Silicon Schottky Diodes BAS 70 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration (tape and reel) Package1) BAS 70 73s Q62702-A118 SOT-23 BAS 70-04 74s Q62702-A730 BAS 70-05 75s Q62702-A711 BAS 70-06 76s Q62702-A774 Type 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 01.97 BAS 70 … General-purpose diodes for high-speed switching ● Circuit protection ● Voltage clamping ● High-level detecting and mixing Available with CECC quality assessment ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 70-07 Marking Ordering Code Pin Configuration (tape and reel) Package1) 77s Q62702-A846 SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 70 mA Surge forward current, t ≤ 10 ms IFSM 100 Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Ptot 250 mW Junction temperature Tj 150 ˚C Operating temperature range Top – 55 … + 150 Storage temperature range Tstg – 55 … + 150 Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Rth JA Junction - soldering point BAS 70 BAS 70-04 … Rth JS 1) 2) 3) For detailed information see chapter Package Outlines. Max. 450 mW per package. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W ≤ ≤ 405 575 ≤ ≤ 335 435 BAS 70 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 70 – – – – – – 0.1 10 – – – 375 705 880 410 750 1000 DC characteristics Breakdown voltage IR = 10 µA V(BR) Reverse current VR = 50 V VR = 70 V IR Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF Diode capacitance VR = 0, f = 1 MHz CT – 1.6 2 pF Charge carrier life time IF = 25 mA τ – – 100 ps Differential forward resistance IF = 10 mA, f = 10 kHz rf – 30 – Ω Semiconductor Group 3 V µA mV BAS 70 … Characteristics per Diode at Tj = 25 ˚C, unless otherwise specified. Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f= 1 MHz Semiconductor Group Differential forward resistance rf = f (IF) f= 10 kHz 4 BAS 70 … Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 5