Diodes SMD Type Silicon Schottky Diodes BAT64W;BAT64-04W BAT64-05W;BAT64-06W Features For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r D io d e re v e rs e v o lta g e F o rw a rd c u rre n t A v e ra g e fo rw a rd c u rre n t (5 0 /6 0 H z , s in u s ) S ym bol V a lu e U n it VR 40 V IF 250 mA IF A V 120 mA IF S M 800 mA T o ta l p o w e r d is s ip a tio n BAT 64W , TS 120 P to t 250 mW T o ta l p o w e r d is s ip a tio n B A T 6 4 -0 4 /0 6 W , T S 111 P to t 250 mW 104 P to t 250 mW Tj 150 T s tg -5 0 to + 1 5 0 100m s) S u rg e fo rw a rd c u rre n t (t T o ta l p o w e r d is s ip a tio n B A R 6 4 -0 5 W , TS J u n c tio n te m p e ra tu re S to ra g e te m p e ra tu re J u n c tio n - a m b ie n t (N o te 1 ) BAT 64W R th J A 255 J u n c tio n - a m b ie n t (N o te 1 ) B A T 6 4 -0 4 /0 6 W R th J A 290 J u n c tio n - a m b ie n t (N o te 1 ) B A T 6 4 -0 5 W R th J A 455 J u n c tio n - s o ld e rin g p o in t BAT 64W R th J S 120 J u n c tio n - s o ld e rin g p o in t B A T 6 4 -0 4 /0 6 W R th J S 155 J u n c tio n - s o ld e rin g p o in t B A T 6 4 -0 5 W R th J S 185 K /W K /W N o te 1 .P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m 40m m 1 .5 m m / 6 c m 2 C u www.kexin.com.cn 1 Diodes SMD Type BAT64W;BAT64-04W BAT64-05W;BAT64-06W E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r R e v e rs e c u rre n t S ym bol C o n d itio n s M in T yp VR = 30 V IR 2 200 VR = 30 V, TA = 85 F o rw a rd v o lta g e CT IF = 1 m A 320 350 IF = 1 0 m A 380 430 IF = 3 0 m A 440 520 IF = 1 0 0 m A 570 750 VR = 1 V, f = 1 MHz 4 6 VF D io d e c a p a c ita n c e Marking 2 Type BAT64W BAT64-04W BAT64-05W BAT64-06W Marking 63s 64s 65s 66s www.kexin.com.cn M ax U n it A mV pF