INFINEON BAS125-05

Silicon Schottky Diodes
BAS 125 …
●
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
●
Integrated diffused guard ring
●
Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
Package1)
BAS 125
13
Q62702-D1316
SOT-23
BAS 125-04
14
Q62702-D1321
BAS 125-05
15
Q62702-D1322
BAS 125-06
16
Q62702-D1323
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
02.96
BAS 125 …
●
For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
●
Integrated diffused guard ring
●
Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
Package1)
BAS 125-07
17
Q62702-D1327
SOT-143
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Reverse voltage
VR
25
V
Forward current
IF
100
mA
Surge forward current, t ≤ 10 ms
IFSM
500
Total power dissipation, TS ≤ 25 ˚C 3)
Ptot
250
mW
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 55 … + 150
Junction - ambient2)
Rth JA
≤
725
Junction - soldering point
Rth JS
≤
565
Thermal Resistance
1)
2)
3)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
450 mW per package.
Semiconductor Group
2
K/W
BAS 125 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
–
–
1
10
–
–
–
385
530
800
410
–
900
µA
Reverse current
VR = 20 V
VR = 25 V
IR
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
VF
Diode capacitance
VR = 0, f = 1 MHz
CT
–
–
1.1
pF
Differential forward resistance
IF = 5 mA, f = 10 kHz
RF
–
15
–
Ω
Semiconductor Group
3
mV
BAS 125 …
Forward current IF = f (VF)
Forward current IF = f (TS; TA*)
*Package mounted on alumina
BAS 125-04, -05, -06, -07
Forward current IF = f (TS; TA*)
*Package mounted on alumina
BAS 125
Reverse current IR = f (VR)
Semiconductor Group
4
BAS 125 …
Diode capacitance CT = f (VR)
f = 1 MHz
Semiconductor Group
Differential forward resistance RF = f (IF)
f = 10 kHz
5