BSS138W SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS(on),max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323 Q67042-S4187 E6327: 3000 pcs/reel SWs BSS138W SOT-323 Q67042-S4191 E6433: 10000 pcs/reel SWs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.28 T A=70 °C 0.22 1.12 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.28 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.1 Value 0.50 W -55 ... 150 °C 55/150/56 page 1 2004-04-16 BSS138W Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA 60 - - Gate threshold voltage V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4 Drain-source leakage current I D (off) V DS=60 V, V GS=0 V, T j=25 °C - - 0.1 V DS=60 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.03 A - 3 4.0 Ω V GS=4.5 V, I D=0.16 A - 3.2 6 V GS=10 V, I D=0.2 A - 2.1 3.5 |V DS|>2|I D|R DS(on)max, I D=0.22 A 0.12 0.23 - Transconductance Rev. 1.1 g fs page 2 S 2004-04-16 BSS138W Parameter Values Symbol Conditions Unit min. typ. max. - 32 43 - 7.2 10 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.8 4.2 Turn-on delay time t d(on) - 2.2 3.3 Rise time tr - 3.0 4.5 Turn-off delay time t d(off) - 6.7 10 Fall time tf - 8.2 12 Gate to source charge Q gs - 0.10 0.13 Gate to drain charge Q gd - 0.3 0.4 Gate charge total Qg - 1.0 1.5 Gate plateau voltage V plateau - 3.2 - V - - 0.28 A - - 1.12 - 0.85 1.2 V - 8.3 12.4 ns - 3.3 5 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.2 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=48 V, I D=0.2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.1 T A=25 °C V GS=0 V, I F=0.28 A, T j=25 °C V R=30 V, I F=0.28 A, di F/dt =100 A/µs page 3 2004-04-16 BSS138W 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.3 0.5 0.25 0.4 0.3 I D [A] P tot [W] 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operation area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 0.5 102 10 µs 0 0.2 10 100 µs 0.1 0.05 Z thJA [K/W] I D [A] 1 ms 10 ms -1 10 100 ms 101 0.02 0.01 100 single pulse DC -2 10 10-1 10-2 10-3 1 10 100 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] V DS [V] Rev. 1.1 10-6 page 4 2004-04-16 BSS138W 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.6 10 10 V 7V 5V 2.9 V 4.5 V 0.5 3.2 V 3.5 V 4V 8 4V R DS(on) [Ω] I D [A] 0.4 3.5 V 0.3 3.2 V 6 4.5 V 4 5V 0.2 2.9 V 7V 10 V 2 0.1 0 0 0 1 2 3 4 5 0 0.1 V DS [V] 0.2 0.3 0.4 0.5 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.6 0.4 0.35 0.5 0.3 0.4 g fs [S] I D [A] 0.25 0.3 0.2 0.15 0.2 0.1 0.1 0.05 0 0 0 1 2 3 4 5 0.10 0.20 0.30 0.40 I D [A] V GS [V] Rev. 1.1 0.00 page 5 2004-04-16 BSS138W 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8 2 1.6 6 V GS(th) [V] R DS(on) [Ω] 98 % 98 % 4 1.2 typ 0.8 typ 2 2% 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 100 150 °C, 98% 25 °C 25 °C, 98% 150 °C Ciss I F [A] C [pF] 10-1 101 Coss 10-2 Crss 100 10-3 0 10 20 30 0.4 0.8 1.2 1.6 2 V SD [V] V DS [V] Rev. 1.1 0 page 6 2004-04-16 BSS138W 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.2 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 70 12 30 V 10 65 V BR(DSS) [V] V GS [V] 8 48 V 12 V 6 60 4 55 2 50 0 0 0.2 0.4 0.6 0.8 1 Q gate [nC] Rev. 1.1 -60 -20 20 60 100 140 180 T j [°C] page 7 2004-04-16 BSS138W Package Outline: Footprint: Rev. 1.1 Packaging: page 8 2004-04-16 BSS138W Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2004-04-16