Silicon Schottky Diodes BAS 125 … ● For low-loss, fast-recovery, meter protection, bias isolation and clamping applications ● Integrated diffused guard ring ● Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration (tape and reel) Package1) BAS 125 13 Q62702-D1316 SOT-23 BAS 125-04 14 Q62702-D1321 BAS 125-05 15 Q62702-D1322 BAS 125-06 16 Q62702-D1323 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 02.96 BAS 125 … ● For low-loss, fast-recovery, meter protection, bias isolation and clamping applications ● Integrated diffused guard ring ● Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration (tape and reel) Package1) BAS 125-07 17 Q62702-D1327 SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 25 V Forward current IF 100 mA Surge forward current, t ≤ 10 ms IFSM 500 Total power dissipation, TS ≤ 25 ˚C 3) Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Junction - ambient2) Rth JA ≤ 725 Junction - soldering point Rth JS ≤ 565 Thermal Resistance 1) 2) 3) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. 450 mW per package. Semiconductor Group 2 K/W BAS 125 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 1 10 – – – 385 530 800 410 – 900 µA Reverse current VR = 20 V VR = 25 V IR Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA VF Diode capacitance VR = 0, f = 1 MHz CT – – 1.1 pF Differential forward resistance IF = 5 mA, f = 10 kHz RF – 15 – Ω Semiconductor Group 3 mV BAS 125 … Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina BAS 125-04, -05, -06, -07 Forward current IF = f (TS; TA*) *Package mounted on alumina BAS 125 Reverse current IR = f (VR) Semiconductor Group 4 BAS 125 … Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group Differential forward resistance RF = f (IF) f = 10 kHz 5