SPB18P06P G SIPMOS® Power-Transistor Product Summary Features V DS • P-Channel • Enhancement mode -60 V R DS(on),max 0.13 Ω ID -18.6 A • Avalanche rated • dv /dt rated PG-TO263-3 • 175°C operating temperature • Pb-free lead plating; RoHS compliant Type Package SPB18P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Marking 18P06P Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Value Symbol Conditions Unit steady state Continuous drain current ID T A=25 °C -18.7 T A=100 °C -13.2 Pulsed drain current I D,pulse T A=25 °C -74.8 Avalanche energy, single pulse E AS I D=18.7 A, R GS=25 Ω 151 Avalanche energy, periodic limited by E AR Tjmax Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg A mJ 8 I D=18.7 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C T A=25 °C -6 kV/µs ±20 V 81.1 W "-55 ... +175" °C ESD class 260 °C Soldering temperature 55/175/56 IEC climatic category; DIN IEC 68-1 Rev 1.4 page 1 2008-07-09 SPB18P06P G Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.85 Thermal resistance, junction - ambient,leaded R thJA - - 62 SMD verson, device on PCB: R thJA minimal footprint - - 62 6 cm2 cooling area1) - - 40 -60 - - -2.1 3 -4 K/W K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA Gate threshold voltage V GS(th) V DS=V GS, I D=1000 µA Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-13.2 A - 101 130 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-13.2 A 5 10 - S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. FCB is vertical without blown air. Rev 1.4 page 2 2008-07-09 SPB18P06P G Parameter Values Symbol Conditions Unit min. typ. max. - 690 860 - 230 290 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 95 120 Turn-on delay time t d(on) - 12 18 Rise time tr - 5.8 8.7 Turn-off delay time t d(off) - 25 37 Fall time tf - 11 16.5 Gate to source charge Q gs - -4.1 -5.5 Gate to drain charge Q gd - -11 -17 Gate charge total Qg - -21 -28 Gate plateau voltage V plateau - -5.94 - V - - -18.6 A - - -74.8 - -0.99 -1.33 V - 70 105 ns - 139 208 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=10 V, I D=-13.2 A, R G=2.7 Ω pF ns 37 Gate Charge Characteristics V DD=-48 V, I D=18.6 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Rev 1.4 Q rr T A=25 °C V GS=0 V, I F=18.6 A, T j=25 °C V R=30 V, I F=|I S|, di F/dt =100 A/µs page 3 2008-07-09 SPB18P06P G 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 18 75 16 14 60 -I D [A] P tot [W] 12 45 10 8 30 6 4 15 2 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 101 10 µs 100 µs limited by on-state resistance 1 ms 101 10 ms 100 0.5 10 Z thJS [K/W] -I D [A] DC 0 0.2 0.1 0.05 0.02 10-1 10 10-5 -1 0.01 single-4pulse 10 10-3 10-2 10-1 100 101 102 10-2 10-1 100 101 102 -V DS [V] Rev 1.4 t p [s] page 4 2008-07-09 SPB18P06P G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 25 500 -10 V -20V 450 -7V 20 400 -6 V 350 R DS(on) [mΩ] -I D [A] 15 -5.5 V 10 -4 V 300 -4.5 V -5 V 250 -5.5 V 200 -6 V -5 V 150 5 -7 V -10 V 100 -4.5 V -20 V 50 -4 V 0 0 0 1 2 3 4 5 0 5 10 -V DS [V] 15 20 25 30 35 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 14 14 12 12 10 10 8 g fs [S] -I D [A] parameter: T j 8 6 6 4 4 125 °C 2 2 25 °C 0 0 0 1 2 3 4 5 6 Rev 1.4 0 5 10 15 20 -I D [A] -V GS [V] page 5 2008-07-09 SPB18P06P G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-1000 µA 300 5 4.5 250 4 3.5 -V GS(th) [V] 200 R DS(on) [mΩ] max. 98 % 150 typ. 3 2.5 2 typ. 100 min. 1.5 1 50 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 175 °C, typ 25 °C, 98% 101 103 I F [A] C [pF] Ciss Coss 175 °C, 98% 100 Crss 10 2 25 °C, typ 10-1 101 10-2 0 5 10 15 20 25 -V DS [V] Rev 1.4 0 0.5 1 1.5 2 2.5 3 -V SD [V] page 6 2008-07-09 SPB18P06P G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-18.6 A pulsed parameter: T j(start) parameter: V DD 16 102 14 12 12 V 30 V V GS [V] -I AV [A] 10 25 °C 101 100 °C 125 °C 48 V 8 6 4 2 100 0 100 101 102 103 t AV [µs] 0 10 20 30 40 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 70 -V BR(DSS) [V] 65 60 55 50 -60 -20 20 60 100 140 180 T j [°C] Rev 1.4 page 7 2008-07-09 SPB18P06P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.4 page 8 2008-07-09