BSS159N SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 60 V R DS(on),max 8 Ω 0.13 A I DSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant SOT-23 Type Package Pb-free Tape and Reel Information Marking BSS159 PG-SOT-23 Yes L6327: 3000 pcs/reel SGs BSS159 PG-SOT-23 Yes L6906: 3000 pcs/reel sorted in V GS(th) bands1) SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.23 T A=70 °C 0.18 I D,pulse T A=25 °C 0.92 Reverse diode dv /dt dv /dt I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ±20 ESD sensitivity (HBM) as per MIL-STD 883 A kV/µs V Class 0 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 Unit 0.36 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 1.32 page 1 2006-12-11 BSS159N Parameter Values Symbol Conditions Unit min. typ. max. - - 350 60 - - -3.5 -2.8 -2.4 Thermal characteristics Thermal characteristics R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA Gate threshold voltage V GS(th) V DS=3 V, I D=26 µA Drain-source cutoff current I D(off) V DS=60 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=60 V, V GS=-10 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 130 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.07 A - 3.9 8 Ω V GS=10 V, I D=0.16 A - 1.7 3.5 |V DS|>2|I D|R DS(on)max, I D=0.16 A 0.1 0.19 - S V DS=3 V, I D=26 µA -2.6 - -2.4 V K -2.75 - -2.55 L -2.9 - -2.7 M -3.05 - -2.85 N -3.2 - -3 Transconductance g fs Threshold voltage V GS(th) sorted in bands2) V GS(th) J 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2006-12-11 BSS159N Parameter Values Symbol Conditions Unit min. typ. max. - 33 44 - 8.3 11 Dynamic characteristics Input capacitance C iss Dynamic characteristics C oss Reverse transfer capacitance Crss - 3.9 5.9 Turn-on delay time t d(on) - 3.1 4.7 Rise time tr - 2.9 4.4 Turn-off delay time t d(off) - 9 13 Fall time tf - 9 13 Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 0.7 1.1 Gate charge total Qg - 2.2 2.9 Gate plateau voltage V plateau - -0.14 - V - - 0.20 A - - 0.81 - 0.79 1.2 V - 10.4 13 ns - 3.3 4.1 nC V GS=-10 V, V DS=25 V, f =1 MHz V DD=25 V, V GS=-3…7 V, I D=0.16 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=40 V, I D=0.16 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.32 T A=25 °C V GS=-3 V, I F=0.16 A, T j=25 °C V R=30 V, I F=0.16 A, di F/dt =100 A/µs page 3 2006-12-11 BSS159N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.4 0.24 0.2 0.3 I D [A] P tot [W] 0.16 0.12 0.2 0.08 0.1 0.04 0 0 0 40 80 120 160 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: D =t p/T 101 103 limited by on-state resistance 0.5 100 102 Z thJA [K/W] I D [A] 100 µs 1 ms 10-1 10 ms 0.2 0.1 0.05 0.02 0.01 100 ms 10 10 -2 DC 10-3 100 10 0 10 1 10 2 V DS [V] Rev. 1.32 single pulse 1 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2006-12-11 BSS159N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.6 -0.2 V 10 0V -0.1 V 0.5 10 V 1V 0.2 V 0.5 V 0.1 V 8 0.5 V 0.4 0.2 V R DS(on) [Ω] I D [A] 0.1 V 0V 0.3 -0.1 V -0.2 V 6 4 1V 0.2 2 0.1 0 10 V 0 0 2 4 6 8 10 0 0.1 0.2 V DS [V] 0.3 0.4 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.3 0.5 0.25 0.4 0.2 g fs [S] I D [A] 7 Typ. transfer characteristics 0.3 0.6 0.15 0.2 0.1 0.1 0.05 0 0 -4 -3 -2 -1 0 1 V GS [V] Rev. 1.32 0.5 I D [A] 0.00 0.10 0.20 0.30 I D [A] page 5 2006-12-11 BSS159N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.07 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=26 µA parameter: I D 20 -2 16 -2.4 98 % V GS(th) [V] R DS(on) [Ω] typ 12 98 % 8 -2.8 -3.2 2% typ 4 -3.6 0 -4 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-10 V; f =1 MHz 102 1 Ciss I D [mA] 0.1 M N L K 101 J Coss C [pF] 26 µA 0.01 Crss 100 0.001 -3.5 -3 -2.5 -2 V GS [V] Rev. 1.32 0 10 20 30 40 V DS [V] page 6 2006-12-11 BSS159N 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.16 A pulsed parameter: T j parameter: V DD 1 6 0.2 VDS(max) 5 0.5 VDS(max) 150 °C, 98% 4 25 °C 0.8 VDS(max) 150 °C 3 0.1 25 °C, 98% I F [A] V GS [V] 2 1 0 0.01 -1 -2 -3 -4 0.001 0 0.4 0.8 0 1.2 V SD [V] 1 2 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA V BR(DSS) [V] 70 50 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.32 page 7 2006-12-11 BSS159N Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.32 page 8 2006-12-11 BSS159N Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2006-12-11