch-1
0.84
1.2
IS = 10 A, VGS = 0 V
Ch-2
0.82
1.2
Ch-1
17
35
Ch-2
20
40
Ch-1
9
20
Ch-2
14
30
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Channel-1
IF = 8 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
A
Ch-1
9.5
Ch-2
12.5
Ch-1
7.5
Ch-2
7.5
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
30
25
16
ID - Drain Current (A)
ID - Drain Current (A)
VGS = 10 V thru 4 V
20
15
10
12
8
TC = 125 °C
4
VGS = 3 V
5
TC = 25 °C
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
1.0
Output Characteristics
2.0
2.5
3.0
3.5
4.0
Transfer Characteristics
600
0.05
500
C - Capacitance (pF)
0.04
RDS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
VGS = 4.5 V
0.03
0.02
VGS = 10 V
Ciss
400
300
200
Coss
0.01
100
Crss
0
0
0
5
10
15
20
ID - Drain Current (A)
25
30
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
VDS = 15 V
ID = 11 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
30
6
VDS = 7.5 V
VDS = 24 V
4
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
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4
8
VGS = 10 V
ID = 9.8 A
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.06
0.05
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
ID = 9.8 A
0.04
TJ = 125 °C
0.03
0.02
TJ = 25 °C
0.01
0.1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.4
50
2.2
40
2.0
30
1.8
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
10
ID = 250 μA
20
10
1.6
1.4
0
- 50
- 25
0
25
50
75
100
125
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
100
10
100
1000
Single Pulse Power
Limited by RDS(on)*
10
ID - Drain Current (A)
1
Time (s)
100 μs
1 ms
1
10 ms
0.1
100 ms
1s
10 s
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
25
20
20
16
15
12
Power (W)
ID - Drain Current (A)
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Package Limited
10
8
4
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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For technical questions, contact: [email protected]
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
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7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
40
35
VGS = 10 V thru 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
30
25
20
VGS = 3 V
15
12
TC = 25 °C
8
10
TC = 125 °C
4
5
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
0
3.0
1
0.025
1000
0.020
800
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
3
4
Transfer Characteristics
Output Characteristics
VGS = 4.5 V
0.015
2
VGS - Gate-to-Source Voltage (V)
0.010
VGS = 10 V
Ciss
600
400
Coss
200
0.005
Crss
0
0
0
10
20
30
0
40
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
30
1.8
10
VDS = 15 V
ID = 11 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
5
ID - Drain Current (A)
6
VDS = 7.5 V
VDS = 24 V
4
2
VGS = 10 V
ID = 15 A
1.6
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
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8
15
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.05
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15 A
0.04
TJ = 150 °C
10
TJ = 25 °C
1
0.03
TJ = 125 °C
0.02
0.01
TJ = 25 °C
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.0
50
1.8
40
1.6
30
1.4
Power (W)
VGS(th) (V)
Source-Drain Diode Forward Voltage
10
ID = 250 μA
20
10
1.2
0
1.0
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
0.001
0.01
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
10
ID - Drain Current (A)
0.1
100 μs
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
40
40
Package Limited
30
Power (W)
ID - Drain Current (A)
30
20
20
10
10
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
For technical questions, contact: [email protected]
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 64 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
Single Pulse
0.02
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67715.
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact: [email protected]
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11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAIR® 3 x 3 Case Outline
D
8
7
6
A
A1
5
K2
D2
5
6
K2
7
8
E1
K
L
d 0.10 C
2X
*
1
2
3
d 0.10 C
2X
0.10
4
0.15
4
3
2
1
e
b
b1
0.10 C
A
f
E2
K1
E
9
Note
* Indicates pin #1 orientation (optional)
c
C
d
0.08 C
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.05
0.000
b
0.35
0.40
0.45
0.014
0.016
0.018
b1
0.20
0.25
0.38
0.008
0.010
0.015
C
0.18
0.20
0.23
0.007
0.008
0.009
D
2.90
3.00
3.10
0.114
0.118
0.122
D2
2.35
2.40
2.45
0.093
0.094
0.096
E
2.90
3.00
3.10
0.114
0.118
0.122
E1
0.94
0.99
1.04
0.037
0.039
0.041
E2
0.47
0.52
0.57
0.019
0.020
0.022
e
0.002
0.65 BSC
0.026 BSC
K
0.25 typ.
0.010 typ.
K1
0.35 typ.
0.014 typ.
K2
0.30 typ.
L
0.27
0.32
0.012 typ.
0.37
0.011
0.013
0.015
ECN: T12-0347-Rev. C, 18-Jun-12
DWG: 5998
Revison: 18-Jun-12
1
Document Number: 67698
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3
0.450
0.650
(0.018)
(0.026)
0.450
(0.018)
1.036
2.450
(0.096)
0.084
(0.003)
(0.041)
0.209
(0.008)
0.306
(0.012)
0.562
(0.022)
(0.063)
1.611
0.390
(0.015)
1.200
(0.047)
Recommended PAD for PowerPAIR 3 x 3
Dimensions in millimeters (inches)
Keep-Out 3.5 mm x 3.5 mm for non terminating traces
Document Number: 63294
Revision: 25-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000